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IRF7470PBF

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IRF7470PBF

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Part Number IRF7470PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 10A 8-SOIC
Datasheet IRF7470PBF Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 369 piece(s)
Unit Price $ 0.6912 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # IRF7470PBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF7470PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF7470PBFDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds3430pF @ 20V
Vgs (Max)��12V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs13 mOhm @ 10A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

IRF7470PBF Datasheet

Page 1

Page 2

www.irf.com 1  IRF7470PbFSMPS MOSFET HEXFETPower MOSFET VDSS RDS(on) max ID 40V 13mΩ 10A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient  ––– 50 °C/W Thermal Resistance Notes through  are on page 8 SO-8 Top View 81 2 3 4 5 6 7 D D D DG S A S S A  Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 40 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A IDM Pulsed Drain Current 85 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C  High Frequency DC-DC Converters with Synchronous Rectification  Lead-Free Applications Benefits  Ultra-Low Gate Impedance  Very Low RDS(on) at 4.5V VGS  Fully Characterized Avalanche Voltage and Current

Page 3

IRF7470PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. ––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 8.0A, VR= 20V Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 76 110 ns TJ = 125°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs S D G Diode Characteristics 2.3 85  VSD Diode Forward Voltage Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 300 mJ IAR Avalanche Current ––– 8.0 A Avalanche Characteristics Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.0 13 VGS = 10V, ID = 10A ––– 10 15 mΩ VGS = 4.5V, ID = 8.0A ––– 14.5 30 VGS = 2.8V, ID = 5.0A VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 32V, VGS = 0V ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A Qg Total Gate Charge ––– 29 44 ID = 8.0A Qgs Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = 4.5V  Qoss Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 10 ––– VDD = 20V tr Rise Time ––– 1.9 ––– ID = 8.0A td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω tf Fall Time ––– 3.2 ––– VGS = 4.5V  Ciss Input Capacitance ––– 3430 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– VDS = 20V Crss Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz

Page 4

IRF7470PbF www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V 2.0V V , Drain-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) DS D 2.0V 1 10 100 0.1 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V 2.0V V , Drain-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) DS D 2.0V 1 10 100 2.0 2.2 2.4 2.6 2.8 3.0 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) GS D T = 25 CJ ° T = 150 CJ ° Fig 4. Normalized On-Resistance Vs. Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) R , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) J D S (o n ) ° V = I = GS D 10V 10A

Page 5

IRF7470PbF 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0 10 20 30 40 50 60 0 2 4 6 8 10 Q , Total Gate Charge (nC) V , G a te -t o -S o u rc e V o lt a g e ( V ) G G S I =D 8.0A V = 20VDS V = 32VDS Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 V ,Source-to-Drain Voltage (V) I , R e v e rs e D ra in C u rr e n t (A ) SD S D V = 0 V GS T = 25 CJ ° T = 150 CJ ° 1 10 100 1000 0.1 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° °J A V , Drain-to-Source Voltage (V) I , D ra in C u rr e n t (A ) I , D ra in C u rr e n t (A ) DS D 10us 100us 1ms 10ms Fig 8. Maximum Safe Operating Area 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C a p a c it a n c e (p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd

Page 6

IRF7470PbF www.irf.com 5 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJA A P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J A 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig 6. On-Resistance Vs. Drain Current Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms   ≤ 1    ≤ 0.1 %     + - 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 T , Case Temperature ( C) I , D ra in C u rr e n t (A ) °C D

Page 7

IRF7470PbF 6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 13a&b. Basic Gate Charge Test Circuit and Waveform Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + -  QG QGS QGD VG Charge tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 25 50 75 100 125 150 0 200 400 600 800 Starting T , Junction Temperature ( C) E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) J A S ° ID TOP BOTTOM 3.6A 6.4A 8.0A 0 10 20 30 40 50 60 ID , Drain Current (A) 0.010 0.015 0.020 0.025 0.030 R D S ( o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω ) VGS = 4.5V VGS = 2.7V VGS = 10V 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0.010 0.012 0.014 0.016 0.018 0.020 R D S (o n ), D ra in -t o - S o u rc e O n R e s is ta n c e ( Ω ) ID = 10A

Page 8

IRF7470PbF www.irf.com 7 SO-8 Package Outline Dimensions are shown in millimeters (inches) SO-8 Part Marking e 1 D E y b A A1 H K L .189 .1497 0° .013 .050 BASIC .0532 .0040 .2284 .0099 .016 .1968 .1574 8° .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0° 1.27 BASIC 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX MILLIMETERSINCHES MIN MAX DIM 8° e c .0075 .0098 0.19 0.25 .025 BASIC 0.635 BASIC 8 7 5 6 5 D B E A e6X H 0.25 [.010] A 6 7 K x 45° 8X L 8X c y 0.25 [.010] C A B e1 A A18X b C 0.10 [.004] 431 2 FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. NOTES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 8X 1.78 [.070] DATE CODE (YWW) XXXX INTERNATIONAL RECTIFIER LOGO F7101 Y = LAST DIGIT OF THE YEAR PART NUMBER LOT CODE WW = WEEK EXAMPLE: THIS IS AN IRF7101 (MOSFET) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) A = ASSEMBLY S ITE CODE

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