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IRF6714MTRPBF

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IRF6714MTRPBF

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Part Number IRF6714MTRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 29A DIRECTFET
Datasheet IRF6714MTRPBF Datasheet
Package DirectFET? Isometric MX
In Stock 10,358 piece(s)
Unit Price $ 1.2441 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 24 - Sep 29 (Choose Expedited Shipping)
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Part Number # IRF6714MTRPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF6714MTRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF6714MTRPBFDatasheet
PackageDirectFET? Isometric MX
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds3890pF @ 13V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs2.1 mOhm @ 29A, 10V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET? MX
Package / CaseDirectFET? Isometric MX

IRF6714MTRPBF Datasheet

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www.irf.com 1 04/29/09 IRF6714MPbF IRF6714MTRPbF DirectFETPower MOSFET  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage           Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A.   RoHs Compliant and Halogen Free   Low Profile (<0.6 mm)  Dual Sided Cooling Compatible   Ultra Low Package Inductance  Optimized for High Frequency Switching   Ideal for CPU Core DC-DC Converters  Optimized for Sync. FET socket of Sync. Buck Converter  Low Conduction and Switching Losses  Compatible with existing Surface Mount Techniques   100% Rg tested SQ SX ST MQ MX MT MP DirectFET ISOMETRIC Description The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 T yp ic al R D S (o n) ( m Ω ) ID = 29A TJ = 25°C TJ = 125°C Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A V A 23 175 Max. 23 166 234 ±20 25 29 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 29nC 8.3nC 4.1nC 36nC 23nC 1.9V 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 14 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 20V VDS= 13V ID= 23A 

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  2 www.irf.com  Pulse width ≤ 400µs; duty cycle ≤ 2%  Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.6 2.1 ––– 2.6 3.4 VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 122 ––– ––– S Qg Total Gate Charge ––– 29 44 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.1 ––– Qgd Gate-to-Drain Charge ––– 8.3 ––– Qgodr Gate Charge Overdrive ––– 8.1 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 12 ––– Qoss Output Charge ––– 23 ––– nC RG Gate Resistance ––– 1.2 2.2 Ω td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 26 ––– td(off) Turn-Off Delay Time ––– 13 ––– tf Fall Time ––– 9.6 ––– Ciss Input Capacitance ––– 3890 ––– Coss Output Capacitance ––– 1110 ––– Crss Reverse Transfer Capacitance ––– 490 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 26 39 ns Qrr Reverse Recovery Charge ––– 36 54 nC 112 234 ––– ––– ––– ––– nA µA mΩ VDS = VGS, ID = 100µA VGS = 4.5V, ID = 23A  VGS = 20V VGS = -20V VDS = 20V, VGS = 0V A nC ns pF di/dt = 200A/µs  TJ = 25°C, IS = 23A, VGS = 0V  showing the integral reverse p-n junction diode. TJ = 25°C, IF = 23A VGS = 0V VDS = 13V ID = 23A VDD = 13V, VGS = 4.5V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 29A  VDS = 13V VDS = 20V, VGS = 0V, TJ = 125°C VDS = 13V, ID = 23A MOSFET symbol RG = 1.8Ω, RD = 0.54Ω Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = 4.5V ID = 23A

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  www.irf.com 3 Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient   Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  Rθ is measured at TJ of approximately 90°C.  Surface mounted on 1 in. square Cu (still air).   with small clip heatsink (still air)  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 100 T he rm al R es po ns e ( Z th JA ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc Ri (°C/W) τi (sec) 1.3634 0.000202 7.8361 0.096325 19.8534 1.3861 15.9581 51 τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci= τi/Ri Ci= τi/Ri τA τA τ4 τ4 R4 R4 Absolute Maximum Ratings Parameter Units PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation PD @TC = 25°C Power Dissipation  TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient  ––– 45 RθJA Junction-to-Ambient  12.5 ––– RθJA Junction-to-Ambient  20 ––– RθJC Junction-to-Case  ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor  W/°C0.022 270 -40 to + 150 Max. 89 2.8 1.8 W °C °C/W

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  4 www.irf.com Fig 5. Typical Output CharacteristicsFig 4. Typical Output Characteristics Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10.0V 5.00V 4.50V 4.00V 3.50V 3.25V 3.00V BOTTOM 2.75V ≤60µs PULSE WIDTH Tj = 25°C 2.75V 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.75V ≤60µs PULSE WIDTH Tj = 150°C VGS TOP 10.0V 5.00V 4.50V 4.00V 3.50V 3.25V 3.00V BOTTOM 2.75V 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VDS = 15V ≤60µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 T yp ic al R D S (o n) ( N or m al iz ed ) ID = 29A VGS = 10V VGS = 4.5V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C ap ac ita nc e( pF ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 50 100 150 200 ID, Drain Current (A) 0 4 8 12 16 20 T yp ic al R D S (o n) ( m Ω ) TJ = 25°CVgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V

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  www.irf.com 5 Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Case Temperature Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Drain Current 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T yp ic al V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY R DS(on) TA = 25°C TJ = 150°C Single Pulse 100µsec 1msec 10msecDC 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 100 200 300 400 500 600 700 800 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 2.43A 3.22A BOTTOM 23.0A 25 50 75 100 125 150 TC , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 180 I D , D ra in C ur re nt ( A )

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  6 www.irf.com Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform Fig 16b. Unclamped Inductive Waveforms tp V(BR)DSS IAS Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time WaveformsFig 17a. Switching Time Test Circuit RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V  Vds Vgs Id Vgs(th) Qgs1Qgs2QgdQgodr 1K VCC DUT 0 L S 20 VDS 90% 10% VGS td(on) tr td(off) tf    ≤ 1      ≤ 0.1 %     + -

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  www.irf.com 7 Fig 18.    for HEXFET Power MOSFETs       •       •   •         P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period    + - + + +- - -     • !"   # $ •  !   %  &'&& •    #     (( • &'&& ) !  '             !                !!   " #$ %%&'( $ ) &  '' $  (%) G = GATE D = DRAIN S = SOURCE D D D D G S S

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  8 www.irf.com                !!   " #$ %%&'( $ )&   '' $  (%)   !   " LOGO GATE MARKING BATCH NUMBER PART NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 CODE A B C D E F G H J K L M R P DIMENSIONS METRIC IMPERIAL

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Ros*****Cohen

August 17, 2020

very pleased with item, thank you.

Demet*****Agarwal

August 13, 2020

Well packed in anti-static bags. Repaired my amp perfectly - thank you!

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August 9, 2020

I am satisfied with Heisener company

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August 1, 2020

Great communication. A pleasure to do business with.

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July 28, 2020

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July 24, 2020

The best choice, clear and easy to make an order. Gives me full control.

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July 21, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent

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July 16, 2020

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July 13, 2020

Sure appreciate your service high standard, expertise and skills. Thanks Much!!!

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July 12, 2020

Excellent safe and secure packing. Fast ship out. Thanks

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