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IRFIB6N60A

hot IRFIB6N60A

IRFIB6N60A

For Reference Only

Part Number IRFIB6N60A
Manufacturer Vishay Siliconix
Description MOSFET N-CH 600V 5.5A TO220FP
Datasheet IRFIB6N60A Datasheet
Package TO-220-3 Full Pack, Isolated Tab
In Stock 227 piece(s)
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IRFIB6N60A

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IRFIB6N60A Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFIB6N60A Datasheet
PackageTO-220-3 Full Pack, Isolated Tab
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25��C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs750 mOhm @ 3.3A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

IRFIB6N60A Datasheet

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 1 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching • High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES • Single transistor forward • Active clamped forward Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12). c. ISD  9.2 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) () VGS = 10 V 0.75 Qg max. (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Single N-Channel MOSFET G D S SDG TO-220 FULLPAK Available Available ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIB6N60APbF SiHFIB6N60A-E3 SnPb IRFIB6N60A SiHFIB6N60A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 5.5 TC = 100 °C 3.5 Pulsed Drain Current a IDM 37 Linear Derating Factor 0.48 W/°C Single Pulse Avalanche Energy b EAS 290 mJ Repetitive Avalanche Current a IAR 9.2 A Repetitive Avalanche Energy a EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dt c dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 2 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 65 °C/W Maximum Junction-to-Case (Drain) RthJC - 2.1 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA d - 660 - mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.3 A b - - 0.75  Forward Transconductance gfs VDS = 25 V, ID = 5.5 A 5.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - pF Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 7.1 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1957 - VDS = 480 V, f = 1.0 MHz - 49 - Effective Output Capacitance Coss eff. VDS = 0 V to 480 V c - 96 - Total Gate Charge Qg VGS = 10 V ID = 9.2 A, VDS = 400 V, see fig. 6 and 13 b - - 49 nC Gate-Source Charge Qgs - - 13 Gate-Drain Charge Qgd - - 20 Turn-On Delay Time td(on) VDD = 300 V, ID = 9.2 A, RG = 9.1, RD = 35.5, see fig. 10 b - 13 - ns Rise Time tr - 25 - Turn-Off Delay Time td(off) - 30 - Fall Time tf - 22 - Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.2  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 5.5 A Pulsed Diode Forward Current a ISM - - 37 Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 V b - - 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - 530 800 ns Body Diode Reverse Recovery Charge Qrr - 3.0 4.4 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 3 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.1 1 10 100 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) DS D 4.7V 1 10 100 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) DS D 4.7V 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -t o -S o u rc e C u rr e n t (A ) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature ( C) R , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) J D S (o n ) ° V = I = GS D 10V 9.2A

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 4 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 0 400 800 1200 1600 2000 2400 1 10 100 1000 C , C a p a c it a n c e ( p F ) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , G a te -t o -S o u rc e V o lt a g e ( V ) G G S FOR TEST CIRCUIT SEE FIGURE I =D 13 9.2A V = 120VDS V = 300VDS V = 480VDS 0.1 1 10 100 0.2 0.5 0.7 1.0 1.2 V ,Source-to-Drain Voltage (V) I , R e v e rs e D ra in C u rr e n t (A ) SD S D V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 1 10 100 1000 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° °J C V , Drain-to-Source Voltage (V) I , D ra in C u rr e n t (A ) I , D ra in C u rr e n t (A ) DS D 10us 100us 1ms 10ms

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 5 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 T , Case Temperature ( C) I , D ra in C u rr e n t (A ) °C D VDS Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V + - VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (s) T h e rm a l R e s p o n s e (Z ) 1 th J C 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 6 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A R G IAS 0.01 Ωtp D.U.T. LVDS + - VDD Driver A 15 V 20 V tp VDS IAS 25 50 75 100 125 150 0 100 200 300 400 500 600 Starting T , Junction Temperature ( C) E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) J A S ° ID TOP BOTTOM 4.1A 5.8A 9.2A QG QGS QGD VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

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IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix S16-0763-Rev. D, 02-May-16 7 Document Number: 91175 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 14 - For N-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V a ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD

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