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IRF7465

hot IRF7465

IRF7465

For Reference Only

Part Number IRF7465
Manufacturer Infineon Technologies
Description MOSFET N-CH 150V 1.9A 8-SOIC
Datasheet IRF7465 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4000 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Feb 25 - Mar 1 (Choose Expedited Shipping)
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IRF7465

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IRF7465 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF7465 Datasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25��C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs280 mOhm @ 1.14A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

IRF7465 Datasheet

Page 1

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www.irf.com 1 2/8/01 IRF7465 SMPS MOSFET HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.5 A IDM Pulsed Drain Current  15 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt  7.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through  are on page 8 SO-8T op V iew 81 2 3 4 5 6 7 D D D DG S A S S A VDSS RDS(on) max ID 150V 0.28Ω @VGS = 10V 1.9A Symbol Parameter Typ. Max. Units Rθ JL Junction-to-Drain Lead ––– 20 Rθ JA Junction-to-Ambient  ––– 50 °C/W Thermal Resistance  High frequency DC-DC converters Benefits Applications  Low Gate to Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)  Fully Characterized Avalanche Voltage and Current PD-93896

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IRF7465 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 0.75 ––– ––– S VDS = 50V, ID = 1.14A Qg Total Gate Charge ––– 10 15 ID = 1.14A Qgs Gate-to-Source Charge ––– 2.7 4.0 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 5.0 7.5 VGS = 10V td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 75V tr Rise Time ––– 1.2 ––– ID = 1.14A td(off) Turn-Off Delay Time ––– 10 ––– RG = 6.0Ω tf Fall Time ––– 9.0 ––– VGS = 10V Ciss Input Capacitance ––– 330 ––– VGS = 0V Coss Output Capacitance ––– 80 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 16 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 420 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 41 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 76 ––– VGS = 0V, VDS = 0V to 120V  Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 40 mJ IAR Avalanche Current ––– 1.9 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 1.14A, VGS = 0V trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = 1.14A Qrr Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs Diode Characteristics 2.3 15 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆ V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA  RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.28 Ω VGS = 10V, ID = 1.14A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current

Page 4

IRF7465 www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 6.0V 20µs PULSE WIDTH Tj = 25°C VGS TOP 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 6.0V 20µs PULSE WIDTH Tj = 150°C VGS TOP 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 0.1 1 10 100 6.0 7.0 8.0 9.0 10.0  V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) GS D  T = 150 CJ °  T = 25 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) R , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) J D S (o n ) °   V = I = GS D 10V 1.9A

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IRF7465 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 C , C a p a c it a n c e (p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 4 8 12 16 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , G a te -t o -S o u rc e V o lt a g e ( V ) G G S  I =D 1.14A V = 30VDS V = 75VDS V = 120VDS 0.1 1 10 100 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) I , R e v e rs e D ra in C u rr e n t (A ) SD S D  V = 0 V GS  T = 25 CJ °  T = 150 CJ ° 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) TA = 25°C TJ = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec

Page 6

IRF7465 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 10V + -VDD Fig 9. Maximum Drain Current Vs. Ambient Temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10  Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A  P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J A 0.01 0.02 0.05 0.10 0.20 D = 0.50  SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 T , Case Temperature ( C) I , D ra in C u rr e n t (A ) ° C D

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IRF7465 6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 14a&b. Basic Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µ F 50KΩ .2µ F12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VGS QG QGS QGD VG Charge tp V (B R )D S S I A S R G IA S 0.01 Ωtp D .U .T LVD S + - VD D DRIVE R A 15 V 20V 0 4 8 12 16 ID , Drain Current (A) 0.20 0.24 0.28 0.32 0.36 0.40 R D S ( o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω ) VGS = 10V 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0.20 0.25 0.30 0.35 0.40 0.45 0.50 R D S (o n ), D ra in -t o - S o u rc e O n R e s is ta n c e ( Ω ) ID = 1.14A 25 50 75 100 125 150 0 20 40 60 80 100 Starting T , Junction Temperature ( C) E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) J A S °  ID TOP BOTTOM 0.8A 1.5A 1.9A

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IRF7465 www.irf.com 7 SO-8 Package Details K x 4 5 ° C 8 X L 8 X θ H 0 .2 5 ( .0 1 0 ) M A M A 0 .1 0 (.0 0 4 ) B 8 X 0 .2 5 ( .0 1 0 ) M C A S B S - C - 6 X e - B - D E - A - 8 7 6 5 1 2 3 4 5 6 5 R E C O M M E N D E D F O O T P R IN T 0 .7 2 ( .0 2 8 ) 8 X 1 .7 8 ( .0 7 0 ) 8 X 6 .4 6 ( .2 5 5 ) 1 .2 7 ( .0 5 0 ) 3 X D IM IN C H ES M ILLIM E T ER S M IN M AX M IN M AX A .05 32 .06 88 1 .3 5 1 .75 A1 .00 40 .00 98 0 .1 0 0 .25 B .01 4 .01 8 0 .3 6 0 .46 C .00 75 .009 8 0 .19 0 .25 D .18 9 .196 4 .80 4 .98 E .15 0 .15 7 3 .8 1 3 .99 e .05 0 B ASIC 1 .27 BA SIC e1 .02 5 B ASIC 0 .635 BA SIC H .22 84 .244 0 5 .8 0 6 .20 K .01 1 .01 9 0 .2 8 0 .48 L 0 .16 .05 0 0 .4 1 1 .27 θ 0° 8° 0° 8 ° N O T E S : 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ) . 4 . O U TL IN E C O N F O R M S TO J E D E C O U TL IN E M S -0 1 2 A A . D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S M O L D P R O T R U S IO N S N O T TO E XC E E D 0 .2 5 (.0 0 6 ). D IM E N S IO N S IS TH E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE .. 5 6 A 1 e 1 θ SO-8 Part Marking

IRF7465 Reviews

Average User Rating
5 / 5 (114)
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5 ★
103
4 ★
11
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Har*****Cross

December 21, 2019

Wow super fast delivery, product as described good company!

Alia*****athis

October 9, 2019

Heisener parametric search for specific components is by far better than their competitors.

Kath*****Virk

September 4, 2019

I can find what I want, and also trust I'm getting what I paid for. Many times I had to send things back or eat the cost dealing shady sellers, either way it cost me.

Sai*****Bobal

July 28, 2019

Excellent safe and secure packing. Fast ship out. Thanks

Tatu*****yers

July 27, 2019

Fast shipping. Got it in few dayss from Hong Kong

Avi *****rwood

February 9, 2019

Received Quickly. Excellent Communication. Capacitors Look Excellent

Kash*****Farmer

November 23, 2018

Works as expected. Fits good in circuit board, not lose or slipping around.

Will*****afford

November 22, 2018

I always have good experiences in dealing with Heisener Electronics. They have the components I need in stock, their search function is great, and shipping is fast and always as promised.

Ste***** Tata

August 7, 2018

good item, quick delivery, prefer to recommended.

Kaiy*****haefer

June 14, 2018

I enjoy Good service from Heisener team , I can get good quality components what I want in heisener.com.

IRF7465 Guarantees

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