Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

IRLI2910

hotIRLI2910

IRLI2910

For Reference Only

Part Number IRLI2910
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 31A TO220FP
Datasheet IRLI2910 Datasheet
Package TO-220-3 Full Pack
In Stock 373 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 15 - Jul 20 (Choose Expedited Shipping)
Request for Quotation

Part Number # IRLI2910 (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IRLI2910 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IRLI2910 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IRLI2910.

IRLI2910 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRLI2910Datasheet
PackageTO-220-3 Full Pack
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
Vgs (Max)��16V
FET Feature-
Power Dissipation (Max)63W (Tc)
Rds On (Max) @ Id, Vgs26 mOhm @ 16A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

IRLI2910 Datasheet

Page 1

Page 2

IRLI2910 PRELIMINARY HEXFET® Power MOSFET PD - 9.1384B S D G VDSS = 100V RDS(on) = 0.026Ω ID = 31A l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated TO-220 FULLPAK Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.4 °C/W RθJA Junction-to-Ambient ––– 65 °C/W Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A IDM Pulsed Drain Current † 190 PD @TC = 25°C Power Dissipation 63 W Linear Derating Factor 0.42 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy‚† 520 mJ IAR Avalanche Current† 29 A EAR Repetitive Avalanche Energy 6.3 mJ dv/dt Peak Diode Recovery dv/dt ƒ† 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Description 3/16/98

Page 3

IRLI2910 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.026 VGS = 10V, ID = 16A „ ––– ––– 0.030 Ω VGS = 5.0V, ID = 16A „ ––– ––– 0.040 VGS = 4.0V, ID = 14A „ VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A† ––– ––– 25 VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 140 ID = 29A Qgs Gate-to-Source Charge ––– ––– 20 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13 „† td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 100 ––– ns ID = 29A td(off) Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V tf Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10 „† Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3700 ––– VGS = 0V Coss Output Capacitance ––– 630 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5† C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current S D G LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) † ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V „ trr Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A Qrr Reverse RecoveryCharge ––– 1.8 2.7 µC di/dt = 100A/µs „† Source-Drain Ratings and Characteristics S D G Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 1.2mH RG = 25Ω, IAS = 29A. (See Figure 12) … t=60s, ƒ=60Hz ƒ ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C † Uses IRL2910 data and test conditions „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 190 31 pF nH µA A

Page 4

IRLI2910 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D ra in-to-Source Voltage (V )D S A 20µ s P U LS E W ID TH T = 25°CJ VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D ra in-to-Source Voltage (V )D S A 20µ s P U LS E W ID TH T = 175°C VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V J 1 10 100 1000 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 T = 25 °CJ G SV , G a te -to -S ou rce V o lta ge (V ) DI , D ra in -t o -S o u rc e C u rr e n t (A ) T = 17 5 °CJ A V = 5 0V 2 0µ s P U LS E W ID TH D S 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 JT , Junction Tem perature (°C ) R , D ra in -t o -S o u rc e O n R e s is ta n c e D S (o n ) (N o rm a liz e d ) V = 10V G S A I = 48AD

Page 5

IRLI2910 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 1000 2000 3000 4000 5000 6000 1 10 100 C , C a p a c it a n c e ( p F ) D SV , D rain-to-Source Voltage (V ) A V = 0V , f = 1M H z C = C + C , C S H O R TE D C = C C = C + C G S iss gs gd ds rss gd oss ds gdC is s C o s s C rs s 0 3 6 9 12 15 0 40 80 120 160 200 Q , Tota l G ate C harge (nC )G V , G a te -t o -S o u rc e V o lt a g e ( V ) G S V = 80V V = 50V V = 20V A FO R TE S T C IR C U IT S E E FIG U R E 13 I = 29A D S D S D S D 10 100 1000 0.4 0.8 1.2 1.6 2.0 T = 25°CJ V = 0V G S V , Source-to-D rain Voltage (V ) I , R e v e rs e D ra in C u rr e n t (A ) S D S D A T = 175°CJ 1 10 100 1000 1 10 100 1000 V , D ra in-to-Source Voltage (V )D S I , D ra in C u rr e n t (A ) O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D D S(on) 10µ s 100µs 1m s 10m s A T = 25°C T = 175°C S ing le P u lse C J

Page 6

IRLI2910 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 5.0V + -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J C 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T , Case Temperature ( C) I , D ra in C u rr e n t (A ) ° C D

Page 7

IRLI2910 QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - 5.0 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current 0 200 400 600 800 1000 1200 1400 25 50 75 100 125 150 175 J E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) A S A S tarting T , Junction Tem perature (°C ) V = 25V I TO P 12A 20A B O TTO M 29A D D D Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (B R )D S S IA S R G IA S 0 .01Ωtp D .U .T L VD S + - VD D DR IVE R A 15V 20V

Page 8

IRLI2910 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + +- - - Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit ƒ „ ‚ RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer  *

Page 9

IRLI2910 P A R T N U M B E RIN TE R N A T IO N A L R E C TIF IE R L O G O E XA M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A S S E M B L Y L O T C O D E D A TE C O D E (YYW W ) YY = YE A R W W = W E E K 9 24 6 IR F 10 10 9 B 1 M A Part Marking Information TO-220 Fullpak Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) LEA D A S SIG N MEN TS 1 - G ATE 2 - D RA IN 3 - SO U RC E NO TES: 1 D IME N SIO N ING & TO LER A NC ING P ER A NSI Y 14.5M , 1982 2 C O N TR O LLING D IM EN SIO N : IN CH . D C A B M IN IM U M C RE EPA G E D IS TA NC E BETW E EN A -B-C -D = 4.80 (.189) 3X 2.85 (.112) 2.65 (.104) 2.80 (.110) 2.60 (.102) 4.80 ( .189) 4.60 ( .181) 7.10 (.280) 6.70 (.263) 3.40 (.133) 3.10 (.123) ø - A - 3 .70 (.145) 3.20 (.126) 1.15 (.045) M IN . 3.30 (.130) 3.10 (.122) - B - 0 .90 ( .035) 0.70 ( .028) 3X 0.25 (.010) M A M B 2.54 (.100) 2X 3X 13.70 (.540) 13.50 (.530) 16.00 (.630) 15.80 (.622) 1 2 3 10.60 (.417) 10.40 (.409) 1.40 (.055) 1.05 (.042) 0.48 (.019) 0.44 (.017) P A R T N U M B E RIN TE R N A TIO N A L R E C TIF IE R L O G O D A TE C O D E (Y Y W W ) Y Y = YE A R W W = W E E K A S S E M B L Y L O T C O D E E401 9245 IR F I8 40 G E XA M P LE : TH IS IS A N IR F I8 40 G W ITH A S S E M B LY LO T C O D E E 40 1 A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371 Data and specifications subject to change without notice. 3/98

IRLI2910 Reviews

Average User Rating
5 / 5 (71)
★ ★ ★ ★ ★
5 ★
64
4 ★
7
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Houst*****chariah

June 28, 2020

Good seller, incredible reliable.Item as described. Very professional

Brod*****anley

June 27, 2020

They are great as I need, I give 5 stars.

Jagge*****ppard

June 23, 2020

Bought these to help prevent solar panels from feeding back. Works great and doesn't get as hot.

Fran*****owen

June 9, 2020

Worked wonderfully. Went through the instructions to the tea to make sure it was done correctly.

Oma*****Nolan

June 2, 2020

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Kol*****ora

May 30, 2020

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Domi*****Gola

May 27, 2020

Items as described, quick dispatch, took a while with shipment.

Nol*****astro

May 21, 2020

All current moves in switching devices with the proper selection of amp rating capability. I chose these to do a job that had to handle only 1/3 of it's rated capacity. So they were the perfect choice. To date they work as expected; perfectly.

Mina*****tlett

May 16, 2020

I wish I had come across Heisener first, no one could help me for 2 days. You are now saved into the TOP of my favorites web list. Thank you very much.

Lex*****atta

May 14, 2020

Not much to say. Nice and cheap, and haven't had a failure yet.

IRLI2910 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

IRLI2910 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

IRLI2910 Related Products

SIT8209AC-82-25E-161.132800X SIT8209AC-82-25E-161.132800X SiTIME, -20 TO 70C, 7050, 25PPM, 2.5V, 1, -, HEXFET? View
SIT1602BC-11-XXS-50.000000G SIT1602BC-11-XXS-50.000000G SiTIME, -20 TO 70C, 2520, 20PPM, 2.25V-3, -, HEXFET? View
445C32K14M31818 445C32K14M31818 CTS-Frequency Controls, CRYSTAL 14.31818MHZ 8PF SMD, 2-SMD, No Lead, HEXFET? View
XC6124C542ER-G XC6124C542ER-G Torex Semiconductor Ltd, IC WATCHDOG TIMER 6-USP, 6-UFDFN Exposed Pad, HEXFET? View
STSPIN32F0TR STSPIN32F0TR STMicroelectronics, IND & POWER CONV, 48-VFQFN Exposed Pad, HEXFET? View
RLR32C2672FMB14 RLR32C2672FMB14 Vishay Dale, RES 26.7K OHM 1% 1W AXIAL, Axial, HEXFET? View
RG3216V-5100-W-T1 RG3216V-5100-W-T1 Susumu, RES SMD 510 OHM 0.05% 1/4W 1206, 1206 (3216 Metric), HEXFET? View
RNCF2010BTE2K67 RNCF2010BTE2K67 Stackpole Electronics Inc., RES SMD 2.67K OHM 0.1% 1/3W 2010, 2010 (5025 Metric), HEXFET? View
DW-36-10-T-Q-200 DW-36-10-T-Q-200 Samtec Inc., .025" BOARD SPACERS, -, HEXFET? View
165X13489XE 165X13489XE Conec, CONN BACKSHELL DB25, -, HEXFET? View
CN0967C18G11S7-200 CN0967C18G11S7-200 Cinch Connectivity Solutions, CONN RCPT FMALE 11POS GOLD CRIMP, -, HEXFET? View
V24B5T150B2 V24B5T150B2 Vicor Corporation, CONVERTER MOD DC/DC 5V 150W, 9-DIP Module, HEXFET? View
Payment Methods
Delivery Services

Quick Inquiry

IRLI2910

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about IRLI2910?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

IRLI2910 Tags

  • IRLI2910
  • IRLI2910 PDF
  • IRLI2910 datasheet
  • IRLI2910 specification
  • IRLI2910 image
  • Infineon Technologies
  • Infineon Technologies IRLI2910
  • buy IRLI2910
  • IRLI2910 price
  • IRLI2910 distributor
  • IRLI2910 supplier
  • IRLI2910 wholesales

IRLI2910 is Available in