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IRF8852TRPBF

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IRF8852TRPBF

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Part Number IRF8852TRPBF
Manufacturer Infineon Technologies
Description MOSFET 2N-CH 25V 7.8A 8TSSOP
Datasheet IRF8852TRPBF Datasheet
Package 8-TSSOP (0.173", 4.40mm Width)
In Stock 942 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # IRF8852TRPBF (Transistors - FETs, MOSFETs - Arrays) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF8852TRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet IRF8852TRPBFDatasheet
Package8-TSSOP (0.173", 4.40mm Width)
SeriesHEXFET?
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C7.8A
Rds On (Max) @ Id, Vgs11.3 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1151pF @ 20V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

IRF8852TRPBF Datasheet

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www.irf.com 1 07/30/09 IRF8852PbF HEXFETPower MOSFET Notes through  are on page 10  TSSOP-8 Description  Ultra Low On-Resistance  Dual N-Channel MOSFET  Very Small SOIC Package  Low Profile (< 1.1mm)  Available in Tape & Reel  Lead-Free HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.            VDSS RDS(on) max Id 11.3m@VGS = 10V 7.8A 15.4m@VGS = 4.5V 6.2A 25V ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation  PD @TA = 70°C Power Dissipation  Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead  ––– 53 RθJA Junction-to-Ambient  ––– 125 °C/W W °C A -55 to + 150 1.0 0.01 0.64 ± 20 Max. 7.8 6.2 62.4 25

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 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 9.2 11.3 ––– 12.5 15.4 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 19 ––– ––– S Qg Total Gate Charge ––– 9.5 ––– nC Qg Total Gate Charge ––– 17.4 26.1 Qgs Gate-to-Source Charge ––– 3.1 ––– Qgd Gate-to-Drain Charge ––– 2.9 ––– RG Gate Resistance ––– 2.8 ––– Ω td(on) Turn-On Delay Time ––– 11.4 ––– tr Rise Time ––– 10.9 ––– td(off) Turn-Off Delay Time ––– 70.8 ––– tf Fall Time ––– 28.9 ––– Ciss Input Capacitance ––– 1151 ––– Coss Output Capacitance ––– 295 ––– Crss Reverse Transfer Capacitance ––– 134 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current  A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 17 26 nC mΩ A pF ns nC ––– 62.4 ––– ––– ––– ––– Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.8A  VDD = 13V, VGS = 10V  ID = 1.0A VGS = 20V VGS = -20V ID = 7.8A VDS = 20V, VGS = 0V VGS = 10V di/dt = 100A/µs  TJ = 25°C, IS = 1.3A, VGS = 0V  showing the integral reverse p-n junction diode. VDS = 20V, VGS = 0V, TJ = 70°C nA µA TJ = 25°C, IF = 1.3A, VDD = 20V ƒ = 1.0MHz ID = 7.8A,VDS= 13V, VGS = 4.5V 1.3 MOSFET symbol Conditions VGS = 4.5V, ID = 6.2A  VDS = 13V Typ. ––– VDS = VGS, ID = 25µA RD =13 Ω VDS = 10V, ID = 7.8A RG =30 Ω Max. 6.5 7.8 VGS = 0V VDS = 20V

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 www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 8.0V 6.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V ≤60µs PULSE WIDTH Tj = 25°C 2.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.5V ≤60µs PULSE WIDTH Tj = 150°C VGS TOP 10V 8.0V 6.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 150°C VDS = 15V ≤60µs PULSE WIDTH Fig 4. Normalized On-Resistance vs. Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 7.8A VGS = 10V

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 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss Fig 7. Typical Source-Drain Diode Forward Voltage 0 4 8 12 16 20 24 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 20V VDS= 13V ID= 7.8A 0 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY R DS(on) TA = 25°C Tj = 150°C Single Pulse 100µsec 1msec 10msec 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 150°C VGS = 0V

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 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Typical On-Resistance Vs. Gate Voltage 25 50 75 100 125 150 TA , Ambient Temperature (°C) 0 1 2 3 4 5 6 7 8 9 I D , D ra in C ur re nt ( A ) 2 4 6 8 10 VGS, Gate -to -Source Voltage (V) 5 10 15 20 25 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m Ω ) ID = 7.8A TJ = 25°C TJ = 125°C 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) 0.01 0.1 1 10 100 1000 T he rm al R es po ns e ( Z th JA ) °C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA Ri (°C/W) τi (sec) 2.65337 0.00011 18.2380 0.027128 74.5829 0.64107 29.5446 11.11

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 6 www.irf.com Fig 12. Typical On-Resistance vs. Drain Current Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 15. Maximum Avalanche Energy vs. Drain CurrentFig 14. Typical Power Vs. Time 0 10 20 30 40 50 60 70 ID, Drain Current (A) 8 10 12 14 16 18 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m Ω ) Vgs = 10V Vgs = 4.5V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.5 1.0 1.5 2.0 2.5 V G S (t h) , G at e T hr es ho ld V ol ta ge ( V ) ID = 250µA ID = 25µA 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 5 10 15 20 25 30 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 2.7A 3.2A BOTTOM 7.8A 0.001 0.01 0.10 1 10 100 Time (sec) 0 5 10 15 20 25 30 35 40 45 P ow er ( W )

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 www.irf.com 7 Fig 17. Gate Charge Test Circuit 1K VCC DUT 0 L S 20 Fig 17. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1Qgs2QgdQgodr Fig 18b. Switching Time WaveformsFig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf   ≤ 1    ≤ 0.1 %      + - Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V

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 8 www.irf.com Note: For the most current drawing please refer to IR website at http://www.irf.com/package/                                                                                                       !!!   " " ""                    TSSOP8 Package Outline Dimensions are shown in milimeters (inches)                                                                      !  "                                         

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 www.irf.com 9         TSSOP-8 Tape and Reel Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/                                     !"#    

IRF8852TRPBF Reviews

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Son*****Simon

July 4, 2020

Have never had a problem with my order. Packages arrive on time and in great condition.

Gide*****illis

June 27, 2020

Does what it says. As with this this type of device it is important to have it mounted so that heat can dissipate. The higher the amperage the hotter the device.

Timot*****llespie

June 18, 2020

I am satisfied with Heisener company

Dani*****cguire

June 15, 2020

Components all tested within limits of specifications. Components came packaged in an easy to identify resealable bag and will work well for my projects.

Saig*****rawal

June 12, 2020

I have never been experienced anything wrong with my order, the logistic has always get out the same day, and the items are always well packaged.

Mar*****Eaton

June 11, 2020

Purchased this in May and didn't use it until last week. worked and all was good.

Eri*****arin

June 11, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

Malco*****ickson

June 6, 2020

The items I want are often in stock and available in small quantities.

Maximil*****rvantes

June 1, 2020

Heisener has everything! Each product is easy to search and navigate. No minimum quantities. Fast shipping!

Lege*****atti

May 31, 2020

Fantastic transaction, very fast delivery. Highly recommended. Thank you.

IRF8852TRPBF Guarantees

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