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IRF7379TR

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IRF7379TR

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Part Number IRF7379TR
Manufacturer Infineon Technologies
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet IRF7379TR Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 48,814 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 27 - Oct 2 (Choose Expedited Shipping)
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Part Number # IRF7379TR (Transistors - FETs, MOSFETs - Arrays) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF7379TR Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet IRF7379TRDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesHEXFET?
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.8A, 4.3A
Rds On (Max) @ Id, Vgs45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
Power - Max2.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

IRF7379TR Datasheet

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D 1 N -C H A N N EL MO S FET P -C H AN N E L MO S FET D 1 D 2 D 2 G 1 S2 G 2 S1 T op V iew 81 2 3 4 5 6 7 HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 12/8/98 S O -8 l Generation V Technology l Ultra Low On-Resistance l Complimentary Half Bridge l Surface Mount l Fully Avalanche Rated IRF7379 Description N-Ch P-Ch VDSS 30V -30V RDS(on) 0.045Ω 0.090Ω www.irf.com 1 Parameter Units A Absolute Maximum Ratings Thermal Resistance Ratings Parameter Max. Units RθJA Maximum Junction-to-Ambient„ 50 °C/W Max. N-Channel P-Channel VSD Drain-to-Source Voltage 30 -30 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.8 -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.6 -3.4 IDM Pulsed Drain Current  46 -34 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt ‚ 5.0 -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C PD - 91625

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IRF7379 2 www.irf.com  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Notes: ‚ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Parameter Min. Typ. Max. Units Conditions N-Ch 30 — — VGS = 0V, ID = 250µA P-Ch -30 — — VGS = 0V, ID = -250µA N-Ch — 0.032 — Reference to 25°C, ID = 1mA P-Ch — -0.037 — Reference to 25°C, ID = -1mA — 0.038 0.045 VGS = 10V, ID = 5.8A ƒ — 0.055 0.075 VGS = 4.5V, ID = 4.9A ƒ — 0.070 0.090 VGS = -10V, ID =- 4.3A ƒ — 0.130 0.180 VGS = -4.5V, ID =- 3.7A ƒ N-Ch 1.0 — — VDS = VGS, ID = 250µA P-Ch -1.0 — — VDS = VGS, ID = -250µA N-Ch 5.2 — — VDS = 15V, ID = 2.4A ƒ P-Ch 2.5 — — VDS = -24V, ID = -1.8A ƒ N-Ch — — 1.0 VDS = 24 V, VGS = 0V P-Ch — — -1.0 VDS = -24V, VGS = 0V N-Ch — — 25 VDS = 24 V, VGS = 0V, TJ = 125°C P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V N-Ch — — 25 P-Ch — — 25 N-Ch — — 2.9 P-Ch — — 2.9 N-Ch — — 7.9 P-Ch — — 9.0 N-Ch — 6.8 — P-Ch — 11 — N-Ch — 21 — P-Ch — 17 — N-Ch — 22 — P-Ch — 25 — N-Ch — 7.7 — P-Ch — 18 — LD Internal Drain Inductace N-P — 4.0 — Between lead, 6mm (0.25in.) from LS Internal Source Inductance N-P — 6.0 — package and center of die contact N-Ch — 520 — P-Ch — 440 — N-Ch — 180 — P-Ch — 200 — N-Ch — 72 — P-Ch — 93 — Parameter Min. Typ. Max. Units Conditions N-Ch — — 3.1 P-Ch — — -3.1 N-Ch — — 46 P-Ch — — -34 N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V ƒ P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V ƒ N-Ch — 47 71 P-Ch — 53 80 N-Ch — 56 84 P-Ch — 66 99 V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics V V/°C Ω V S µA nC ns nH pF N-Channel ID = 2.4A, VDS = 24V, VGS = 10V ƒ P-Channel ID = -1.8A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, ID = 2.4A, RG = 6.0Ω, RD = 6.2Ω ƒ P-Channel VDD = -15V, ID = -1.8A, RG = 6.0Ω, RD = 8.2Ω N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz ƒ P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz N-Ch P-Ch IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 2.4A, di/dt = 100A/µs P-Channel ƒ TJ = 25°C, IF = -1.8A, di/dt = -100A/µs ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 10sec.

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IRF7379 www.irf.com 3 Fig 3. Typical Transfer Characteristics Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage N-Channel 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D rain-to-Source Voltage (V)D S VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 20µs P ULS E W IDTH T = 25°C A 4.5V J 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D ra in-to-Source Voltage (V )D S VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 20µs P U LSE W ID TH T = 150°C A 4 .5V J 10 100 4 5 6 7 8 9 10 T = 2 5°C T = 1 5 0 °C J J G SV , G a te -to -S ource V olta ge (V ) DI , D ra in -t o -S o u rc e C u rr e n t (A ) A V = 15 V 20 µs P U L S E W ID T H D S 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 T = 25°C T = 150°C J J V = 0V G S V , Source-to-D ra in V oltage (V ) I , R e v e rs e D ra in C u rr e n t (A ) S D S D A

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IRF7379 4 www.irf.com 2 4 6 8 10 0.00 0.04 0.08 0.12 0.16 0.20 R , D ra in -t o -S o u rc e O n R e s is ta n c e I , Drain Current (A)D D S ( o n ) VGS = 10V VGS = 4.5V Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current Fig 7. Typical On-Resistance Vs. Gate Voltage N-Channel 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JT , Junction Temperature (°C ) R , D ra in -t o -S o u rc e O n R e s is ta n c e D S (o n ) (N o rm a li z e d ) V = 10V G S A I = 4.0AD ( Ω ) 0 4 8 12 16 0.03 0.04 0.05 0.06 0.07 0.08 R , D ra in -t o -S o u rc e O n R e s is ta n c e V , Gate-to-Source Voltage (V)GS D S ( o n ) ID = 5.8A ( Ω )

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IRF7379 www.irf.com 5 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage N-Channel 0 200 400 600 800 1000 1 10 100 C , C a p a c it a n c e ( p F ) D SV , D ra in-to -Source V oltage (V ) A V = 0V , f = 1M H z C = C + C , C S H O R TE D C = C C = C + C G S iss gs gd ds rss gd oss ds gd C is s C o s s C rs s 0 4 8 12 16 20 0 5 10 15 20 25 Q , Tota l G ate C harge (nC )G V , G a te -t o -S o u rc e V o lt a g e ( V ) G S A I = 2 .4A V = 24V D D S FO R TE S T C IR C U IT S E E FIG U R E 11 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J A 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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IRF7379 6 www.irf.com Fig 13. Typical Transfer Characteristics Fig 12. Typical Output CharacteristicsFig 11. Typical Output Characteristics Fig 14. Typical Source-Drain Diode Forward Voltage P-Channel 1 10 100 0.1 1 10 100 D D S A -I , D ra in -t o -S o u rc e C u rr e n t (A ) -V , D ra in-to-Source Vo ltage (V) VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -4 .5V 20µs P U LS E W ID TH T = 25°CJ 1 10 100 0.1 1 10 100 D D S 20µs P ULS E W IDTH T = 150°C A -I , D ra in -t o -S o u rc e C u rr e n t (A ) -V , D rain-to-Source Voltage (V) VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -4 .5V J 1 10 100 4 5 6 7 8 9 10 T = 2 5 °C T = 15 0°C J J G S D A -I , D ra in -t o -S o u rc e C u rr e n t (A ) -V , G a te -to -S o urce V o lta g e (V ) V = -15 V 2 0µ s P U LS E W ID T H DS 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 T = 2 5 °C T = 15 0 °C J J V = 0 V G S S D S D A -I , R e v e rs e D ra in C u rr e n t (A ) -V , Sou rce -to-D ra in Vo ltage (V )

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IRF7379 www.irf.com 7 Fig 15. Normalized On-Resistance Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain Current Fig 17. Typical On-Resistance Vs. Gate Voltage P-Channel 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JT , Junction Tem perature (°C ) R , D ra in -t o -S o u rc e O n R e s is ta n c e D S (o n ) (N o rm a li z e d ) A V = -1 0V G S I = -3 .0 AD 0 2 4 6 8 10 12 14 0.00 0.10 0.20 0.30 0.40 0.50 R , D ra in -t o -S o u rc e O n R e s is ta n c e -I , Drain Current (A)D D S ( o n ) VGS = -4.5V VGS = -10V 0 4 8 12 16 0.06 0.08 0.10 0.12 0.14 0.16 R , D ra in -t o -S o u rc e O n R e s is ta n c e -V , Gate-to-Source Voltage (V)GS D S ( o n ) ID = -4.3A ( Ω ) ( Ω )

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IRF7379 8 www.irf.com Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage P-Channel Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - 0 200 400 600 800 1000 1 10 100 C , C a p a c it a n c e ( p F ) A D S-V , D ra in -to -S ource V oltage (V ) V = 0V , f = 1M H z C = C + C , C S H O R TE D C = C C = C + C G S iss gs gd ds rss gd oss ds gd C iss C oss C rss 0 4 8 12 16 20 0 5 10 15 20 25 Q , Tota l G ate C harge (nC )G A -V , G a te -t o -S o u rc e V o lt a g e ( V ) G S I = -3 .0A V = -24VD S D FO R TE S T C IR C U IT S E E FIG U R E 22 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J A 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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IRF7379 www.irf.com 9 Package Outline SO8 Outline SO8 Part Marking Information E XA M P LE : TH IS IS A N IR F 7 10 1 D A TE C O D E (YW W ) Y = L A S T D IG IT O F TH E YE A R W W = W E E K W A F E R LO T C O D E (LA S T 4 D IG ITS ) XXXX B O TTO M P A R T N U M B E R TO P IN TE R N A TIO N A L R E C TIF IE R L O G O F 7 10 1 31 2 K x 45° C 8X L 8X θ H 0.25 (.010) M A M A 0.10 ( .004) B 8X 0.25 (.010) M C A S B S - C - 6X e - B - D E - A - 8 7 6 5 1 2 3 4 5 6 5 R E C O M M E N D E D F O O T P R I N T 0.72 ( .028 ) 8X 1.78 ( .070) 8X 6.46 ( .255 ) 1.27 ( .050 ) 3X DIM INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 θ 0° 8° 0° 8° NOTES: 1 . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 . CONTROLLING DIMENSION : INCH. 3 . DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES). 4 . OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. D IMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 ( .006) . D IMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. . 5 6 A1 e1

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Bren*****helps

August 19, 2020

Sure appreciate your quality, expertise and professional service. Thank you so much!!!

Franc*****Murty

August 18, 2020

Tested one of them and works good.

Isab*****Potts

August 11, 2020

I recommend this and would definitely buy it again.

Drak*****rnik

August 10, 2020

I took the chance and used it and I worked fine for me.

Ian*****rrior

August 2, 2020

Fantastic quality products with fair and prompt shipping. Would save much time crossing all the features. Thank you for all your effort.

Ale*****Huang

July 29, 2020

Every time I order, I always get faster than promised. For a small-time operator like me, you guys are the best!

Ram***** Kemp

July 18, 2020

I got a very helpful customer service here. Definitely will order my electronics needs again.

Maximi*****Frazier

July 18, 2020

Good service, and great value for money I am pleased with the item of IRF7379TR.

Mali*****Kota

July 11, 2020

It fit exactly in the same location as the original. Works great and no problem. Good purchase.

Jax*****Bates

July 7, 2020

Received the parts, and all parts are in tight packaging without any problems, professional seller.

IRF7379TR Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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