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IRFR210TRPBF

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IRFR210TRPBF

For Reference Only

Part Number IRFR210TRPBF
Manufacturer Vishay Siliconix
Description MOSFET N-CH 200V 2.6A DPAK
Datasheet IRFR210TRPBF Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 20,000 piece(s)
Unit Price $ 0.3828 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # IRFR210TRPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IRFR210TRPBF specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IRFR210TRPBF with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IRFR210TRPBF.

IRFR210TRPBF Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFR210TRPBFDatasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

IRFR210TRPBF Datasheet

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 1 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 , IAS = 2.6 A (see fig. 12). c. ISD  2.6 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR210-GE3 SiHFR210TRL-GE3a - SiHFR210TRR-GE3a SiHFU210-GE3 Lead (Pb)-free IRFR210PbF IRFR210TRLPbFa IRFR210TRPbFa - IRFU210PbF SiHFR210-E3 SiHFR210TL-E3a SiHFR210T-E3a - SiHFU210-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 2.6 ATC = 100 °C 1.7 Pulsed Drain Currenta IDM 10 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 95 mJ Avalanche Currenta IAR 2.7 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 260

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 2 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 5.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.6 A b - - 1.5  Forward Transconductance gfs VDS = 50 V, ID = 1.6 A b 0.80 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 140 - pFOutput Capacitance Coss - 53 - Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg VGS = 10 V ID = 3.3 A, VDS = 160 V, see fig. 6 and 13b - - 8.2 nC Gate-Source Charge Qgs - - 1.8 Gate-Drain Charge Qgd - - 4.5 Turn-On Delay Time td(on) VDD = 100 V, ID = 3.3 A, Rg = 24 , RD = 30 , see fig. 10b - 8.2 - ns Rise Time tr - 17 - Turn-Off Delay Time td(off) - 14 - Fall Time tf - 8.9 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 2.6 A Pulsed Diode Forward Currenta ISM - - 10 Body Diode Voltage VSD TJ = 25 °C, IS = 2.6 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b - 150 310 ns Body Diode Reverse Recovery Charge Qrr - 0.60 1.4 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 3 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 4 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 5 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V + - VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 6 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ωtp D.U.T L VDS + - V DD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix S13-0171-Rev. E, 04-Feb-13 7 Document Number: 91268 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91268. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V a ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD

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Package Information www.vishay.com Vishay Siliconix Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-252AA Case Outline Notes • Dimension L3 is for reference only. L 3 D L 4 L 5 b b2 e1 E1 D 1 C A1 g a g e p la n e h e ig h t (0 .5 m m ) e b3 E C2 A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347

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Application Note 826 Vishay Siliconix Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0 .4 2 0 (1 0 .6 6 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0 .2 4 3 (6 .1 8 0 ) 0 .0 8 7 (2 .2 0 2 ) 0 .0 9 0 (2 .2 8 6 ) Return to IndexReturn to Index

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