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IRLIZ44GPBF

hot IRLIZ44GPBF

IRLIZ44GPBF

For Reference Only

Part Number IRLIZ44GPBF
Manufacturer Vishay Siliconix
Description MOSFET N-CH 60V 30A TO220FP
Datasheet IRLIZ44GPBF Datasheet
Package TO-220-3 Full Pack, Isolated Tab
In Stock 8012 piece(s)
Unit Price $ 2.99 *
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IRLIZ44GPBF

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IRLIZ44GPBF Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRLIZ44GPBF Datasheet
PackageTO-220-3 Full Pack, Isolated Tab
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25��C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
Vgs (Max)��10V
Power Dissipation (Max)48W (Tc)
Rds On (Max) @ Id, Vgs28 mOhm @ 18A, 5V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

IRLIZ44GPBF Datasheet

Page 1

Page 2

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 1 Power MOSFET IRLIZ44G, SiHLIZ44G Vishay Siliconix FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 518 µH, RG = 25 Ω, IAS = 30 A (see fig. 12c). c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) VGS = 5 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single N-Channel MOSFET G D S SDG TO-220 FULLPAK RoHS COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLIZ44GPbF SiHLIZ44G-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 30 ATC = 100 °C 21 Pulsed Drain Currenta IDM 120 Linear Derating Factor 0.32 W/°C Single Pulse Avalanche Energyb EAS 400 mJ Maximum Power Dissipation TC = 25 °C PD 48 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m

Page 3

www.vishay.com Document Number: 91318 2 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 65 °C/W Maximum Junction-to-Case (Drain) RthJC - 3.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 µA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 18 A b - - 0.028 Ω VGS = 4.0 V ID = 15 A b - - 0.039 Forward Transconductance gfs VDS = 25 V, ID = 18 A b 22 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 3300 - pF Output Capacitance Coss - 1200 - Reverse Transfer Capacitance Crss - 200 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = 5.0 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b - - 66 nC Gate-Source Charge Qgs - - 12 Gate-Drain Charge Qgd - - 43 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, RG = 4.6 Ω, RD= 0.56 Ω, see fig. 10b - 17 - ns Rise Time tr - 230 - Turn-Off Delay Time td(off) - 42 - Fall Time tf - 110 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 30 A Pulsed Diode Forward Currenta ISM - - 120 Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 V b - - 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µs b - 90 180 ns Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

Page 4

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 3 IRLIZ44G, SiHLIZ44G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

Page 5

www.vishay.com Document Number: 91318 4 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

Page 6

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 5 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 5 V + - VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS + - V DD 5 V Vary tp to obtain required IAS IAS VDS VDD VDS tp

Page 7

www.vishay.com Document Number: 91318 6 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge 5 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

Page 8

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 7 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91318. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - * VGS = 5 V for logic level and 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD• dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG

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