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IRF3709ZLPBF

hot IRF3709ZLPBF

IRF3709ZLPBF

For Reference Only

Part Number IRF3709ZLPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 87A TO-262
Datasheet IRF3709ZLPBF Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 10920
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 29 - Jul 4 (Choose Expedited Shipping)

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IRF3709ZLPBF

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IRF3709ZLPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF3709ZLPBF Datasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2130pF @ 15V
Power Dissipation (Max)79W (Tc)
Rds On (Max) @ Id, Vgs6.3 mOhm @ 21A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

IRF3709ZLPBF Datasheet

IRF3709ZLPBF Related Products

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hotIRF3709ZLPBF IRF3709ZS Infineon Technologies, MOSFET N-CH 30V 87A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, HEXFET?
hotIRF3709ZLPBF IRF3711ZS Infineon Technologies, MOSFET N-CH 20V 92A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
hotIRF3709ZLPBF IRF3711ZCS Infineon Technologies, MOSFET N-CH 20V 92A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
hotIRF3709ZLPBF IRF3707ZS Infineon Technologies, MOSFET N-CH 30V 59A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
hotIRF3709ZLPBF IRF3515STRL Infineon Technologies, MOSFET N-CH 150V 41A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
hotIRF3709ZLPBF IRF3315S Infineon Technologies, MOSFET N-CH 150V 21A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
hotIRF3709ZLPBF IRF3717PBF Infineon Technologies, MOSFET N-CH 20V 20A 8-SOIC, Package:8-SOIC (0.154", 3.90mm Width), Series:HEXFET? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:87A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.25V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 15V, Power Dissipation (Max):79W (Tc), Rds On (Max) @ Id, Vgs:6.3 mOhm @ 21A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-262, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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