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IRFIZ48VPBF

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IRFIZ48VPBF

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Part Number IRFIZ48VPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 60V 39A TO220FP
Datasheet IRFIZ48VPBF Datasheet
Package TO-220-3 Full Pack
In Stock 12,246 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Nov 2 - Nov 7 (Choose Expedited Shipping)
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Part Number # IRFIZ48VPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFIZ48VPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFIZ48VPBFDatasheet
PackageTO-220-3 Full Pack
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1985pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)43W (Tc)
Rds On (Max) @ Id, Vgs12 mOhm @ 43A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

IRFIZ48VPBF Datasheet

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IRFIZ48VPbF HEXFET® Power MOSFET  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 39 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current  290 PD @TC = 25°C Power Dissipation 43 W Linear Derating Factor 0.29 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 72 A EAR Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt  5.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.5 °C/W RθJA Junction-to-Ambient ––– 65 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 12mΩ ID = 39A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.  Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.5KVRMS   Fast Switching  Fully Avalanche Rated  Optimized for SMPS Applications  Lead-Free Description TO-220 FULLPAK PD-94834

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IRFIZ48VPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V  trr Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = 72A Qrr Reverse Recovery Charge ––– 155 233 nC di/dt = 100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 39 290   Starting TJ = 25°C, L = 64µH RG = 25Ω, IAS = 72A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )   ISD ≤72Adi/d≤151A/µs, VDD≤V(BR)DSS, TJ ≤ 175°C  Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA  RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12.0 mΩ VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 35 ––– ––– S VDS = 25V, ID = 43A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 72A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.6 ––– VDD = 30V tr Rise Time ––– 200 ––– ID = 72A td(off) Turn-Off Delay Time ––– 157 ––– RG = 9.1Ω tf Fall Time ––– 166 ––– RD = 0.34Ω, See Fig. 10  Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1985 ––– VGS = 0V Coss Output Capacitance ––– 496 ––– VDS = 25V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Eas Single Pulse Avalanche Energy  ––– 780170 mJ IAS = 72A, L = 64mH Crss Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz, See Fig. 5   This is a typical value at device destruction and represents operation outside rated limits.  This is a calculated value limited to TJ = 175°C .  Uses IRFZ48V data and test conditions.  t = 60s, f = 60Hz

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IRFIZ48VPbF www.irf.com 3                      1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -t o- S ou rc e C ur re nt ( A ) DS D 4.5V 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -t o- S ou rc e C ur re nt ( A ) DS D 4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature ( C) R , D ra in -t o- S ou rc e O n R es is ta nc e (N or m al iz ed ) J D S (o n) ° V = I = GS D 10V 72A 1 10 100 1000 4 6 8 10 12 14 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -t o- S ou rc e C ur re nt ( A ) GS D T = 25 CJ ° T = 175 CJ °

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IRFIZ48VPbF 4 www.irf.com                 !    !       "#    $ 1 10 100 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 C , C ap ac ita nc e( pF ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 0 5 10 15 20 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e V ol ta ge ( V ) G G S I =D 72A V = 12VDS V = 30VDS V = 48VDS 1 10 100 1000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° °J C V , Drain-to-Source Voltage (V) I , D ra in C ur re nt ( A ) I , D ra in C ur re nt ( A ) DS D 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt ( A ) SD S D V = 0 V GS T = 25 CJ ° T = 175 CJ °

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IRFIZ48VPbF www.irf.com 5  "#             VDS 90% 10% VGS td(on) tr td(off) tf    %& "# ' &  ()*       ≤ 1    ≤ 0.1 %     + -  25 50 75 100 125 150 175 0 10 20 30 40 T , Case Temperature ( C) I , D ra in C ur re nt ( A ) °C D 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) T he rm al R es po ns e (Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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IRFIZ48VPbF 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - +, !       -!   %& .(  &%& .(  &    tp V(BR)DSS IAS "# $& '    RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 25 50 75 100 125 150 175 0 100 200 300 400 Starting T , Junction Temperature ( C) E , S in gl e P ul se A va la nc he E ne rg y (m J) J A S ° ID TOP BOTTOM 29A 51A 72A

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IRFIZ48VPbF www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + +- - -   /'0'® 1" ' 2                  •   •  !"   • # $% & & •  '     ($ $(  • )* #$   • +$,   • ) - #$  ($ !  2

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IRFIZ48VPbF 8 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 TO-220 Full-Pak Part Marking Information WIT H AS S E MB LY E XAMPL E : T H IS IS AN IR F I840G L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L INE "K " P AR T NU MB E R L OT CODE AS S E MB L Y INT E R NAT IONAL R E CT IF IE R L OGO 34 32 924K IR F I840G DAT E CODE YE AR 9 = 1999 WE E K 24 L INE K Note: "P" in assembly line position indicates "Lead-Free" TO-220 Full-Pak Package Outline

IRFIZ48VPBF Reviews

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Ingr*****hanna

August 11, 2020

Very supportive of my small orders, but very glad easy to work with. Hard to see how it could be any more efficient!

Aur***** Pall

August 4, 2020

The specs range is wide for a selection and the customer service is great.

IRFIZ48VPBF Guarantees

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