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IRFH5210TRPBF

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IRFH5210TRPBF

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Part Number IRFH5210TRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 10A 8-PQFN
Datasheet IRFH5210TRPBF Datasheet
Package 8-PowerVDFN
In Stock 26,926 piece(s)
Unit Price $ 0.7022 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
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Part Number # IRFH5210TRPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFH5210TRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFH5210TRPBFDatasheet
Package8-PowerVDFN
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2570pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs14.9 mOhm @ 33A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerVDFN

IRFH5210TRPBF Datasheet

Page 1

Page 2

HEXFETPower MOSFET Notes through  are on page 9 Features and Benefits Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters PQFN 5X6 mm Features Benefits Low RDSon (≤ 14.9mΩ at Vgs = 10V) Lower Conduction Losses Low Thermal Resistance to PCB (≤ 1.2°C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile (≤ 0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation  PD @ TC(Bottom) = 25°C Power Dissipation  Linear Derating Factor  W/°C TJ Operating Junction and TSTG Storage Temperature Range -55 to + 150 3.6 0.029 104 Max. 10 35 220 ±20 100 8.1 55 V W A °C VDS 100 V RDS(on) max (@VGS = 10V) 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω ID (@Tc(Bottom) = 25°C) 55 A             !"  Note Form Quantity IRFH5210TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5210TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice #259 Orderable part number Package Type Standard Pack

Page 3

            !"  S D G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case ––– 1.2 RθJC (Top) Junction-to-Case ––– 15 °C/W RθJA Junction-to-Ambient  ––– 35 RθJA (<10s) Junction-to-Ambient  ––– 22 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12.6 14.9 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -9.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 66 ––– ––– S Qg Total Gate Charge ––– 40 60 Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.2 ––– Qgd Gate-to-Drain Charge ––– 11 ––– Qgodr Gate Charge Overdrive ––– 18.4 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 14.2 ––– Qoss Output Charge ––– 11 ––– nC RG Gate Resistance ––– 1.7 ––– Ω td(on) Turn-On Delay Time ––– 7.2 ––– tr Rise Time ––– 9.7 ––– td(off) Turn-Off Delay Time ––– 21 ––– tf Fall Time ––– 6.5 ––– Ciss Input Capacitance ––– 2570 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 100 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current  A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode)  ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 29 44 ns Qrr Reverse Recovery Charge ––– 165 250 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VGS = 10V Typ. ––– RG=1.65Ω VDS = 50V, ID = 33A VDS = 100V, VGS = 0V, TJ = 125°C mΩ μA ID = 33A TJ = 25°C, IF = 33A, VDD = 50V di/dt = 500A/μs  TJ = 25°C, IS = 33A, VGS = 0V  showing the integral reverse p-n junction diode. VGS = 20V VGS = -20V VDS = 100V, VGS = 0V MOSFET symbol VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V ID = 33A VGS = 0V VDS = 25V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 33A  pF nC Conditions See Fig.15 Max. 86 33 ƒ = 1.0MHz VDS = 50V ––– VDS = VGS, ID = 100μA A 55 ––– ––– 220 ––– ––– nA ns

Page 4

  #          !"  Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V ≤60μs PULSE WIDTH Tj = 25°C 3.8V 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 3.8V ≤60μs PULSE WIDTH Tj = 150°C VGS TOP 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V 2 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) 1.0 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 150°C VDS = 50V ≤60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 33A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 80V VDS= 50V VDS= 20V ID= 33A

Page 5

  $          !"  Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Threshold Voltage vs. Temperature 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 150°C VGS = 0V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V G S (t h) , G at e th re sh ol d V ol ta ge ( V ) ID = 100μA ID = 250μA ID = 1.0mA ID = 1.0A 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 T he rm al R es po ns e ( Z th JC ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY R DS(on) Tc = 25°C Tj = 150°C Single Pulse 100μsec 1msec 10msec DC 25 50 75 100 125 150 TC , Case Temperature (°C) 0 10 20 30 40 50 60 I D , D ra in C ur re nt ( A )

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            !"  Fig 13. Maximum Avalanche Energy vs. Drain CurrentFig 12. On-Resistance vs. Gate Voltage Fig 14b. Unclamped Inductive WaveformsFig 14a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms VGS VDS 90% 10% td(on) td(off)tr tf    ≤ 1      ≤ 0.1       + -  2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 5 10 15 20 25 30 35 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m Ω ) ID = 33A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 100 200 300 400 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 3.4A 8.6A BOTTOM 33A

Page 7

  !          !"  Fig 16.       for N-Channel HEXFETPower MOSFETs Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr       •       •   •         P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period         + - + + +- - -     • !"   # $ •  !   %  &'&& •    #     (( • &'&& ) !  '     1K VCC DUT 0 L S

Page 8

  %          !"  XXXX XYWWX XXXXX INTERNATIONAL RECTIFIER LOGO PART NUMBER MARKING CODE (Per Marking Spec) ASSEMBLY SITE CODE (Per SCOP 200-002) DATE CODE PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Outline "B" Package Details PQFN 5x6 Part Marking         !    !    !!  "#$%&' (!'))*** )($ )!!)$%&!      !+ ! (, !    !!  "#$ -' (!'))*** )($ )!!)$ -! & '   ()  ')'**  *) (*

Page 9

  +          !"  PQFN 5x6 Tape and Reel Bo W P 1 Ao Ko CODE TAPE DIMENSIONSREEL DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Pitch between successive cavity centers Overall width of the carrier tape DESCRIPTION Type Package 5 X 6 PQFN Note: All dimens ion are nominal Diameter Reel QTY Width Reel (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W Quadrant Pin 1 (Inch) W1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRFH5210TRPBF Reviews

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Yah*****Chan

May 17, 2020

Pleased with this purchase, good, quick service and item exactly as shown.

Char*****Jaggi

May 12, 2020

Easier, quicker and cheaper to buy this whole assortment than to get just the few I needed from an electronics store.

Dange*****minguez

May 11, 2020

I can count on your provision for BOM of my design in near future

Ayle*****ranco

May 8, 2020

Thousands of in stock parts with low cost shipping and standard quality.

Kole*****pathi

May 6, 2020

Excellent, high quality product at a reasonable price. Timely delivery. Highly recommend product and vendor.

Cal*****Ryan

May 5, 2020

These little guys worked perfect for my wiring project. Reliable, good quality.

Ash*****n Ray

April 30, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent

Aria*****hmukh

April 25, 2020

Very effective shopping path, service steady as a rock, keep up the great work.

Cora*****togi

April 24, 2020

Good quality, buy back and then use, with the newly bought hard disk, very stable, at any time you can check things, not occupy space, very convenient.

Orland*****astava

April 6, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

IRFH5210TRPBF Guarantees

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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