Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

For Reference Only

Part Number IPB65R310CFDAATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH TO263-3
Datasheet IPB65R310CFDAATMA1 Datasheet
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 152 piece(s)
Unit Price $ 1.4784 *
Lead Time To be Confirmed
Estimated Delivery Time Jul 11 - Jul 16 (Choose Expedited Shipping)
Request for Quotation

Part Number # IPB65R310CFDAATMA1 (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IPB65R310CFDAATMA1 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IPB65R310CFDAATMA1 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IPB65R310CFDAATMA1.

IPB65R310CFDAATMA1 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IPB65R310CFDAATMA1Datasheet
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesAutomotive, AEC-Q101, CoolMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1110pF @ 100V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)104.2W (Tc)
Rds On (Max) @ Id, Vgs310 mOhm @ 4.4A, 10V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB65R310CFDAATMA1 Datasheet

Page 1

Page 2

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPx65R310CFDA Data Sheet Rev. 2.0 Final Automotive

Page 3

2 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet D²PAK TO-220 drain pin 2 gate pin 1 source pin 3 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Easy to use/drive • Qualified according to AEC Q101 • Green package (RoHS compliant), Pb-free plating, halogen free for mold compound Applications 650V CoolMOS™ CFDA is designed for switching applications. Table 1 Key Performance Parameters Parameter Value Unit V‡» 650 V RDS(on),max 0.31  Qg,typ 41 nC ID,pulse 34.4 A Eoss @ 400V 3.5 µJ Body diode di/dt 900 A/µs Qrr 0.35 µC trr 95 ns Irrm 6.5 A Type / Ordering Code Package Marking Related Links IPB65R310CFDA PG-TO 263 IPP65R310CFDA PG-TO 220 65F6310A -

Page 4

3 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Page 5

4 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet 2 Maximum ratings at TÎ = 25°C, unless otherwise specified Table 2 Maximum ratings Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Continuous drain current1) I ‡ 11.4 A T† = 25°C 7.2 T† = 100°C Pulsed drain current2) I ‡‚ÔÛÐÙþ 34.4 A T† = 25°C Avalanche energy, single pulse Eƒ» 290 mJ I ‡ = 2.3A, V‡‡ = 50V (see table 19) Avalanche energy, repetitive Eƒ¸ 0.43 mJ I ‡ = 2.3A, V‡‡ = 50V Avalanche current, repetitive I ƒ¸ 2.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns V‡» = 0 ... 400V Gate source voltage V•» -20 20 V static -30 30 AC (f > 1 Hz) Power dissipation (non FullPAK, SMD) TO-220, D²PAK PÚÓÚ 104.2 W T† = 25°C Operating and storage temperature T΂TÙÚà -40 150 °C Mounting torque (non FullPAK) TO-220 60 Ncm M3 and M3.5 screws Continuous diode forward current I » 11.4 A T† = 25°C Diode pulse current I »‚ÔÛÐÙþ 34.4 A T† = 25°C Reverse diode dv/dt3) dv/dt 50 V/ns V‡» = 0 ... 400V, I »‡ ù I ‡, TÎ = 25°C (see table 17) Maximum diode commutation speed diË/dt 900 A/µs 1) Limited by TÎ ÑÈà. 2) Pulse width tÔ limited by TÎ ÑÈà 3) Identical low side and high side switch with identical R•

Page 6

5 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet 3 Thermal characteristics Table 3 Thermal characteristics TO-220 Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Thermal resistance, junction - case RÚÌœ† 1.2 K/W Thermal resistance, junction - ambient RÚÌœƒ 62 K/W leaded Soldering temperature, wavesoldering only allowed at leads TÙÓÐÁ 260 °C 1.6 mm (0.063 in.) from case for 10s Table 4 Thermal characteristics D²PAK Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Thermal resistance, junction - case RÚÌœ† 1.2 K/W Thermal resistance, junction - ambient1) RÚÌœƒ 62 K/W SMD version, device on PCB, minimal footprint 35 SMD version, device on PCB, 6cm² cooling area Soldering temperature, wave- & reflowsoldering allowed TÙÓÐÁ 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.

Page 7

6 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet 4 Electrical characteristics at TÎ = 25°C, unless otherwise specified Table 5 Static characteristics Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Drain-source breakdown voltage1) Vñ…¸ò‡»» 650 V V•» = 0V, I ‡ = 1mA Gate threshold voltage V•»ñÚÌò 3.5 4 4.5 V V‡» = V•», I ‡ = 0.44mA Zero gate voltage drain current I ‡»» 1 µA V‡» = 650V, V•» = 0V, TÎ = 25°C 150 V‡» = 650V, V•» = 0V, TÎ = 150°C Gate-source leakage current I •»» 100 nA V•» = 20V, V‡» = 0V Drain-source on-state resistance R‡»ñÓÒò 0.28 0.31  V•» = 10V, I ‡ = 4.4A, TÎ = 25°C 0.725 V•» = 10V, I ‡ = 4.4A, TÎ = 150°C Gate resistance R• 4.5  f = 1MHz, open drain Table 6 Dynamic characteristics Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Input capacitance CÍÙÙ 1110 pF V•» = 0V, V‡» = 100V, f = 1MHz Output capacitance CÓÙÙ 55 pF Effective output capacitance, energy related2) CÓñþØò 44 pF V•» = 0V, V‡» = 0 ... 400V Effective output capacitance, time related3) CÓñÚØò 204 pF I ‡ = constant, V•» = 0V, V‡» = 0 ... 400V Turn-on delay time tÁñÓÒò 11 ns V‡‡ = 400V, V•» = 13V, I ‡ = 6.6A, R• = 3.4 (see table 18) Rise time tØ 7.5 ns Turn-off delay time tÁñÓËËò 45 ns Fall time tË 7 ns Table 7 Gate charge characteristics Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Gate to source charge QÃÙ 7 nC V‡‡ = 480V, I ‡ = 6.6A, V•» = 0 to 10V Gate to drain charge QÃÁ 22 nC Gate charge total Qà 41 nC Gate plateau voltage VÔÐÈÚþÈÛ 6.4 V 1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office. 2) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V 3) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V

Page 8

7 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet Table 8 Reverse diode characteristics Values Min. Typ. Max. Parameter Symbol Unit Note / Test Condition Diode forward voltage V»‡ 0.9 V V•» = 0V, I Œ = 6.6A, TÎ = 25°C Reverse recovery time tØØ 95 ns V¸ = 400V, I Œ = 6.6A, di Œ/dt = 100A/µs (see table 17) Reverse recovery charge QØØ 0.35 µC Peak reverse recovery current I ØØÑ 6.5 A

Page 9

8 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet 5 Electrical characteristics diagrams Table 9 Power dissipation TC [°C] PP PP to t to t to t to t [W ] [ W ] [ W ] [ W ] 0 40 80 120 160 0 10 20 30 40 50 60 70 80 90 100 110 Ptot=f(TC) Max. transient thermal impedance tp [s] ZZ ZZ th J C th J C th J C th J C [ K /W ] [ K /W ] [ K /W ] [ K /W ] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC =f(tP); parameter: D=tp/T Table 10 Typ. output characteristics VDS [V] I I I I DD DD [ A ] [ A ] [ A ] [ A ] 0 5 10 15 20 0 5 10 15 20 25 30 35 40 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V I D=f(VDS); Tj=25 °C; parameter: VGS Typ. output characteristics VDS [V] I I I I DD DD [ A ] [ A ] [ A ] [ A ] 0 5 10 15 20 0 5 10 15 20 25 30 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V I D=f(VDS); Tj=125 °C; parameter: VGS

Page 10

9 650V CoolMOS™ CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA Rev. 2.0, 2012-03-28Final Data Sheet Table 11 Typ. drain-source on-state resistance I D [A] RR RR D S (o n ) D S (o n ) D S (o n ) D S (o n ) [Â ] [ Â ] [ Â ] [ Â ] 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 2.0 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(I D); Tj=125 °C; parameter: VGS Typ. drain-source on-state resistance Tj [°C] RR RR D S (o n ) D S (o n ) D S (o n ) D S (o n ) [Â ] [Â ] [Â ] [Â ] -40 0 40 80 120 160 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 RDS(on)=f(Tj); I D=18.1 A; VGS=10 V Table 12 Typ. transfer characteristics VGS [V] I I I I DD DD [ A ] [ A ] [ A ] [ A ] 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 150 °C 25 °C I D=f(VGS); |VDS|>2|I D|RDS(on)max; parameter: Tj Safe operating area VDS [V] I I I I DD DD [ A ] [ A ] [ A ] [ A ] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC I D=f(VDS); TC=25 °C; D=0; parameter: tp

IPB65R310CFDAATMA1 Reviews

Average User Rating
5 / 5 (128)
★ ★ ★ ★ ★
5 ★
115
4 ★
13
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Val*****in Vu

June 28, 2020

Diodes okay. Shipped quick and received with well - packed

Kevi*****ntry

June 20, 2020

Received the parts, and all parts are in tight packaging without any problems, professional seller.

Adely*****varro

June 19, 2020

Excellent ease of using site both in finding products and ordering! Also shipping charges reasonable.

Cono*****anco

June 14, 2020

Awesome components selection and availability. Ordering process is easy. They don't spam me after the purchase.

Pipe*****etty

June 14, 2020

Great website. Well organized and easy to search products.

Rolan*****donado

June 11, 2020

I received technical certification with a good staff. They have good fair prices on brand names.

Kalan*****tterjee

June 7, 2020

Great item and excellent seller! Would highly recommend. Thank you. Trustworthy

Ahm*****Solis

June 1, 2020

Awesome!!! great prices, easy to order and great service, thank you!

Ale*****Potts

May 30, 2020

To be honest, you're beating your competitor on delivery - sometimes I request 2nd day and you still get it here overnight. Thanks!

Beat***** Shah

May 19, 2020

Pleased with this purchase, good, quick service and item exactly as shown.

IPB65R310CFDAATMA1 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

IPB65R310CFDAATMA1 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

IPB65R310CFDAATMA1 Related Products

2225Y0630473JCT 2225Y0630473JCT Knowles Syfer, CAP CER 2225, -, Automotive, AEC-Q101, CoolMOS? View
0603YC682MAT2A 0603YC682MAT2A AVX Corporation, CAP CER 6800PF 16V X7R 0603, 0603 (1608 Metric), Automotive, AEC-Q101, CoolMOS? View
GP2D020A065U GP2D020A065U Global Power Technologies Group, SIC SCHOTTKY RECTIFIER, TO-247-3, Automotive, AEC-Q101, CoolMOS? View
TL3302AF260QJ TL3302AF260QJ E-Switch, SWITCH TACTILE SPST-NO 0.05A 12V, -, Automotive, AEC-Q101, CoolMOS? View
92J3R6E 92J3R6E Ohmite, RES 3.6 OHM 2.25W 5% AXIAL, Axial, Automotive, AEC-Q101, CoolMOS? View
CMF701K0200FKBF CMF701K0200FKBF Vishay Dale, RES 1.02K OHM 1.75W 1% AXIAL, Axial, Automotive, AEC-Q101, CoolMOS? View
MBB02070C3004FCT00 MBB02070C3004FCT00 Vishay BC Components, RES 3M OHM 0.6W 1% AXIAL, Axial, Automotive, AEC-Q101, CoolMOS? View
CRCW060328K0FKTA CRCW060328K0FKTA Vishay Dale, RES SMD 28K OHM 1% 1/10W 0603, 0603 (1608 Metric), Automotive, AEC-Q101, CoolMOS? View
1330-40J 1330-40J API Delevan Inc., FIXED IND 6.8UH 185MA 2 OHM SMD, 2-SMD, Automotive, AEC-Q101, CoolMOS? View
MS27467T25B24SD-LC MS27467T25B24SD-LC Souriau, CONN PLUG HSG FMALE 24POS INLINE, -, Automotive, AEC-Q101, CoolMOS? View
VI-J6B-IW-F1 VI-J6B-IW-F1 Vicor Corporation, CONVERTER MOD DC/DC 95V 100W, Half Brick, Automotive, AEC-Q101, CoolMOS? View
XC6136N50DNR-G XC6136N50DNR-G Torex Semiconductor Ltd, ULTRA-LOW POWER (88NA) VOLTAGE D, -, Automotive, AEC-Q101, CoolMOS? View
Payment Methods
Delivery Services

Quick Inquiry

IPB65R310CFDAATMA1

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about IPB65R310CFDAATMA1?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

IPB65R310CFDAATMA1 Tags

  • IPB65R310CFDAATMA1
  • IPB65R310CFDAATMA1 PDF
  • IPB65R310CFDAATMA1 datasheet
  • IPB65R310CFDAATMA1 specification
  • IPB65R310CFDAATMA1 image
  • Infineon Technologies
  • Infineon Technologies IPB65R310CFDAATMA1
  • buy IPB65R310CFDAATMA1
  • IPB65R310CFDAATMA1 price
  • IPB65R310CFDAATMA1 distributor
  • IPB65R310CFDAATMA1 supplier
  • IPB65R310CFDAATMA1 wholesales

IPB65R310CFDAATMA1 is Available in