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IRFP4229PBF

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IRFP4229PBF

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Part Number IRFP4229PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 250V 44A TO-247AC
Datasheet IRFP4229PBF Datasheet
Package TO-247-3
In Stock 365 piece(s)
Unit Price $ 4.0900 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # IRFP4229PBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFP4229PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFP4229PBFDatasheet
PackageTO-247-3
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds4560pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)310W (Tc)
Rds On (Max) @ Id, Vgs46 mOhm @ 26A, 10V
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

IRFP4229PBF Datasheet

Page 1

Page 2

www.irf.com 1 09/14/07 IRFP4229PbF Notes through  are on page 8 Description HEXFET® Power MOSFET                 MOSFET     !        "     MOSFET #$%&'  (    )  *    *  )MOSFET   +*    *        Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliability  G D S Gate Drain Source S D G TO-247AC S D G D VDS min 250 V VDS (Avalanche) typ. 300 V RDS(ON) typ. @ 10V 38 m IRP max @ TC= 100°C 87 A TJ max 175 °C Key Parameters Absolute Maximum Ratings Parameter Units VGS Gate-to-Source Voltage V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current IRP @ TC = 100°C Repetitive Peak Current  PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 0.49 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient  ––– 40 87 300 -40 to + 175 10lbin (1.1Nm) 310 150 2.0 Max. 31 180 44 ±30 

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 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 38 46 mΩ VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 83 ––– ––– S Qg Total Gate Charge ––– 72 110 nC Qgd Gate-to-Drain Charge ––– 26 ––– td(on) Turn-On Delay Time ––– 25 ––– tr Rise Time ––– 27 ––– ns td(off) Turn-Off Delay Time ––– 44 ––– tf Fall Time ––– 19 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 4560 ––– Coss Output Capacitance ––– 390 ––– pF Crss Reverse Transfer Capacitance ––– 100 ––– Coss eff. Effective Output Capacitance ––– 290 ––– LD Internal Drain Inductance ––– 5.0 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 13 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ EAR Repetitive Avalanche Energy  mJ VDS(Avalanche) Repetitive Avalanche Voltage V IAS Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 44 (Body Diode) A ISM Pulsed Source Current ––– ––– 180 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 190 290 ns Qrr Reverse Recovery Charge ––– 840 1260 nC VDD = 125V, VGS = 10V ID = 26A RG = 5.0Ω See Fig. 22 ––– 790 ––– ––– 1390 ––– 31 26 ––– ––– 300 ––– Typ. Max. ƒ = 1.0MHz, ––– 300 TJ = 25°C, IF = 26A, VDD = 50V di/dt = 100A/µs  TJ = 25°C, IS = 26A, VGS = 0V  showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 26A  VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V VGS = 0V, VDS = 0V to 200V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V MOSFET symbol VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10V Conditions and center of die contact VDD = 200V, VGS = 15V, RG= 4.7Ω VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VDS = 25V

Page 4

 www.irf.com 3 Fig 6. Typical EPULSE vs. Drain CurrentFig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) ≤ 60µs PULSE WIDTH Tj = 25°C 5.5V VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt (Α ) VDS = 25V ≤ 60µs PULSE WIDTH TJ = 25°C TJ = 175°C -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 26A VGS = 10V 150 160 170 180 190 200 VDS, Drain-to -Source Voltage (V) 0 400 800 1200 1600 E ne rg y pe r pu ls e (µ J) L = 220nH C = 0.3µF 100°C 25°C 100 110 120 130 140 150 160 170 ID, Peak Drain Current (A) 0 200 400 600 800 1000 1200 1400 E ne rg y pe r pu ls e (µ J) L = 220nH C = Variable 100°C 25°C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) ≤ 60µs PULSE WIDTH Tj = 175°C 5.5V VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V

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 4 www.irf.com Fig 11. Maximum Drain Current vs. Case Temperature Fig 8. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Safe Operating Area Fig 7. Typical EPULSE vs.Temperature Fig 10. Typical Gate Charge vs.Gate-to-Source VoltageFig 9. Typical Capacitance vs.Drain-to-Source Voltage 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 7000 C , C ap ac ita nc e (p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 QG Total Gate Charge (nC) 0 4 8 12 16 20 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 160V VDS= 100V VDS= 40V ID= 26A 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) 0 10 20 30 40 50 I D , D ra in C ur re nt ( A ) 25 50 75 100 125 150 Temperature (°C) 0 400 800 1200 1600 2000 E ne rg y pe r pu ls e (µ J) L = 220nH C= 0.3µF C= 0.2µF C= 0.1µF 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) Tc = 25°C Tj = 175°C Single Pulse 1µsec 10µsec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec

Page 6

 www.irf.com 5 Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 15. Threshold Voltage vs. Temperature Fig 14. Maximum Avalanche Energy Vs. TemperatureFig 13. On-Resistance Vs. Gate Voltage Fig 16. Typical Repetitive peak Current vs. Case temperature 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) 0.00 0.10 0.20 0.30 0.40 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (Ω ) TJ = 25°C TJ = 125°C ID = 26A -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 250µA 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 T he rm al R es po ns e ( Z th JC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τι (sec) 0.104678 0.000148 0.222607 0.001836 0.16298 0.01527 τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 τ τC Ci= τi/Ri Ci= τi/Ri 25 50 75 100 125 150 175 Case Temperature (°C) 0 20 40 60 80 100 120 140 R ep et iti ve P ea k C ur re nt ( A ) ton= 1µs Duty cycle = 0.25 Half Sine Wave Square Pulse 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) 0 200 400 600 800 1000 1200 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) I D TOP 5.8A 9.7A BOTTOM 26A

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 6 www.irf.com Fig 19b. Unclamped Inductive WaveformsFig 19a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20VVGS Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 18.           for HEXFET Power MOSFETs     •       •      •           P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period      + - + + +- - -     •     •    !"!! •     #  $$ • !"!!%"                    1K VCC DUT 0 L

Page 8

 www.irf.com 7 Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms PULSE A PULSE B tST DRIVER DUT L C VCC RG RG B A Ipulse Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms   &'≤ 1 (  #  ≤ 0.1 %      + - VDS 90% 10% VGS td(on) tr td(off) tf

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