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IRF200B211

hot IRF200B211

IRF200B211

For Reference Only

Part Number IRF200B211
Heisener # H299-IRF200B211
Manufacturer Infineon Technologies
Description MOSFET N-CH 200V 12A TO-220AB
Datasheet IRF200B211 Datasheet
Package TO-220-3
In Stock 17244
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Apr 28 - May 3 (Choose Expedited Shipping)

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IRF200B211

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IRF200B211 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF200B211 Datasheet
PackageTO-220-3
SeriesHEXFET?, StrongIRFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 50V
Power Dissipation (Max)80W (Tc)
Rds On (Max) @ Id, Vgs170 mOhm @ 7.2A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IRF200B211 Datasheet

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