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IRFU4615PBF

hot IRFU4615PBF

IRFU4615PBF

For Reference Only

Part Number IRFU4615PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 150V 33A IPAK
Datasheet IRFU4615PBF Datasheet
Package TO-251-3 Short Leads, IPak, TO-251AA
In Stock 385 piece(s)
Unit Price $ 1.67 *
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IRFU4615PBF

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  • To learn about the specification of IRFU4615PBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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IRFU4615PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFU4615PBF Datasheet
PackageTO-251-3 Short Leads, IPak, TO-251AA
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25��C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1750pF @ 50V
Vgs (Max)��20V
Power Dissipation (Max)144W (Tc)
Rds On (Max) @ Id, Vgs42 mOhm @ 21A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

IRFU4615PBF Datasheet

Page 1

Page 2

HEXFETPower MOSFET Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability Lead-Free Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits S D G G D S Gate Drain Source DPak IRFR4615PbF IPAK IRFU4615PbF VDSS 150V RDS(on) typ. 34m max. 42m ID 33A D S G Notes through  are on page 11 S D G D Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery  V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 1.045 RθJA Junction-to-Ambient (PCB Mount)  ––– 50 RθJA Junction-to-Ambient ––– 110 Max. 33 24 140 0.96 300 °C/W °C A 109 See Fig. 14, 15, 22a, 22b, 144 38 -55 to + 175 ± 20            Form Quantity IRFR4615PbF Tube/Bulk 75 IRFR4615PbF IRFR4615TRLPbF Tape and Reel Left 3000 IRFR4615TRLPbF IRFU4615PbF I-PAK Tube/Bulk 75 IRFU4615PbF D-PAK Base Part Number Package Type Standard Pack Orderable Part Number

Page 3

        S D G Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 34 42 mΩ VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 2.7 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 35 ––– ––– S Qg Total Gate Charge ––– 26 Qgs Gate-to-Source Charge ––– 8.6 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 9.0 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 17 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 35 ––– td(off) Turn-Off Delay Time ––– 25 ––– tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 1750 ––– Coss Output Capacitance ––– 155 ––– Crss Reverse Transfer Capacitance ––– 40 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)––– 179 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 382 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 70 ––– TJ = 25°C VR = 100V, ––– 83 ––– TJ = 125°C IF = 21A Qrr Reverse Recovery Charge ––– 177 ––– TJ = 25°C di/dt = 100A/μs  ––– 247 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 4.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ns nC 33 140 μA nA nC ns pF A ––– ––– ––– ––– ID = 21A RG = 7.3Ω VGS = 10V  VDD = 98V ID = 21A, VDS =0V, VGS = 10V TJ = 25°C, IS = 21A, VGS = 0V  integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA VGS = 10V, ID = 21A  VDS = VGS, ID = 100μA VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 75V Conditions VGS = 10V  VGS = 0V VDS = 50V ƒ = 1.0MHz (See Fig.5) VGS = 0V, VDS = 0V to 120V (See Fig.11) VGS = 0V, VDS = 0V to 120V  Conditions VDS = 50V, ID = 21A ID = 21A VGS = 20V VGS = -20V

Page 4

        Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V ≤60μs PULSE WIDTH Tj = 25°C 5.0V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V ≤60μs PULSE WIDTH Tj = 175°C 5.0V 2 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 175°C VDS = 50V ≤60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 3.0 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 21A VGS = 10V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 120V VDS= 75V VDS= 30V ID= 21A

Page 5

        Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical COSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 175°C Single Pulse 100μsec 1msec 10msec DC -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( °C ) 140 145 150 155 160 165 170 175 180 185 190 V (B R )D S S , D ra in -t o- S ou rc e B re ak do w n V ol ta ge ( V ) Id = 5mA 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 50 100 150 200 250 300 350 400 450 500 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 2.8A 5.3A BOTTOM 21A -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 E ne rg y (μ J) 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 5 10 15 20 25 30 35 40 I D , D ra in C ur re nt ( A )

Page 6

        Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) =T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 T he rm al R es po ns e ( Z th JC ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 0.1 1 10 100 A va la nc he C ur re nt ( A ) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 20 40 60 80 100 120 E A R , A va la nc he E ne rg y (m J) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 21A τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci i/Ri Ci= τi/Ri τ τC τ4 τ4 R4 R4 Ri (°C/W) τi (sec) 0.02324 0.000008 0.26212 0.000106 0.50102 0.001115 0.25880 0.005407

Page 7

           !"#$#Fig 16. Threshold Voltage vs. Temperature   % # &'"#$#    !"#$#   % # &'"#$# -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V G S (t h) , G at e th re sh ol d V ol ta ge ( V ) ID = 100μA ID = 250uA ID = 1.0mA ID = 1.0A 0 200 400 600 800 1000 diF /dt (A/μs) 100 200 300 400 500 600 700 800 Q R R ( A ) IF = 14A VR = 100V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) 100 200 300 400 500 600 700 800 900 1000 Q R R ( A ) IF = 21A VR = 100V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) 0 5 10 15 20 25 30 35 I R R M ( A ) IF = 21A VR = 100V TJ = 25°C TJ = 125°C 0 200 400 600 800 1000 diF /dt (A/μs) 0 5 10 15 20 25 30 I R R M ( A ) IF = 14A VR = 100V TJ = 25°C TJ = 125°C

Page 8

(        Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 22b. Unclamped Inductive WaveformsFig 22a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20VVGS Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 21. )*+ # #$#"  !for N-Channel HEXFETPower MOSFETs      •       •      •           P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period ,       , + - + + +- - -     •      •   ! "#"" •     $  %% • "#""&#        D.U.T. VDS IDIG 3mA VGS .3μF 50KΩ .2μF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VDS 90% 10% VGS td(on) tr td(off) tf  '(≤ 1 )  $  ≤ 0.1 %      + -  

Page 9

-                         INTERNAT IONAL ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" OR Note: "P" in assembly line pos ition EXAMPLE: LOT CODE 1234 THIS IS AN IRFR120 WITH ASSEMBLY indicates "Lead-Free" PRODUCT (OPTIONAL) P = DES IGNATES LEAD-FREE A = ASSEMBLY S ITE CODE PART NUMBER WEEK 16 DATE CODE YEAR 1 = 2001 RECT IFIER INTERNATIONAL LOGO LOT CODE ASSEMBLY 3412 IRFR120 116A LINE A 34 RECT IFIER LOGO IRFR120 12 ASSEMBLY LOT CODE YEAR 1 = 2001 DATE CODE PART NUMBER WEEK 16 "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level P = DES IGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Page 10

.                           78 LINE A LOGO INTERNAT IONAL RECTIFIER OR PRODUCT (OPT IONAL) P = DESIGNATES LEAD-FREE A = ASSEMBLY S ITE CODE IRFU120 PART NUMBER WEEK 19 DATE CODE YEAR 1 = 2001 RECTIFIER INTERNAT IONAL LOGO ASSEMBLY LOT CODE IRFU120 56 DATE CODE PART NUMBER LOT CODE ASSEMBLY 56 78 YEAR 1 = 2001 WEEK 19 119A indicates Lead-Free" ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position EXAMPLE: WITH ASSEMBLY THIS IS AN IRFU120 LOT CODE 5678 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRFU4615PBF Reviews

Average User Rating
5 / 5 (101)
★ ★ ★ ★ ★
5 ★
91
4 ★
10
3 ★
0
2 ★
0
1 ★
0

Giul***** Wolfe

January 7, 2020

Work Great. Would recommend. Only used 2. So I have 248 extras. Best deal by far that's why I got these.

Milo*****guson

August 20, 2019

I bought this for myself, and liked it so much. I also bought one for a friend.

Felip*****dford

July 6, 2019

Work great, great price, I use a lot of them for battery chargers, not the first time ordered.

Nat***** Mall

May 22, 2019

Always meet my expectations with order and questions.

Miria*****nings

May 3, 2019

This product is very easy to replace and solved my problem.

Jac*****adami

March 1, 2019

You guys and girls I can trust and rely on. Thank You All!

Dem*****arza

December 5, 2018

I tested some and all look good.

Kimo*****agle

August 21, 2018

I enjoy Good service from Heisener team , I can get good quality components what I want in heisener.com.

Parke*****uwalia

June 23, 2018

Order arrived to Estonia in 3 days. Item as described. Well packed.

Myah*****dshaw

June 1, 2018

It's so nice to have all these babies. I was using so many for projects, I decided to buy these. They'll definitely last me a while!

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