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IRGP4650D-EPBF

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IRGP4650D-EPBF

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Part Number IRGP4650D-EPBF
Manufacturer Infineon Technologies
Description IGBT 600V 76A 268W TO247AD
Datasheet IRGP4650D-EPBF Datasheet
Package TO-247-3
In Stock 287 piece(s)
Unit Price $ 6.9900 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 26 - Oct 1 (Choose Expedited Shipping)
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Part Number # IRGP4650D-EPBF (Transistors - IGBTs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRGP4650D-EPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - IGBTs - Single
Datasheet IRGP4650D-EPBFDatasheet
PackageTO-247-3
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)76A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 35A
Power - Max268W
Switching Energy390��J (on), 632��J (off)
Input TypeStandard
Gate Charge104nC
Td (on/off) @ 25°C46ns/105ns
Test Condition400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr)120ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

IRGP4650D-EPBF Datasheet

Page 1

Page 2

               TO-247AC IRGP4650DPbF TO-247AD IRGP4650D-EP E G n-channel C G C E Gate Collector Emitter Applications • Industrial Motor Drive • Inverters • UPS • Welding VCES = 600V IC = 50A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 35A Form Quantity IRGP4650DPbF TO-247AC Tube 25 IRGP4650DPbF IRGP4650D-EPbF TO-247AD Tube 25 IRGP4650D-EPbF Base part number Package Type Standard Pack Orderable part number Features Benefits Low VCE(ON) and Switching Losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and Maximum Junction Temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation 5μs short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly G G C E C C E C         !  "#  Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 76 IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current, VGE = 15V 105 A ILM Clamped Inductive Load Current, VGE = 20V 140 IF @ TC = 25°C Diode Continous Forward Current 76 IF @ TC = 100°C Diode Continous Forward Current 50 IFM Diode Maximum Forward Current  140 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 268 PD @ TC = 100°C Maximum Power Dissipation 134 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Junction-to-Case (IGBT)  ––– ––– 0.56 RθJC (Diode) Junction-to-Case (Diode)  ––– ––– 1.0 RθCS Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40 °C/W W

Page 3

            !  "#  Notes:  VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10Ω.  Rθ is measured at TJ of approximately 90°C.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Pulse width limited by max. junction temperature.           Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.3 — mV/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.60 1.90 IC = 35A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 35A, VGE = 15V, TJ = 150°C — 2.00 — IC = 35A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 25 — S VCE = 50V, IC = 35A, PW = 60μs ICES Collector-to-Emitter Leakage Current — 1.0 70 μA VGE = 0V, VCE = 600V — 770 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 2.0 3.0 V IF = 35A — 1.4 — IF = 35A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 69 104 IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 18 27 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 29 44 VCC = 400V Eon Turn-On Switching Loss — 390 508 IC = 35A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 632 753 μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1022 1261 Energy losses include tail & diode reverse recovery  td(on) Turn-On delay time — 46 56 IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 33 42 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 105 117 tf Fall time — 44 54 Eon Turn-On Switching Loss — 1013 — IC = 35A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 929 — μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C Etotal Total Switching Loss — 1942 — Energy losses include tail & diode reverse recovery  td(on) Turn-On delay time — 43 — IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 35 — ns RG = 10Ω, L = 200μH, LS = 150nH td(off) Turn-Off delay time — 127 — TJ = 175°C tf Fall time — 61 — Cies Input Capacitance — 2113 — pF VGE = 0V Coes Output Capacitance — 197 — VCC = 30V Cres Reverse Transfer Capacitance — 65 — f = 1.0Mhz TJ = 175°C, IC = 140A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp 600V Rg = 10Ω, VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area VCC = 400V, Vp 600V Rg = 10Ω, VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 304 — μJ TJ = 175°C trr Diode Reverse Recovery Time — 120 — ns VCC = 400V, IF = 35A Irr Peak Reverse Recovery Current — 25 — A VGE = 15V, Rg = 10Ω, L =210μH, Ls = 150nH Conditions μs5 — —

Page 4

            !  "# $ Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60μs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60μs 25 50 75 100 125 150 175 TC (°C) 0 10 20 30 40 50 60 70 80 I C ( A ) 25 50 75 100 125 150 175 TC (°C) 0 50 100 150 200 250 300 P to t ( W ) 10 100 1000 VCE (V) 1 10 100 1000 I C ( A ) 0 2 4 6 8 10 VCE (V) 0 20 40 60 80 100 120 140 I C E ( A ) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0 2 4 6 8 10 VCE (V) 0 20 40 60 80 100 120 140 I C E ( A ) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1 10 100 1000 VCE (V) 0.1 1 10 100 1000 I C ( A ) 10μsec 100μsec Tc = 25°C Tj = 175°C Single Pulse DC 1msec

Page 5

            !  "#  Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60μs Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 60μs Fig. 9 - Typical VCE vs. VGE TJ = -40°C 0 2 4 6 8 10 VCE (V) 0 20 40 60 80 100 120 140 I C E ( A ) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0.0 1.0 2.0 3.0 4.0 VF (V) 0 20 40 60 80 100 120 140 I F ( A ) -40°C 25°C 175°C 5 10 15 20 VGE (V) 0 2 4 6 8 10 12 14 16 18 20 V C E ( V ) ICE = 18A ICE = 35A ICE = 70A 5 10 15 20 VGE (V) 0 2 4 6 8 10 12 14 16 18 20 V C E ( V ) ICE = 18A ICE = 35A ICE = 70A 5 10 15 20 VGE (V) 0 2 4 6 8 10 12 14 16 18 20 V C E ( V ) ICE = 18A ICE = 35A ICE = 70A 4 5 6 7 8 9 10 11 12 13 14 VGE, Gate-to-Emitter Voltage (V) 0 20 40 60 80 100 120 140 I C , C ol le ct or -t o- E m itt er C ur re nt ( A ) TJ = 175°C TJ = 25°C

Page 6

            !  "# % Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C 0 10 20 30 40 50 60 70 IC (A) 0 500 1000 1500 2000 2500 3000 3500 4000 E ne rg y (μ J) EOFF EON 0 10 20 30 40 50 60 70 IC (A) 10 100 1000 S w ic hi ng T im e (n s) tR tdOFF tF tdON 0 25 50 75 100 Rg (Ω) 500 1000 1500 2000 2500 3000 E ne rg y (μ J) EOFF EON 0 10 20 30 40 50 RG (Ω) 10 100 1000 S w ic hi ng T im e (n s) tR tdOFF tF tdON 10 20 30 40 50 60 70 IF (A) 10 15 20 25 30 35 I R R ( A ) RG = 100Ω RG = 10Ω RG = 22Ω RG = 47Ω 0 20 40 60 80 100 RG (Ω) 14 16 18 20 22 24 26 I R R ( A )

Page 7

            !  "# & Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 35A; L = 740μH Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 0 100 200 300 400 500 VCE (V) 10 100 1000 10000 C ap ac ita nc e (p F ) Cies Coes Cres 0 10 20 30 40 50 60 70 Q G, Total Gate Charge (nC) 0 2 4 6 8 10 12 14 16 V G E , G at e- to -E m itt er V ol ta ge ( V ) VCES = 400V VCES = 300V 200 300 400 500 600 700 diF /dt (A/μs) 14 16 18 20 22 24 26 I R R ( A ) 10 20 30 40 50 60 70 IF (A) 100 150 200 250 300 350 400 E ne rg y (μ J) RG = 100Ω RG = 47Ω RG = 22Ω RG = 10Ω 8 10 12 14 16 18 VGE (V) 0 5 10 15 20 T im e ( μs ) 0 75 150 225 300 C urrent (A ) Tsc Isc 100 200 300 400 500 600 700 800 900 diF /dt (A/μs) 1000 1250 1500 1750 2000 2250 2500 Q R R ( nC ) 10Ω 22Ω 100Ω 47Ω 35A 70A 18A

Page 8

            !  "# " Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 T he rm al R es po ns e ( Z th JC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci i/Ri Ci= τi/Ri τ τC τ4 τ4 R4 R4 Ri (°C/W) τi (sec) 0.01041 0.000006 0.15911 0.000142 0.23643 0.002035 0.15465 0.013806 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 1 10 T he rm al R es po ns e ( Z th JC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci i/Ri Ci= τi/Ri τ τC τ4 τ4 R4 R4 Ri (°C/W) τi (sec) 0.01716 0.000031 0.35875 0.000517 0.41334 0.004192 0.20121 0.024392

Page 9

            !  "# ' Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit 0 1K VCCDUT L L Rg 80 V DUT VCC + - Fig.C.T.5 - Resistive Load Circuit Rg VCC DUT R = VCC ICM G force C sense 100K DUT 0.0075μF D1 22K E force C force E sense Fig.C.T.6 - BVCES Filter Circuit Fig.C.T.3 - S.C. SOA Circuit DC 4X DUT VCC SCSOA Fig.C.T.4 - Switching Loss Circuit L Rg VCCDUT / DRIVER diode clamp / DUT -5V

Page 10

            !  "# ( Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 -100 0 100 200 300 400 500 600 6.4 6.6 6.8 7 7.2 time (μs) V C E ( V ) -10 0 10 20 30 40 50 60 I C E ( A ) TEST CURRENT 90% test current 5% VCE10% test current tr Eon Loss -100 0 100 200 300 400 500 600 -0.5 0 0.5 1 1.5 2 time(μs) V C E ( V ) -10 0 10 20 30 40 50 60 IC E ( A ) 90% ICE 5% VCE 5% ICE Eoff Loss tf Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 -100 0 100 200 300 400 500 600 700 -4.5 0.5 5.5 10.5 Time (uS) V ce ( V ) -50 0 50 100 150 200 250 300 350 I C E (A ) VCE ICE -30 -20 -10 0 10 20 30 40 -0.3 -0.2 -0.1 0 0.1 0.2 time (μS) V F ( V ) Peak IRR tRR QRR 10% Peak IRR

IRGP4650D-EPBF Reviews

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Sie***** Gill

August 22, 2020

Great capacitors. very fast post very good communication.

Jayc*****arley

August 14, 2020

I love your products are well organized. You make it easy to spend $$$! Lol. Keep up the good work folks!

Alai*****hawla

August 12, 2020

Works as expected. Fits good in circuit board, not lose or slipping around.

Lar*****hang

August 12, 2020

These function just as well. You do need to spend some time modifying the harness, but no big deal.

Fish*****enton

August 11, 2020

Those components that were in stock shipped fast and arrived promptly.

Dest*****Clay

August 10, 2020

Worked like it was intended.

Leo *****ings

August 9, 2020

Always the correct parts in the correct amounts are received. Fantastic Quality Control and Great Selection. Heisener has became to be one of my best suppliers for many years now.

Kayl*****adakia

July 17, 2020

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Sha*****Wolf

July 16, 2020

Heisener is on a very short list of companies I highly recommend without any hesitation. From stock, pricing, ease of ordering and great service, they have it all.

Mab*****Felix

July 9, 2020

Works great with an older drive in a newer computer.have not encountered any problems, Glad somebody is making these for all the older equipment.

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