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IRFIB6N60A

hot IRFIB6N60A

IRFIB6N60A

For Reference Only

Part Number IRFIB6N60A
Manufacturer Vishay Siliconix
Description MOSFET N-CH 600V 5.5A TO220FP
Datasheet IRFIB6N60A Datasheet
Package TO-220-3 Full Pack, Isolated Tab
In Stock 227
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 26 - Jul 31 (Choose Expedited Shipping)

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IRFIB6N60A

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IRFIB6N60A Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFIB6N60A Datasheet
PackageTO-220-3 Full Pack, Isolated Tab
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs750 mOhm @ 3.3A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

IRFIB6N60A Datasheet

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hotIRFIB6N60A IRFBC30 Vishay Siliconix, MOSFET N-CH 600V 3.6A TO-220AB, Package:TO-220-3, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):600V, Current - Continuous Drain (Id) @ 25°C:5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 25V, Power Dissipation (Max):60W (Tc), Rds On (Max) @ Id, Vgs:750 mOhm @ 3.3A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220-3, Package / Case:TO-220-3 Full Pack, Isolated Tab
hotIRFIB6N60A IRFR214PBF Vishay Siliconix, MOSFET N-CH 250V 2.2A DPAK, Package:TO-252-3, DPak (2 Leads + Tab), SC-63, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):600V, Current - Continuous Drain (Id) @ 25°C:5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 25V, Power Dissipation (Max):60W (Tc), Rds On (Max) @ Id, Vgs:750 mOhm @ 3.3A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220-3, Package / Case:TO-220-3 Full Pack, Isolated Tab
hotIRFIB6N60A IRF630STRLPBF Vishay Siliconix, MOSFET N-CH 200V 9A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):600V, Current - Continuous Drain (Id) @ 25°C:5.5A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 25V, Power Dissipation (Max):60W (Tc), Rds On (Max) @ Id, Vgs:750 mOhm @ 3.3A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220-3, Package / Case:TO-220-3 Full Pack, Isolated Tab

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