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IRFP4004PBF

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IRFP4004PBF

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Part Number IRFP4004PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 195A TO-247AC
Datasheet IRFP4004PBF Datasheet
Package TO-247-3
In Stock 43,502 piece(s)
Unit Price $ 5.4200 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # IRFP4004PBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFP4004PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFP4004PBFDatasheet
PackageTO-247-3
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds8920pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)380W (Tc)
Rds On (Max) @ Id, Vgs1.7 mOhm @ 195A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

IRFP4004PBF Datasheet

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06/05/08 Benefits  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 IRFP4004PbF Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits HEXFETPower MOSFET S D G  G D S Gate Drain Source TO-247AC S D G D VDSS 40V RDS(on) typ. 1.35mΩ max. 1.70mΩ ID (Silicon Limited) 350A ID (Package Limited) 195A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery  V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy  mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 0.40 RθCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient  ––– 40 300 Max. 350 250 1390 195 290 See Fig. 14, 15, 22a, 22b 380 2.0 -55 to + 175 ± 20 2.5 10lb in (1.1N m)

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 2 www.irf.com  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Refer to App Notes (AN-1140). Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.015mH RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use above this value. S D G  ISD ≤ 195A, di/dt ≤ 690A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.35 1.70 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 290 ––– ––– S Qg Total Gate Charge ––– 220 330 nC Qgs Gate-to-Source Charge ––– 59 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 75 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 145 ––– RG(int) Internal Gate Resistance ––– 6.8 ––– Ω td(on) Turn-On Delay Time ––– 59 ––– ns tr Rise Time ––– 370 ––– td(off) Turn-Off Delay Time ––– 160 ––– tf Fall Time ––– 190 ––– Ciss Input Capacitance ––– 8920 ––– pF Coss Output Capacitance ––– 2360 ––– Crss Reverse Transfer Capacitance ––– 930 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2860 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 3110 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 350 A (Body Diode) ISM Pulsed Source Current ––– ––– 1390 (Body Diode)  VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 83 130 ns TJ = 25°C VR = 20V, ––– 78 120 TJ = 125°C IF = 195A Qrr Reverse Recovery Charge ––– 190 290 nC TJ = 25°C di/dt = 100A/µs  ––– 210 320 TJ = 125°C IRRM Reverse Recovery Current ––– 4.0 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 195A RG = 2.7Ω VGS = 10V  VDD = 20V ID = 195A, VDS =0V, VGS = 10V TJ = 25°C, IS = 195A, VGS = 0V  integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA VGS = 10V, ID = 195A  VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 20V Conditions VGS = 10V  VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V VGS = 0V, VDS = 0V to 32V Conditions VDS = 10V, ID = 195A ID = 195A VGS = 20V VGS = -20V

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 www.irf.com 3 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 VDS, Drain-to-Source Voltage (V) 10 100 1000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ≤60µs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 VDS, Drain-to-Source Voltage (V) 10 100 1000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 4.5V ≤60µs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) 1.0 10 100 1000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) TJ = 25°C TJ = 175°C VDS = 10V ≤60µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 R D S (o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) ID = 195A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C a p a c it a n c e ( p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 50 100 150 200 250 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 V G S , G a te -t o -S o u rc e V o lt a g e ( V ) VDS= 32V VDS= 24V ID= 195A

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 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical COSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R e v e rs e D ra in C u rr e n t (A ) TJ = 25°C TJ = 175°C VGS = 0V 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 50 100 150 200 250 300 350 I D , D ra in C u rr e n t (A ) Limited By Package -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( °C ) 40 42 44 46 48 50 52 V (B R )D S S , D ra in -t o -S o u rc e B re a k d o w n V o lt a g e ( V ) Id = 5.0mA -5 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 2.5 E n e rg y ( µ J ) 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 200 400 600 800 1000 1200 E A S , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) ID TOP 36A 73A BOTTOM 195A 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 175°C Single Pulse 100µsec 1msec 10msec DC

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 www.irf.com 5 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) =T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 T h e rm a l R e s p o n s e ( Z t h J C ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 R 1 R 1 R 2 R 2 R 3 R 3 Ci i/Ri Ci= τi/Ri τ τ C τ 4 τ 4 R 4 R 4 Ri (°C/W) τi (sec) 0.0123 0.000011 0.0585 0.000055 0.1693 0.000917 0.1601 0.008784 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 50 100 150 200 250 300 E A R , A v a la n c h e E n e rg y ( m J ) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 1 10 100 1000 A v a la n c h e C u rr e n t (A ) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse)

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 6 www.irf.com     Fig 16. Threshold Voltage vs. Temperature             -75 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V G S (t h ) , G a te t h re s h o ld V o lt a g e ( V ) ID = 250µA ID = 1.0mA ID = 1.0A 0 100 200 300 400 500 600 diF /dt (A/µs) 2 4 6 8 10 12 14 I R R ( A ) IF = 117A VR = 34V TJ = 25°C TJ = 125°C 0 100 200 300 400 500 600 diF /dt (A/µs) 100 150 200 250 300 350 400 Q R R ( A ) IF = 117A VR = 34V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/µs) 2 4 6 8 10 12 I R R ( A ) IF = 78A VR = 34V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/µs) 50 100 150 200 250 300 350 Q R R ( A ) IF = 78A VR = 34V TJ = 25°C TJ = 125°C

Page 8

 www.irf.com 7 Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms V GS V DS 90% 10% t d(on) td(off)tr tf V GS Pulse Width < 1µs Duty Factor < 0.1% V DD V DS L D D.U.T + - Fig 21b. Unclamped Inductive WaveformsFig 21a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T L VDS + - VDD DRIVER A 15V 20VVGS Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20.         for N-Channel HEXFETPower MOSFETs 1K VCC DUT 0 L     •       •      •           P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period !    ! + - + + +- - -     •     •    !"!! •     #  $$ • !"!!%"        

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