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IRF6795MTRPBF

hot IRF6795MTRPBF

IRF6795MTRPBF

For Reference Only

Part Number IRF6795MTRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 32A DIRECTFET-MX
Datasheet IRF6795MTRPBF Datasheet
Package DirectFET? Isometric MX
In Stock 132932 piece(s)
Unit Price $ 1.2155 *
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IRF6795MTRPBF

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IRF6795MTRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF6795MTRPBF Datasheet
PackageDirectFET? Isometric MX
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25��C32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4280pF @ 13V
Vgs (Max)��20V
Power Dissipation (Max)2.8W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs1.8 mOhm @ 32A, 10V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET? MX
Package / CaseDirectFET? Isometric MX

IRF6795MTRPBF Datasheet

Page 1

Page 2

www.irf.com 1 02/10/2010 IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage           Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.60mH, RG = 25Ω, IAS = 25A.  DirectFET ISOMETRIC  SQ SX ST MQ MX MT MP VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V Description The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets.  RoHS Compliant Containing No Lead and Halogen Free   Integrated Monolithic Schottky Diode  Low Profile (<0.7 mm)  Dual Sided Cooling Compatible   Ultra Low Package Inductance  Optimized for High Frequency Switching   Ideal for CPU Core DC-DC Converters  Optimized for Sync. FET socket of Sync. Buck Converter  Low Conduction and Switching Losses  Compatible with existing Surface Mount Techniques   100% Rg tested Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 35nC 10nC 4.8nC 34nC 27nC 1.8V 0 10 20 30 40 50 60 70 80 90 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 20V VDS= 13V ID= 25A 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 1 2 3 4 5 6 T yp ic al R D S (o n) ( m Ω ) ID = 32A TJ = 25°C TJ = 125°C Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  EAS Single Pulse Avalanche Energy  mJ IAR Avalanche Current A25 Max. 25 160 250 ±20 25 32 190 

Page 3

   2 www.irf.com  Pulse width ≤ 400µs; duty cycle ≤ 2%.  Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 11 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.4 1.8 mΩ ––– 2.4 3.2 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 500 µA ––– ––– 5.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 100 ––– ––– S Qg Total Gate Charge ––– 35 53 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.8 ––– nC Qgd Gate-to-Drain Charge ––– 10 ––– Qgodr Gate Charge Overdrive ––– 11 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 14.8 ––– Qoss Output Charge ––– 27 ––– nC RG Gate Resistance ––– 1.3 2.2 Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 27 ––– ns td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 11 ––– Ciss Input Capacitance ––– 4280 ––– Coss Output Capacitance ––– 1280 ––– pF Crss Reverse Transfer Capacitance ––– 550 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 32 (Body Diode) A ISM Pulsed Source Current ––– ––– 250 (Body Diode) VSD Diode Forward Voltage ––– ––– 0.75 V trr Reverse Recovery Time ––– 27 41 ns Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 200A/µs  TJ = 25°C, IS = 25A, VGS = 0V  showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 25A  VDS = VGS, ID = 10mA VDS = VGS, ID = 100µA TJ = 25°C, IF = 25A VGS = 4.5V ID = 25A VGS = 0V VDS = 13V ID = 25A VDD = 13V, VGS = 4.5V Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 5mA VGS = 10V, ID = 32A  VGS = 20V VGS = -20V VDS = 20V, VGS = 0V VDS = 13V VDS = 20V, VGS = 0V, TJ = 125°C MOSFET symbol RG = 1.8Ω VDS = 13V, ID = 25A Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V

Page 4

   www.irf.com 3 Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  (At lower pulse widths ZthJA & ZthJC are combined)  Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  Rθ is measured at     Surface mounted on 1 in. square Cu (still air).    with small clip heatsink (still air)  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Absolute Maximum Ratings Parameter Units PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation PD @TC = 25°C Power Dissipation  TP Peak Soldering Temperature °C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient  ––– 45 RθJA Junction-to-Ambient  12.5 ––– RθJA Junction-to-Ambient  20 ––– °C/W RθJC Junction-to-Case  ––– 1.66 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor  W/°C0.022 270 -40 to + 150 Max. 75 2.8 1.8 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) 0.01 0.1 1 10 100 T he rm al R es po ns e ( Z th JA ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci= τi/Ri Ci= τ i/Ri τ4 τ4 R4 R4 τA τA R8 R8 τ5 τ5 R5 R5 τ6 τ6 R6 R6 τ7 τ7 R7 R7 Ri (°C/W) τi (sec) 1.64e-02 1.01e-06 2.21e-02 6.00e-06 2.30e-01 8.20e-05 8.64e-01 1.56e-03 1.66e+00 3.96e-03 4.90e-01 6.48e-03 2.37e+01 1.03e+00 1.80e+01 3.98e+01

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   4 www.irf.com Fig 5. Typical Output CharacteristicsFig 4. Typical Output Characteristics Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V ≤60µs PULSE WIDTH Tj = 25°C 2.3V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.3V ≤60µs PULSE WIDTH Tj = 150°C VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VDS = 15V ≤60µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 T yp ic al R D S (o n) ( N or m al iz ed ) ID = 32A VGS = 10V VGS = 4.5V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C ap ac ita nc e( pF ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 50 100 150 200 ID, Drain Current (A) 0 2 4 6 8 10 T yp ic al R D S (o n) ( m Ω ) TJ = 25°C Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V

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   www.irf.com 5 Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Case Temperature Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Drain Current 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 0 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 T yp ic al V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 10mA 25 50 75 100 125 150 TC , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 I D , D ra in C ur re nt ( A ) 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 200 400 600 800 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 4.0A 9.2A BOTTOM 25A 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY RDS(on) TA = 25°C TJ = 150°C Single Pulse 100µsec 1msec 10msec DC

Page 7

   6 www.irf.com Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform Fig 16b. Unclamped Inductive Waveforms tp V(BR)DSS IAS Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time WaveformsFig 17a. Switching Time Test Circuit RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V  Vds Vgs Id Vgs(th) Qgs1Qgs2QgdQgodr 1K VCC DUT 0 L S 20 VDS 90% 10% VGS td(on) tr td(off) tf    ≤ 1      ≤ 0.1 %     + -

Page 8

   www.irf.com 7 Fig 18.     for HEXFET Power MOSFETs       •       •   •         P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period    + - + + +- - -     • !"   # $ •  !   %  &'&& •    #     (( • &'&& ) !  '             !                  !" #$% &&'() %* '  (( %  )&* G = GATE D = DRAIN S = SOURCE D D D D G S S

Page 9

   8 www.irf.com DirectFET Part Marking                  !" #$% &&'() %*'   (( %  )&* MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 CODE A B C D E F G H J K L M R P DIMENSIONS METRIC IMPERIAL GATE MARKING PART NUMBER LOGO BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free"

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