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IRF520

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IRF520

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Part Number IRF520
Manufacturer Vishay Siliconix
Description MOSFET N-CH 100V 9.2A TO-220AB
Datasheet IRF520 Datasheet
Package TO-220-3
In Stock 65,420 piece(s)
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Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # IRF520 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF520 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF520Datasheet
PackageTO-220-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs270 mOhm @ 5.5A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IRF520 Datasheet

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Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF520, SiHF520 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single N-Channel MOSFET G D S TO-220AB G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF520PbF SiHF520-E3 SnPb IRF520 SiHF520 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 9.2 ATC = 100 °C 6.5 Pulsed Drain Currenta IDM 37 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 200 mJ Repetitive Avalanche Currenta IAR 9.2 A Repetitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply

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www.vishay.com Document Number: 91017 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 62 °C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 A b - - 0.27  Forward Transconductance gfs VDS = 50 V, ID = 5.5 A b 2.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - pFOutput Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 34 - Total Gate Charge Qg VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b - - 16 nC Gate-Source Charge Qgs - - 4.4 Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2, see fig. 10b - 8.8 - ns Rise Time tr - 30 - Turn-Off Delay Time td(off) - 19 - Fall Time tf - 20 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 9.2 A Pulsed Diode Forward Currenta ISM - - 37 Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 V b - - 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - 110 260 ns Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

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Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 91017_01 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) I D , D ra in C u rr e n t (A ) 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) I D , D ra in C u rr e n t (A ) 4.5 VBottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 175 °C 91017_02 101 100 10-1 100 101 20 µs Pulse Width VDS = 50 V I D , D ra in C u rr e n t (A ) VGS, Gate-to-Source Voltage (V) 5 6 7 8 9 104 25 °C 175 °C 91017_03 101 100 ID = 9.2 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) R D S (o n ), D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) 91017_04 180

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www.vishay.com Document Number: 91017 4 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 750 600 450 300 0 150 100 101 C a p a c it a n c e ( p F ) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91017_05 QG, Total Gate Charge (nC) V G S , G a te -t o -S o u rc e V o lt a g e ( V ) 20 16 12 8 0 4 0 4 2016128 ID = 9.2 A For test circuit see figure 13 91017_06 VDS = 20 V VDS = 50 V VDS = 80 V 101 100 VSD, Source-to-Drain Voltage (V) I S D , R e v e rs e D ra in C u rr e n t (A ) 25 °C 175 °C VGS = 0 V 91017_07 0.5 0.90.80.70.6 1.0 1.21.1 10-1 102 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) I D , D ra in C u rr e n t (A ) TC = 25 °C TJ = 175 °C Single Pulse 0.1 103 0.1 2 5 1 2 5 10 2 5 2 5 2 5 1 2 5 10 2 5 102 2 5 103 91017_08

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Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case I D , D ra in C u rr e n t (A ) TC, Case Temperature (°C) 0 2 4 6 8 10 25 1751501007550 91017_09 125 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V + - VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 10 1 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1 t2 t1, Rectangular Pulse Duration (s) T h e rm a l R e s p o n s e ( Z th J C ) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 - 0.5 0.2 0.1 0.05 0.02 0.01 91017_11

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www.vishay.com Document Number: 91017 6 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS 0.01 Ωtp D.U.T L VDS + - V DD A 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 600 0 100 200 300 400 500 25 1501251007550 Starting TJ, Junction Temperature (°C) E A S , S in g le P u ls e E n e rg y ( m J ) Bottom Top ID 3.8 A 6.5 A 9.2 A VDD = 25 V 91017_12c 175 QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

Page 8

Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520, SiHF520 Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91017. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V a ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD

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Package Information www.vishay.com Vishay Siliconix Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-220-1 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM M* 321 L L (1 ) D H (1 ) Q Ø P A F J(1) b(1) e(1) e E b C DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Package Picture ASE Xi’an

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