IRFH8325TRPBF

Page 1

Page 2

HEXFETPower MOSFET Notes through  are on page 9 Features and Benefits Applications • Synchronous MOSFET for high frequency buck converters PQFN 5X6 mm VDS 30 V Vgs max ± 20 V RDS(on) max (@VGS = 10V) 5.0 (@VGS = 4.5V) 7.2 Qg typ 15 nC ID (@Tc(Bottom) = 25°C) 25 A mΩ Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation  PD @TC(Bottom) = 25°C Power Dissipation  Linear Derating Factor  W/°C TJ Operating Junction and TSTG Storage Temperature Range V W A °C Max. 21 52 100 ± 20 30 17 82 25 -55 to + 150 3.6 0.029 54 Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability           !  Form Quantity IRFH8325TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8325TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice # 259 Base part number Package Type Standard Pack Note

Page 3

        !    Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case ––– 2.3 RθJC (Top) Junction-to-Case ––– 34 °C/W RθJA Junction-to-Ambient  ––– 35 RθJA (<10s) Junction-to-Ambient  ––– 22 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.1 5.0 ––– 6.0 7.2 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 74 ––– ––– S Qg Total Gate Charge ––– 32 ––– nC Qg Total Gate Charge ––– 15 ––– Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.5 ––– Qgd Gate-to-Drain Charge ––– 4.2 ––– Qgodr Gate Charge Overdrive ––– 4.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 5.7 ––– Qoss Output Charge ––– 11 ––– nC RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 16 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 7.1 ––– Ciss Input Capacitance ––– 2487 ––– Coss Output Capacitance ––– 503 ––– Crss Reverse Transfer Capacitance ––– 204 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current  A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 25 38 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 15V ––– VGS = 20V VGS = -20V ––– ––– 100 ––– ––– 25 Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A  Conditions Max. 94 20 ƒ = 1.0MHz TJ = 25°C, IF = 20A, VDD = 15V di/dt = 380A/μs  TJ = 25°C, IS = 20A, VGS = 0V  showing the integral reverse p-n junction diode. Typ. ––– RG=1.8Ω VDS = 10V, ID = 20A ID = 20A ID = 20A VGS = 0V VDS = 10V VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V VDS = VGS, ID = 50μA μA VGS = 4.5V, ID = 16A  VGS = 4.5V VDS = 24V, VGS = 0V, TJ = 125°C mΩ VDS = 24V, VGS = 0V VGS = 10V, VDS = 15V, ID = 20A

Page 4

        !    Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 4. Normalized On-Resistance vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V BOTTOM 2.50V ≤60μs PULSE WIDTH Tj = 25°C 2.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) ≤60μs PULSE WIDTH Tj = 150°C 2.5V VGS TOP 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V BOTTOM 2.50V 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 150°C VDS = 15V ≤60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 20A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 10 20 30 40 50 QG, Total Gate Charge (nC) 0 2 4 6 8 10 12 14 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 24V VDS= 15V VDS= 6V ID= 20A

Page 5

"        !    Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Threshold Voltage vs. Temperature -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V G S (t h) , G at e th re sh ol d V ol ta ge ( V ) ID = 50μA ID = 250μA ID = 1.0mA ID = 1.0A 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 T he rm al R es po ns e ( Z th JC ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 150°C VGS = 0V 25 50 75 100 125 150 TC , Case Temperature (°C) 0 25 50 75 100 I D , D ra in C ur re nt ( A ) Limited By Source Bonding Technology 0.10 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 150°C Single Pulse 100μsec 1msec 10msec DCLimited by Source Bonding Technology

Page 6

#        !    Fig 13. Maximum Avalanche Energy vs. Drain CurrentFig 12. On-Resistance vs. Gate Voltage Fig 14b. Unclamped Inductive WaveformsFig 14a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms VGS VDS 90% 10% td(on) td(off)tr tf     ≤ 1      ≤ 0.1       + -  0 5 10 15 20 VGS, Gate -to -Source Voltage (V) 1 3 5 7 9 11 13 15 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m Ω ) ID = 20A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 50 100 150 200 250 300 350 400 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 4.9A 9.4A BOTTOM 20A

Page 7

        !    Fig 16.     for N-Channel HEXFETPower MOSFETs Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr     •      •   •        P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period          + - + + +- - -     • !"   # $ • !   %  &'&& •    #     (( • &'&& ) ! '    1K VCC DUT 0 L S

Page 8

$        !    PQFN 5x6 Outline "E" Package Details                     http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ PQFN 5x6 Outline "E" Part Marking XXXX XYWWX XXXXX INTERNATIONAL RECTIFIER LOGO PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) ASSEMBLY SITE CODE (Per SCOP 200-002) DATE CODE PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code)

Page 9

%        !    PQFN 5x6 Outline "E" Tape and Reel REEL DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. STANDARD OPTION (QTY 4000) MIN 329.5 20.9 12.8 1.7 97 Ref 13 CODE A B C D E F G MAX 330.5 21.5 13.5 2.3 99 17.4 14.5 MIN 12.972 0.823 0.504 0.067 3.819 0.512 MAX 13.011 0.846 0.532 0.091 3.898 0.571 METRIC IMPERIAL TR1 OPTION (QTY 400) IMPERIAL MIN 6.988 0.823 0.520 0.075 2.350 0.512 MAX 178.5 21.5 13.8 2.3 66 12 14.5 MIN 177.5 20.9 13.2 1.9 65 Ref 13 METRIC MAX 7.028 0.846 0.543 0.091 2.598 0.571 $*