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IMX25T110

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IMX25T110

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Part Number IMX25T110
Manufacturer Rohm Semiconductor
Description TRANS 2NPN 20V 0.3A 6SMT
Datasheet IMX25T110 Datasheet
Package SC-74, SOT-457
In Stock 54,000 piece(s)
Unit Price $ 0.1134 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 3 - Jun 8 (Choose Expedited Shipping)
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Part Number # IMX25T110 (Transistors - Bipolar (BJT) - Arrays) is manufactured by Rohm Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IMX25T110 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IMX25T110 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IMX25T110.

IMX25T110 Specifications

ManufacturerRohm Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
Datasheet IMX25T110Datasheet
PackageSC-74, SOT-457
Series-
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 4ma, 2V
Power - Max300mW
Frequency - Transition35MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSMT6

IMX25T110 Datasheet

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1/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B General purpose transistor (isolated dual transistors) IMX25 Features Dimensions (Unit : mm) 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. Absolute maximum ratings (Ta=25C) Inner circuit Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 50 20 25 − − 820 − − − − − − − 50 − − − 0.1 0.1 2700 100 V IC=10μA IC=1mA IE=10μA VCB=50V VEB=25V VCE=2V, IC=4mA IC/IB=30mA/3mA V V μA μA − mV Typ. Max. Unit Conditions fT Ron Cob − − − 35 0.7 3.9 − − − VCE=6V, IE=−4mA, f=10MHz IB=5mA, Vi=100mVrms, f=1kHz VCB=10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage Packaging specifications IMX25 Part No. T110 3000 Packaging type Code Basic ordering unit (pieces) Taping ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 (1)(2)(3) 0.3 +0.1 −0.05 1 .6 2 .8 ± 0 .2 +0 .2 −0 .1 (6)(5)(4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0 .3 t o 0 .60.15 −0.06 +0.1 All terminals have same dimensions Parameter Symbol Limits Unit VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1)

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2/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B Data Sheet IMX25 Electrical characteristic curves 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0.1 10 100 1000 C O L L E C T O R C U R R E N T : I C ( m A ) BASE TO EMITTER VOLTAGE : VBE(ON) (V) Fig.1 Grounded emitter propagation characteristics ( Ι ) VCE=2V 25°C −40°C Ta=125°C C O L L E C T O R C U R R E N T : I C ( m A ) Fig.2 Grounded emitter propagation characteristics ( ΙΙ ) 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0.1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) VCE=6V 25°C −40°C Ta=125°C 1 10 100 1000 10 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C D C C U R R E N T G A IN : h F E COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( ) VCE=2V D C C U R R E N T G A IN : h F E COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 1 10 100 1000 10 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C VCE=6V 1 10 100 1000 1 100 10 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) IC/IB=10/1 C O L L E C T O R S A T U R A T IO N V O L T A G E : V C E (s a t) (m V ) 1 10 100 1000 1 100 10 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=20/1 C O L L E C T O R S A T U R A T IO N V O L T A G E : V C E (s a t) (m V ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 1 100 10 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=50/1 C O L L E C T O R S A T U R A T IO N V O L T A G E : V C E (s a t) (m V ) Fig.7 Collector-emitter saturation voltage vs. collector current ( )  Fig.8 Base-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=10/1 B A S E S A T U R A T IO N V O L T A G E : V B E (s a t) ( m V )  Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) B A S E S A T U R A T IO N V O L T A G E : V B E (s a t) ( m V ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=20/1    

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3/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B Data Sheet IMX25 Fig.10 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) B A S E S A T U R A T IO N V O L T A G E : V B E (s a t) ( m V ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=50/1  Fig.11 Gain bandwidth product vs. emitter current 1 10 100 1 10000 Ta=25°C f=50MHz IE=0A EMITTER CURRENT : IE (mA) T R A N S IT IO N F R E Q U E N C Y : f T ( M H z )  Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage C O L L E C T O R O U T P U T C A P A C IT A N C E : C o b ( p F ) E M IT T E R IN P U T C A P A C IT A N C E : C ib ( p F ) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) 1 10 100 0.1 1 10 100 Ta=25°C f=1MHz IE=0A     0.01 0.1 1 10010 0.1 1 100 10 Ta= 25°C See Fig.15 O N R E S IS T A N C E : R o n ( Ω ) Fig.13 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA)  0.01 0.1 1 10010 0.1 1 100 10 Ta=25°C See Fig.16 O N R E S IS T A N C E : R o n ( Ω ) Fig.14 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA)     Ron measurement circuit Ron= ×RL v0 v0 vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.15 Ron measurement circuit ( ) Ron= ×RL v0 v0 vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.16 Ron measurement circuit ( ) This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

IMX25T110 Reviews

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May 26, 2020

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May 21, 2020

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May 19, 2020

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May 18, 2020

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May 11, 2020

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May 7, 2020

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May 5, 2020

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May 4, 2020

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April 14, 2020

Competitively priced set of diodes, tested as described. Quality is about what you would expect for no- or off-brand.

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