Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

IRF40R207

hotIRF40R207

IRF40R207

For Reference Only

Part Number IRF40R207
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 56A DPAK
Datasheet IRF40R207 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 17,244 piece(s)
Unit Price $ 0.4084 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 2 - Jun 7 (Choose Expedited Shipping)
Request for Quotation

Part Number # IRF40R207 (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IRF40R207 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IRF40R207 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IRF40R207.

IRF40R207 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF40R207Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesHEXFET?, StrongIRFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2110pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)83W (Tc)
Rds On (Max) @ Id, Vgs5.1 mOhm @ 55A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

IRF40R207 Datasheet

Page 1

Page 2

StrongIRFET™ IRF40R207 HEXFET® Power MOSFET D S G Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free  RoHS Compliant, Halogen-Free VDSS 40V RDS(on) typ. 4.2m max 5.1m ID (Silicon Limited) 90A ID (Package Limited) 56A   Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature D-Pak IRF40R207 G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF40R207 D-Pak Tape and Reel 2000 IRF40R207 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 12 14 16 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta n ce ( m  ) ID = 55A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 20 40 60 80 100 I D , D ra in C ur re nt ( A ) Limited by package

Page 3

  IRF40R207 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 90 A   ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 64 IDM Pulsed Drain Current  337* PD @TC = 25°C Maximum Power Dissipation 83 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175   °C   Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  86 mJ EAS (Thermally limited) Single Pulse Avalanche Energy  165 IAR Avalanche Current  See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy  mJ Thermal Resistance   Symbol Parameter Typ. Max. Units RJC Junction-to-Case  ––– 1.8 °C/W  RCS Junction-to-Ambient (PCB Mounted) ––– 50 RJA Junction-to-Ambient  ––– 110 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 56 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1.0mA  RDS(on) ––– 4.2 5.1 m VGS = 10V, ID = 55A  ––– 5.9 ––– VGS = 6.0V, ID = 28A  VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 50µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.0 –––  Static Drain-to-Source On-Resistance Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.056mH,RG = 50, IAS = 55A, VGS =10V.  ISD  55A, di/dt  890A/µs, VDD  V(BR)DSS, TJ  175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH,RG = 50, IAS = 18A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf * Pulse drain current is limited at 224A by source bonding technology.

Page 4

  IRF40R207 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 170 ––– ––– S VDS = 10V, ID = 55A Qg Total Gate Charge ––– 45 68 ID = 55A Qgs Gate-to-Source Charge ––– 12 ––– VDS = 20V Qgd Gate-to-Drain Charge ––– 15 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 30 ––– td(on) Turn-On Delay Time ––– 7.8 ––– ns VDD = 20V tr Rise Time ––– 35 ––– ID = 30A td(off) Turn-Off Delay Time ––– 25 ––– RG= 2.7 tf Fall Time ––– 19 ––– VGS = 10V Ciss Input Capacitance ––– 2110 ––– pF   VGS = 0V Coss Output Capacitance ––– 340 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 400 ––– VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Output Capacitance (Time Related) ––– 498 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics   Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 90 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 337* integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.3 V TJ = 25°C,IS = 55A,VGS = 0V  dv/dt Peak Diode Recovery dv/dt ––– 6.4 ––– V/ns TJ = 175°C,IS = 55A,VDS = 40V trr Reverse Recovery Time ––– 21 ––– ns TJ = 25°C VDD = 34V ––– 22 ––– TJ = 125°C IF = 55A, Qrr Reverse Recovery Charge ––– 13 ––– nC TJ = 25°C di/dt = 100A/µs  ––– 15 ––– TJ = 125°C   IRRM Reverse Recovery Current ––– 1.1 ––– A TJ = 25°C  nC   D S G

Page 5

  IRF40R207 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 60µs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C u rr e nt ( A ) 4.5V 60µs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt (A ) TJ = 25°C TJ = 175°C VDS = 10V 60µs PULSE WIDTH -60 -20 20 60 100 140 180 TJ , Junction Temperature (°C) 0.6 1.0 1.4 1.8 2.2 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 55A VGS = 10V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss Fig 8. Typical Gate Charge vs. Drain-to-Source Voltage 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) 0 2 4 6 8 10 12 14 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 32V VDS= 20V VDS= 8V ID= 55A

Page 6

  IRF40R207 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015   I 40 207 Fig 10. Maximum Safe Operating Area Fig 11. Drain-to-Source Breakdown Voltage Fig 9. Typical Source-Drain Diode Forward Voltage Fig 12. Typical Coss Stored Energy Fig 13. Typical On-Resistance vs. Drain Current -60 -20 20 60 100 140 180 TJ , Temperature ( °C ) 38 40 42 44 46 48 50 V (B R )D S S , D ra in -t o- S ou rc e B re ak do w n V ol ta ge ( V ) Id = 1.0mA -5 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) 0.0 0.1 0.1 0.2 0.2 0.3 0.3 E ne rg y (µ J) 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) 0 4 8 12 16 20 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m  ) VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 175°C VGS = 0V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec 100µsec DC OPERATION IN THIS AREA LIMITED BY RDS(on) LIMITED BY PACKAGE

Page 7

  IRF40R207 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 16. Maximum Avalanche Energy vs. Temperature Fig 15. Avalanche Current vs. Pulse Width Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figures 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 T he rm al R es po ns e ( Z th JC ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 20 40 60 80 100 E A R , A va la nc he E ne rg y (m J) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 55A 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 0.1 1 10 100 1000 A va la nc he C ur re nt ( A ) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse)

Page 8

  IRF40R207 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Fig 21. Typical Stored Charge vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt -75 -25 25 75 125 175 TJ , Temperature ( °C ) 0.5 1.5 2.5 3.5 4.5 V G S (t h) , G at e th re sh ol d V ol ta ge ( V ) ID = 50µA ID = 250µA ID = 1.0mA ID = 1.0A 0 200 400 600 800 diF /dt (A/µs) 0 1 2 3 4 5 6 7 8 I R R M ( A ) IF = 37A VR = 34V TJ = 25°C TJ = 125°C 0 200 400 600 800 diF /dt (A/µs) 0 1 2 3 4 5 6 7 8 I R R M ( A ) IF = 55A VR = 34V TJ = 25°C TJ = 125°C 0 200 400 600 800 diF /dt (A/µs) 0 10 20 30 40 50 60 70 80 90 100 110 120 Q R R ( nC ) IF = 37A VR = 34V TJ = 25°C TJ = 125°C 0 200 400 600 800 diF /dt (A/µs) 0 10 20 30 40 50 60 70 80 90 100 110 120 Q R R ( nC ) IF = 55A VR = 34V TJ = 25°C TJ = 125°C

Page 9

  IRF40R207 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 23a. Unclamped Inductive Test Circuit RG IAS 0.01tp D.U.T LVDS + - VDD DRIVER A 15V 20V Fig 24a. Switching Time Test Circuit Fig 25a. Gate Charge Test Circuit tp V(BR)DSS IAS Fig 23b. Unclamped Inductive Waveforms Fig 24b. Switching Time Waveforms Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25b. Gate Charge Waveform VDD 

Page 10

  IRF40R207 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information INTERNATIONAL ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" OR Note: "P" in assembly line position EXAMPLE: LOT CODE 1234 THIS IS AN IRFR120 WITH ASSEMBLY indicates "Lead-Free" PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE A = ASSEMBLY SITE CODE PART NUMBER WEEK 16 DATE CODE YEAR 1 = 2001 RECTIFIER INTERNATIONAL LOGO LOT CODE ASSEMBLY 3412 IRFR120 116A LINE A 34 RECTIFIER LOGO IRFR120 12 ASSEMBLY LOT CODE YEAR 1 = 2001 DATE CODE PART NUMBER WEEK 16 "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL)

IRF40R207 Reviews

Average User Rating
5 / 5 (156)
★ ★ ★ ★ ★
5 ★
140
4 ★
16
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Emmal*****arner

May 22, 2020

Best organized online supplier, excellent service personnel.

Ko***** Kar

May 21, 2020

Works just like the original one and even has the correct connectors installed.

Jeff*****Sierra

May 20, 2020

Always have what I need, fast and easy for making an order, fast shipping and great service! That about covers it! Many Thanks!

Kamry*****ments

May 6, 2020

Great dealing with you Guys. Thanks for a very prompt delivery.

Sha*****Anand

April 29, 2020

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Mel***** Kim

April 21, 2020

I've made a few purchases from Heisener and always get a friendly technician helped me with locate what I was looking for. That kind of attitude is greatly appreciated.

Avi *****rwal

April 17, 2020

Super Fast Delivery & Well Packaged - Great Service - No Problems

Con*****Datta

April 11, 2020

Good seller, incredible reliable.Item as described. Very professional

Har***** Hall

April 9, 2020

Great price. Worked well for my needs.

Darr*****Corona

April 4, 2020

No complaints. Works perfectly every single one of them! great quality! No bent pins either!

IRF40R207 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

IRF40R207 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

IRF40R207 Related Products

T95S475K6R3HSSL T95S475K6R3HSSL Vishay Sprague, CAP TANT 4.7UF 6.3V 10% 1507, 1507 (3718 Metric), HEXFET?, StrongIRFET? View
1812J0160180FFR 1812J0160180FFR Knowles Syfer, CAP CER 18PF 16V C0G/NP0 1812, 1812 (4532 Metric), HEXFET?, StrongIRFET? View
2225Y0250564JXR 2225Y0250564JXR Knowles Syfer, CAP CER 2225, -, HEXFET?, StrongIRFET? View
ECA-1CM221B ECA-1CM221B Panasonic Electronic Components, CAP ALUM 220UF 20% 16V RADIAL, Radial, Can, HEXFET?, StrongIRFET? View
XPGBWT-01-R250-00JC4 XPGBWT-01-R250-00JC4 Cree Inc., LED XLAMP XP-G NEUTRAL WHITE SMD, 1414 (3535 Metric), HEXFET?, StrongIRFET? View
4300T1LC 4300T1LC Visual Communications Company - VCC, LED RED 635NM AXIAL, Axial, Flat Leads, HEXFET?, StrongIRFET? View
RN55E8250DBSL RN55E8250DBSL Vishay Dale, RES 825 OHM 1/8W .5% AXIAL, Axial, HEXFET?, StrongIRFET? View
PFC-W0805LF-03-49R9-B PFC-W0805LF-03-49R9-B TT Electronics/IRC, RES SMD 49.9 OHM 0.1% 1/4W 0805, 0805 (2012 Metric), HEXFET?, StrongIRFET? View
1-284541-9 1-284541-9 TE Connectivity AMP Connectors, TERM BLOCK HDR 19POS 3.81MM, -, HEXFET?, StrongIRFET? View
FW-25-03-F-D-215-157-A FW-25-03-F-D-215-157-A Samtec Inc., .050'' BOARD SPACERS, -, HEXFET?, StrongIRFET? View
BACC63BV14F15S6 BACC63BV14F15S6 Cinch Connectivity Solutions, CONN RCPT FMALE 15 POS GOLD CRMP, -, HEXFET?, StrongIRFET? View
M83723/72W2219N-LC M83723/72W2219N-LC TE Connectivity Deutsch Connectors, CONN RCPT HSNG MALE 19POS PNL MT, -, HEXFET?, StrongIRFET? View
Payment Methods
Delivery Services

Quick Inquiry

IRF40R207

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about IRF40R207?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

IRF40R207 Tags

  • IRF40R207
  • IRF40R207 PDF
  • IRF40R207 datasheet
  • IRF40R207 specification
  • IRF40R207 image
  • Infineon Technologies
  • Infineon Technologies IRF40R207
  • buy IRF40R207
  • IRF40R207 price
  • IRF40R207 distributor
  • IRF40R207 supplier
  • IRF40R207 wholesales

IRF40R207 is Available in