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IRLIZ44GPBF

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IRLIZ44GPBF

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Part Number IRLIZ44GPBF
Manufacturer Vishay Siliconix
Description MOSFET N-CH 60V 30A TO220FP
Datasheet IRLIZ44GPBF Datasheet
Package TO-220-3 Full Pack, Isolated Tab
In Stock 8,012 piece(s)
Unit Price $ 2.9900 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 12 - Jul 17 (Choose Expedited Shipping)
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Part Number # IRLIZ44GPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRLIZ44GPBF Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRLIZ44GPBFDatasheet
PackageTO-220-3 Full Pack, Isolated Tab
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
Vgs (Max)��10V
FET Feature-
Power Dissipation (Max)48W (Tc)
Rds On (Max) @ Id, Vgs28 mOhm @ 18A, 5V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

IRLIZ44GPBF Datasheet

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Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 1 Power MOSFET IRLIZ44G, SiHLIZ44G Vishay Siliconix FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 518 µH, RG = 25 Ω, IAS = 30 A (see fig. 12c). c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) VGS = 5 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single N-Channel MOSFET G D S SDG TO-220 FULLPAK RoHS COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLIZ44GPbF SiHLIZ44G-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 30 ATC = 100 °C 21 Pulsed Drain Currenta IDM 120 Linear Derating Factor 0.32 W/°C Single Pulse Avalanche Energyb EAS 400 mJ Maximum Power Dissipation TC = 25 °C PD 48 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m

Page 3

www.vishay.com Document Number: 91318 2 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 65 °C/W Maximum Junction-to-Case (Drain) RthJC - 3.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 µA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 18 A b - - 0.028 Ω VGS = 4.0 V ID = 15 A b - - 0.039 Forward Transconductance gfs VDS = 25 V, ID = 18 A b 22 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 3300 - pF Output Capacitance Coss - 1200 - Reverse Transfer Capacitance Crss - 200 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = 5.0 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b - - 66 nC Gate-Source Charge Qgs - - 12 Gate-Drain Charge Qgd - - 43 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, RG = 4.6 Ω, RD= 0.56 Ω, see fig. 10b - 17 - ns Rise Time tr - 230 - Turn-Off Delay Time td(off) - 42 - Fall Time tf - 110 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 30 A Pulsed Diode Forward Currenta ISM - - 120 Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 V b - - 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µs b - 90 180 ns Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

Page 4

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 3 IRLIZ44G, SiHLIZ44G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

Page 5

www.vishay.com Document Number: 91318 4 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

Page 6

Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 5 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 5 V + - VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS + - V DD 5 V Vary tp to obtain required IAS IAS VDS VDD VDS tp

Page 7

www.vishay.com Document Number: 91318 6 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge 5 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

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Document Number: 91318 www.vishay.com S09-0037-Rev. A, 19-Jan-09 7 IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91318. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - * VGS = 5 V for logic level and 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD• dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG

IRLIZ44GPBF Reviews

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June 28, 2020

The best choice, clear and easy to make an order. Gives me full control.

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June 20, 2020

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Vince*****earson

June 18, 2020

The capacitors were exactly the ones I wanted. Perfect fit.

Sofi*****akta

June 13, 2020

No problem in making an order and will see how the shipping goes.

Ind*****Bowen

June 11, 2020

Very pleased with the parts from this company. First class service. Thanks!

Jame*****Nava

May 22, 2020

They were easy to work with and did what I expected.

Kasht*****ugherty

May 20, 2020

You get the most update products online. You always give me the best choice.

Amaya*****gherty

May 16, 2020

Worked perfectly for my application. Worked like a charm!

Ell*****Ghosh

May 14, 2020

There are cheaper ones out there but this one really take the guessing game out.

Josi*****llard

May 13, 2020

Work great, great price, I use a lot of them for battery chargers, not the first time ordered.

IRLIZ44GPBF Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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