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IRG4BC20K

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IRG4BC20K

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Part Number IRG4BC20K
Manufacturer Infineon Technologies
Description IGBT 600V 16A 60W TO220AB
Datasheet IRG4BC20K Datasheet
Package TO-220-3
In Stock 9,200 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 2 - Jun 7 (Choose Expedited Shipping)
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Part Number # IRG4BC20K (Transistors - IGBTs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRG4BC20K Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - IGBTs - Single
Datasheet IRG4BC20KDatasheet
PackageTO-220-3
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)16A
Current - Collector Pulsed (Icm)32A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 9A
Power - Max60W
Switching Energy150��J (on), 250��J (off)
Input TypeStandard
Gate Charge34nC
Td (on/off) @ 25°C28ns/150ns
Test Condition480V, 9A, 50 Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

IRG4BC20K Datasheet

Page 1

Page 2

VCES = 600V VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 9.0 A ICM Pulsed Collector Current  32 ILM Clamped Inductive Load Current  32 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy  29 mJ PD @ TC = 25°C Maximum Power Dissipation 60 W PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  Short Circuit Rated UltraFast IGBT       Parameter Typ. Max. Units Rθ JC Junction-to-Case ––– 2.1 Rθ CS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W Rθ JA Junction-to-Ambient, typical socket mount ––– 80 Wt Weight 2.0 (0.07) ––– g (oz) Thermal Resistance E C G n-channel TO-220AB Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC20K and IRGBC20M devices Benefits 4/24/2000 www.irf.com 1

Page 3

IRG4BC20K 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage  18 — — V VGE = 0V, IC = 1.0A ∆ V(BR)CES/∆ TJ Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C VGE = 0V, IC = 1.0mA — 2.00 — IC = 6.0A — 2.27 2.8 IC = 9.0A VGE = 15V — 3.01 — IC = 16A See Fig.2, 5 — 2.43 — IC = 9.0A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆ VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance  2.9 4.3 — S VCE = 100 V, IC = 9.0A — — 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current — — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VVCE(ON) Collector-to-Emitter Saturation Voltage Details of note  through  are on the last page Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 34 51 IC = 9.0A Qge Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 14 21 VGE = 15V td(on) Turn-On Delay Time — 28 — tr Rise Time — 27 — TJ = 25°C td(off) Turn-Off Delay Time — 150 220 IC = 9.0A, VCC = 480V tf Fall Time — 100 150 VGE = 15V, RG = 50Ω Eon Turn-On Switching Loss — 0.15 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.25 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 0.40 0.6 tsc Short Circuit Withstand Time 10 — — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 50Ω , VCPK < 500V td(on) Turn-On Delay Time — 28 — TJ = 150°C, tr Rise Time — 29 — IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 190 — VGE = 15V, RG = 50Ω tf Fall Time — 190 — Energy losses include "tail" Ets Total Switching Loss — 0.68 — mJ See Fig. 11,14 Eon Turn-On Switching Loss — 0.07 — TJ = 25°C, VGE = 15V, RG = 50Ω Eoff Turn-Off Switching Loss — 0.13 — mJ IC = 6.0A, VCC = 480V Ets Total Switching Loss — 0.20 — Energy losses include "tail" LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 450 — VGE = 0V Coes Output Capacitance — 61 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 14 — ƒ = 1.0MHz Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns

Page 4

IRG4BC20K www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 1 10 100 1 10 V , Collector-to-Emitter Voltage (V) I , C o lle c to r- to -E m it te r C u rr e n t (A ) CE C  V = 15V 20µs PULSE WIDTH GE  T = 25 CJ o T = 150 CJ o 1 10 100 5 10 15 20 V , Gate-to-Emitter Voltage (V) I , C o lle c to r- to -E m it te r C u rr e n t (A ) GE C  V = 50V 5µs PULSE WIDTH CC  T = 25 CJ o  T = 150 CJ o 0 4 8 1 2 1 6 2 0 0.1 1 1 0 1 0 0 f, Frequency (kHz) A 6 0 % o f ra te d v o lta g e I Id e al d io de s S qu are wave : F o r b o th : D u ty cyc le : 50% T = 125 ° C T = 90 °C G ate dr ive as spec ified s ink J T r ia n g u la r w a ve : I C la m p vo l ta g e : 8 0 % o f ra te d Po w e r D is s ip a t io n = 1 3 W L o a d C u rr e n t ( A )

Page 5

IRG4BC20K 4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 5.0 T , Junction Temperature ( C) V , C o ll e c to r- to -E m it te r V o lt a g e (V ) J ° C E  V = 15V 80 us PULSE WIDTH GE I = A4.5C I = A9C I = A18C 25 50 75 100 125 150 0 5 10 15 20 T , Case Temperature ( C) M a x im u m D C C o lle c to r C u rr e n t( A ) C ° 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1  Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C  P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e ( Z ) 1 th J C 0.01 0.02 0.05 0.10 0.20 D = 0.50  SINGLE PULSE (THERMAL RESPONSE) 9.0A

Page 6

IRG4BC20K www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , G a te -t o -E m it te r V o lt a g e ( V ) G G E  V = 400V I = 9.0A CC C 0 10 20 30 40 50 0.2 0.3 0.4 0.5 R , Gate Resistance (Ohm) T o ta l S w it c h in g L o s s e s ( m J ) G  V = 480V V = 15V T = 25 C I = 9A CC GE J C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 T , Junction Temperature ( C ) T o ta l S w it c h in g L o s s e s ( m J ) J °  R = Ohm V = 15V V = 480V G GE CC I = A18C I = A9C I = A4.5C 50Ω 1 10 100 0 200 400 600 800 V , Collector-to-Emitter Voltage (V) C , C a p a c it a n c e ( p F ) CE  V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc  Cies  Coes  Cres RG , Gate Resista Ω ) .0A 9.0A

Page 7

IRG4BC20K 6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 0 8 16 24 32 40 0.0 1.0 2.0 3.0 4.0 5.0 I , Collector-to-emitter Current (A) T o ta l S w it c h in g L o s s e s ( m J ) C  R = Ohm T = 150 C V = 480V V = 15V G J CC GE ° 1 10 100 1 10 100 1000  V = 20V T = 125 C GE J o V , Collector-to-Emitter Voltage (V) I , C o lle c to r- to -E m it te r C u rr e n t (A ) CE C SAFE OPERATING AREA 50Ω

Page 8

IRG4BC20K www.irf.com 7 480V 4 X IC@25°C D.U.T. 50V L V *C   * Dr iver sam e type as D .U .T.; Vc = 80% of V ce(m ax) * Note: D ue to the 50V pow er supply, pulse w idth and inductor w ill increase to obta in ra ted Id. 1000V Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit 480µF 960V 0 - 480V RL = t=5µsd(o n )t t ft r 90% td (o ff) 10% 90% 10%5% VC IC E o n E o ff ts o n o ffE = (E +E )    Fig. 14b - Switching Loss Waveforms 50V Driver* 1000V D.U.T. IC CV    L Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V

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IRG4BC20K 8 www.irf.com         0.55 (.0 22) 0.46 (.0 18) 3 X 2.92 (.115 ) 2.64 (.104 ) 1.32 (.05 2) 1.22 (.04 8) - B - 4 .69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - A - 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN 4.06 (.160) 3.55 (.140) 3 X 3.96 (.1 60) 3.55 (.1 40) 3 X 0.93 (.037) 0.69 (.027) 0 .36 (.014) M B A M 10.54 (.415) 10 .29 (.405)2.87 (.113) 2.62 (.103) 15 .24 (.600) 14 .84 (.584) 14 .09 (.555) 13 .47 (.530) 1 .40 (.055) 1 .15 (.045) 3 X 2 .54 (.100) 2X 1 2 3 4 CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M ill im e te rs a n d ( In ch e s ) L E A D A S S IG N M E N T S 1 - G A TE 2 - C O L LE C TO R 3 - E M ITT E R 4 - C O L LE C TO R N O TE S : 1 D IM E N S IO N S & T O L ER A N C IN G P E R A N S I Y1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N SIO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM ET E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U TL IN E TO -2 20 A B .  Repetitive rating; pulse width limited by maximum junction temperature.  Pulse width ≤ 80µs; duty factor ≤ 0.1%.  Pulse width 5.0µs, single shot. Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )  VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω , (See fig. 13a) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00

IRG4BC20K Reviews

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Abe*****agar

May 18, 2020

Works just like the original one and even has the correct connectors installed.

Embe*****roff

May 10, 2020

These are high quality connectors. They work as you would expect them to. There is not much else you can say about them.

Krist*****aughn

May 10, 2020

The prices are very competitive, I've had a few transactions lately and all were smooth as glass. I'm a very satisfied customer!

Brax*****Marin

May 2, 2020

Fast shipping. Got it in few dayss from Hong Kong

Anna*****e Snow

April 26, 2020

So far all the items still work. I'm using these for some home made solar panels and they're doing great.

Jud*****angha

April 18, 2020

Every little component you can always find in here, and good suggestion for relative times too.

Emers*****rajas

April 16, 2020

I love your products are well organized. You make it easy to spend $$$! Lol. Keep up the good work folks!

Fran*****Cooper

April 15, 2020

Item sent as described. Showed up quickly. Worked as it said and would recommend again.

Lac*****Johns

April 11, 2020

This help solved the extra electricity flowing back.

Calv*****istry

April 8, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

IRG4BC20K Guarantees

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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