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IRF6712STRPBF

hot IRF6712STRPBF

IRF6712STRPBF

For Reference Only

Part Number IRF6712STRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 17A DIRECTFET
Datasheet IRF6712STRPBF Datasheet
Package DirectFET? Isometric SQ
In Stock 11496 piece(s)
Unit Price $ 0.5998 *
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IRF6712STRPBF

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IRF6712STRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF6712STRPBF Datasheet
PackageDirectFET? Isometric SQ
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25��C17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 13V
Vgs (Max)��20V
Power Dissipation (Max)2.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs4.9 mOhm @ 17A, 10V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET? SQ
Package / CaseDirectFET? Isometric SQ

IRF6712STRPBF Datasheet

Page 1

Page 2

DirectFETPower MOSFET  Description The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage          Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.14mH, RG = 25, IAS = 13A.  DirectFET ISOMETRIC  SQ SX ST MQ MX MT MP  RoHS Compliant and Halogen Free   Low Profile (<0.7 mm)  Dual Sided Cooling Compatible   Ultra Low Package Inductance  Optimized for High Frequency Switching   Ideal for CPU Core DC-DC Converters  Optimized for both Sync.FET and some Control FET application  Low Conduction and Switching Losses  Compatible with existing Surface Mount Techniques   100% Rg tested 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 12 T yp ic al R D S (o n) ( m  ) ID = 17A TJ = 25°C TJ = 125°C Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  EAS Single Pulse Avalanche Energy  mJ IAR Avalanche Current A13 Max. 13 68 130 ±20 25 17 13 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 12nC 4.0nC 1.7nC 14nC 10nC 1.9V 0 5 10 15 20 25 30 35 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 20V VDS= 13V ID= 13A               Base Part Number Package Type Orde rable Part Number Form Quantity  IRF6712SPbF DirectFET Small Can Tape and Reel 4800 IRF6712STRPbF Tape and Reel 1000 IRF6712STR1PbF Standard Pack

Page 3

        IRF6712SPbF  Pulse width  400μs; duty cycle  2%.  Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.9 m ––– 6.7 8.7 VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 40 ––– ––– S Qg Total Gate Charge ––– 12 18 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.7 ––– nC Qgd Gate-to-Drain Charge ––– 4.0 ––– Qgodr Gate Charge Overdrive ––– 3.5 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.8 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– 1.7 3.0  td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 40 ––– ns td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1570 ––– Coss Output Capacitance ––– 490 ––– pF Crss Reverse Transfer Capacitance ––– 210 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 45 (Body Diode) A ISM Pulsed Source Current ––– ––– 130 (Body Diode) VSD Diode Forward Voltage ––– 0.81 1.0 V trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 14 21 nC ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = -20V VDS = 25V, VGS = 0V VDS = 13V VDS = 25V, VGS = 0V, TJ = 125°C MOSFET symbol RG = 1.8 VDS = 13V, ID = 13A Conditions See Fig. 17 ID = 13A VGS = 0V VDS = 13V ID = 13A VDD = 13V, VGS = 4.5V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 17A  VGS = 20V di/dt = 200A/μs  TJ = 25°C, IS = 13A, VGS = 0V  showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 13A  VDS = VGS, ID = 50μA TJ = 25°C, IF = 13A VGS = 4.5V

Page 4

        IRF6712SPbF Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  Ris measured at TJ of approximately 90°C.  Surface mounted on 1 in. square Cu (still air).       with small clip heatsink (still air)  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 100 T he rm al R es po ns e ( Z th JA ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc J J 1 1 2 2 3 3 R1 R1 R2 R2 R3 R3 Ci= iRi Ci= iRi 4 4 R4 R4 A A 5 5 R5 R5 Ri (°C/W) i (sec) 1.61955 0.000126 2.14056 0.001354 22.2887 0.375850 20.0457 7.41 11.9144 99 Absolute Maximum Ratings Parameter Units PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation PD @TC = 25°C Power Dissipation  TP Peak Soldering Temperature °C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RJA Junction-to-Ambient  ––– 58 RJA Junction-to-Ambient  12.5 ––– RJA Junction-to-Ambient  20 ––– °C/W RJC Junction-to-Case  ––– 3.5 RJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor  W/°C0.017 270 -40 to + 150 Max. 36 2.2 1.4

Page 5

        IRF6712SPbF Fig 5. Typical Output CharacteristicsFig 4. Typical Output Characteristics Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.5V 60μs PULSE WIDTH Tj = 150°C VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V 60μs PULSE WIDTH Tj = 25°C 2.5V 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VDS = 15V 60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 T yp ic al R D S (o n) ( N or m al iz ed ) ID = 17A VGS = 10V VGS = 4.5V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 C , C ap ac ita nc e( pF ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 50 100 150 ID, Drain Current (A) 0 5 10 15 20 25 T yp ic al R D S (o n) ( m  ) TJ = 25°C Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V

Page 6

        IRF6712SPbF Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Case Temperature Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Drain Current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VSD, Source-to-Drain Voltage (V) 0 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 T yp ic al V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 50μA ID = 100μA ID = 250μA ID = 1.0mA ID = 1.0A 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 10 20 30 40 50 60 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 3.8A 5.4A BOTTOM 13A 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY R DS(on) TA = 25°C TJ = 150°C Single Pulse 100μsec 1msec 10msec 25 50 75 100 125 150 TC , Case Temperature (°C) 0 10 20 30 40 50 60 70 I D , D ra in C ur re nt ( A )

Page 7

       ! IRF6712SPbF Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform Fig 16b. Unclamped Inductive Waveforms tp V(BR)DSS IAS Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time WaveformsFig 17a. Switching Time Test Circuit RG IAS 0.01tp D.U.T LVDS + - VDD DRIVER A 15V 20V  Vds Vgs Id Vgs(th) Qgs1Qgs2QgdQgodr 1K VCC DUT 0 L S 20 VDS 90% 10% VGS td(on) tr td(off) tf             + - 

Page 8

       " IRF6712SPbF Fig 18. #  $%  $& '%  for HEXFET Power MOSFETs                       !  P.W. Period di/dt Diode Recovery dv/dt Ripple  5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period (((    ((( + - + + +- - -      "#   $ %  "  ! &  '(''   $   )) '('' *  "  (      (( ( (   ! (( "             % % #)*' ++    ,-.    % // 0 %% 1&  #)*' '0% %    %   %  %1% %/% G = GATE D = DRAIN S = SOURCE D D DD G S

Page 9

       2 IRF6712SPbF DirectFET Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET Part Marking Line above the last character of the date code indicates "Lead-Free"                  CODE A B C D E F G H J K L M R P IMPERIAL MIN 4.75 3.70 2.75 0.35 0.48 0.78 0.88 0.78 N/A 0.93 2.00 0.616 0.020 0.08 MAX 4.85 3.95 2.85 0.45 0.52 0.82 0.92 0.82 N/A 0.97 2.10 0.676 0.080 0.17 MIN 0.187 0.146 0.108 0.014 0.019 0.031 0.035 0.031 N/A 0.037 0.079 0.0235 0.0008 0.003 METRIC DIMENSIONS MAX 0.191 0.156 0.112 0.018 0.020 0.032 0.036 0.032 N/A 0.038 0.083 0.0274 0.0031 0.007

IRF6712STRPBF Reviews

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Rena*****unda

September 9, 2019

Heisener is on a very short list of companies I highly recommend without any hesitation. From stock, pricing, ease of ordering and great service, they have it all.

Jole*****ommen

August 18, 2019

Great dealing with you Guys. Thanks for a very prompt delivery.

Embe*****Weber

May 10, 2019

Very good, fast shipping, super reliable seller.

Cha*****Mccoy

May 5, 2019

Very supportive of my small orders, but very glad easy to work with. Hard to see how it could be any more efficient!

Sun*****Seth

February 28, 2019

Super easy to replace and labelled terminals made it a quick replacement.

Eli*****tal

January 21, 2019

The order process is easy and user friendly, very helpful customer service, always fast shipping.

Adaly*****arosa

January 3, 2019

Worked like it was intended.

Mabe*****nghal

September 24, 2018

You guys and girls are fantastic! The selection is fantastic and service is great.

Danie*****thews

July 27, 2018

Very quick dispatch, arrived the next day. Item as described. Thanks!

Robe*****oyle

July 17, 2018

Sure appreciate your service high standard, expertise and skills. Thanks Much!!!

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