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IRF2907ZS-7PPBF

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IRF2907ZS-7PPBF

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Part Number IRF2907ZS-7PPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 75V 160A D2PAK7
Datasheet IRF2907ZS-7PPBF Datasheet
Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
In Stock 17,662 piece(s)
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Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # IRF2907ZS-7PPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF2907ZS-7PPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF2907ZS-7PPBFDatasheet
PackageTO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7580pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs3.8 mOhm @ 110A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IRF2907ZS-7PPBF Datasheet

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Page 2

IRF2907ZS-7PPbF HEXFET® Power MOSFET VDSS = 75V RDS(on) = 3.8mΩ ID = 160A  www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. S D G Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax         Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited)  mJ EAS (tested) Single Pulse Avalanche Energy Tested Value  IAR Avalanche Current A EAR Repetitive Avalanche Energy  mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 0.50 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient  ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state)  ––– 40 Max. 180 120 700 160 10 lbf•in (1.1N•m) 300 2.0 ± 20 160 410 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 Description This HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating tem- perature, fast switching speed and improved repeti- tive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing and low voltage Motor Drive Applications. PD - 97031D

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   2 www.irf.com  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).  Limited by TJmax, starting TJ = 25°C, L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use above this value.  Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.  This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.  Rθ is measured at TJ of approximately 90°C. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C RDS(on) SMD Static Drain-to-Source On-Resistance ––– 3.0 3.8 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 94 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 170 260 nC Qgs Gate-to-Source Charge ––– 55 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 66 ––– td(on) Turn-On Delay Time ––– 21 ––– ns tr Rise Time ––– 90 ––– td(off) Turn-Off Delay Time ––– 92 ––– tf Fall Time ––– 44 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 7580 ––– pF Coss Output Capacitance ––– 970 ––– Crss Reverse Transfer Capacitance ––– 540 ––– Coss Output Capacitance ––– 3750 ––– Coss Output Capacitance ––– 650 ––– Coss eff. Effective Output Capacitance ––– 1110 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 160 (Body Diode) A ISM Pulsed Source Current ––– ––– 700 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 35 53 ns Qrr Reverse Recovery Charge ––– 40 60 nC VDS = VGS, ID = 250µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 110A  TJ = 25°C, IF = 110A, VDD = 38V di/dt = 100A/µs  TJ = 25°C, IS = 110A, VGS = 0V  showing the integral reverse p-n junction diode. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V  MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 60V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 60V ƒ = 1.0MHz, See Fig. 5 RG = 2.6Ω ID = 110A VDS = 25V, ID = 110A VDD = 38V ID = 110A VGS = 20V VGS = -20V VDS = 60V VGS = 10V 

Page 4

   www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ≤60µs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 4.5V ≤60µs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 2 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( Α ) TJ = 25°C TJ = 175°C VDS = 25V ≤60µs PULSE WIDTH 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) 0 50 100 150 200 G fs , F or w ar d T ra ns co nd uc ta nc e (S ) TJ = 25°C TJ = 175°C VDS = 10V 380µs PULSE WIDTH

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   4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C ap ac ita nc e( pF ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 50 100 150 200 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 60V VDS= 38V VDS= 15V ID= 110A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 175°C VGS = 0V 0.1 1.0 10.0 100.0 VDS, Drain-toSource Voltage (V) 0.1 1 10 100 1000 10000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec DC LIMITED BY PACKAGE

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   www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 3.0 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 180A VGS = 10V 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 40 80 120 160 200 I D , D ra in C ur re nt ( A ) Limited By Package 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 1 T he rm al R es po ns e ( Z th JC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.1072 0.000096 0.2787 0.002614 0.1143 0.013847 τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 τ τC Ci i/Ri Ci= τi/Ri

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   6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + -  Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS Fig 14. Threshold Voltage vs. Temperature RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20VVGS 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 100 200 300 400 500 600 700 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 24A 34A BOTTOM 110A -75 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 250µA ID = 1.0mA ID = 1.0A

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   www.irf.com 7 Fig 15. Typical Avalanche Current vs.Pulsewidth Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) =T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 1 10 100 1000 A va la nc he C ur re nt ( A ) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 50 100 150 200 E A R , A va la nc he E ne rg y (m J) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 110A

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   8 www.irf.com Fig 17.        for N-Channel HEXFETPower MOSFETs     •       •      •           P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period     + - + + +- - -     •     •    !"!! •     #  $$ • !"!!%"     VDS 90% 10% VGS td(on) tr td(off) tf   &'≤ 1 (  #  ≤ 0.1 %     ! "  + - Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

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   www.irf.com 9 D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information  Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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Ann*****Walsh

December 14, 2020

Very professional sellers, they have adopted MSL packaging for different parts.

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December 10, 2020

No complaints. Works perfectly every single one of them! great quality! No bent pins either!

Kar***** Mani

December 9, 2020

Wow super fast delivery, product as described good company!

Alon*****chmitt

December 8, 2020

Fantastic quality products with fair and prompt shipping. Would save much time crossing all the features. Thank you for all your effort.

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