IRLML6402TRPBF

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Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100  HEXFETPower MOSFET These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Thermal Resistance VDSS = -20V RDS(on) = 0.065Ω  Ultra Low On-Resistance  P-Channel MOSFET  SOT-23 Footprint  Low Profile (<1.1mm)  Available in Tape and Reel  Fast Switching  Lead-Free  RoHS Compliant, Halogen-Free    Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A IDM Pulsed Drain Current  -22 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C EAS Single Pulse Avalanche Energy 11 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C      Micro3™ S G 1 2 D3   Form Quantity IRLML6402TRPbF Micro3™ (SOT-23) Tape and Reel 3000 IRLML6402TRPbF Package Type Standard Pack Orderable Part NumberBase Part Number         ! "#$ %&

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        ! "#$ %&   Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400μs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -22 # S D G ''For recommended footprint and soldering techniques refer to application note #AN-994.  !() *+,  $$ !& !+ Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA  ––– 0.050 0.065 VGS = -4.5V, ID = -3.7A  ––– 0.080 0.135 VGS = -2.5V, ID = -3.1A  VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A  ––– ––– -1.0 VDS = -20V, VGS = 0V ––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 8.0 12 ID = -3.7A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V  td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V tr Rise Time ––– 48 ––– ID = -3.7A td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω tf Fall Time ––– 381 ––– RD = 2.7Ω Ciss Input Capacitance ––– 633 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  -# ΩRDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current # 

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.        ! "#$ %&   Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 0.1 1 10 100 20μs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -V , Drain-to-Source Voltage (V) -I , D ra in -t o- S ou rc e C ur re nt ( A ) DS D -2.25V 1 10 100 0.1 1 10 100 20μs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -V , Drain-to-Source Voltage (V) -I , D ra in -t o- S ou rc e C ur re nt ( A ) DS D -2.25V 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V = -15V 20μs PULSE WIDTH DS -V , Gate-to-Source Voltage (V) -I , D ra in -t o- S ou rc e C ur re nt ( A ) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature ( C) R , D ra in -t o- S ou rc e O n R es is ta nc e (N or m al iz ed ) J D S (o n) ° V = I = GS D -4.5V -3.7A

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        ! "#$ %&   Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 1 10 100 0.1 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° °J C -V , Drain-to-Source Voltage (V) -I , D ra in C ur re nt ( A ) I , D ra in C ur re nt ( A ) DS D 10us 100us 1ms 10ms 1 10 100 VDS, Drain-to-Source Voltage (V) 0 200 400 600 800 1000 C , C ap ac ita nc e( pF ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 3 6 9 12 0 2 4 6 8 10 Q , Total Gate Charge (nC) -V , G at e- to -S ou rc e V ol ta ge ( V ) G G S FOR TEST CIRCUIT SEE FIGURE I =D 13 -3.7A V =-10VDS 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -V ,Source-to-Drain Voltage (V) -I , R ev er se D ra in C ur re nt ( A ) SD S D V = 0 V GS T = 25 CJ ° T = 150 CJ °

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/        ! "#$ %&   Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 T , Case Temperature ( C) -I , D ra in C ur re nt ( A ) °C D 25 50 75 100 125 150 0 5 10 15 20 25 Starting T , Junction Temperature ( C) E , S in gl e P ul se A va la nc he E ne rg y (m J) J A S ° ID TOP BOTTOM -1.7A -3.0A -3.7A 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM 1 2 t , Rectangular Pulse Duration (sec) T he rm al R es po ns e (Z ) 1 th JA 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

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0        ! "#$ %&   Fig 13. Typical On-Resistance Vs. Drain Current Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 3.0 4.0 5.0 6.0 7.0 -VGS, Gate -to -Source Voltage ( V ) 0.02 0.04 0.06 0.08 0.10 0.12 0.14 R D S (o n) , D ra in -t o -S ou rc e V ol ta ge ( Ω ) Id = -3.7A 0 5 10 15 20 25 30 -ID , Drain Current ( A ) 0.00 0.04 0.08 0.12 0.16 0.20 R D S ( o n ) , D ra in -t o- S ou rc e O n R es is ta nc e ( Ω ) VGS = -4.5V VGS = -2.5V

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1        ! "#$ %&   Micro3 (SOT-23 / TO-236AB) Part Marking Information               0.08 0.88 0.01 0.89 0.95 BSC MILLIMETERS MIN e E E1 D L A A1 A2 c M O B S Y MINMAX MAX .036 .0375 BSC DIMENSIONS INCHES b 0.30 bbb 0.15 .008 ccc .006 0.25 BS CL1 L 0.40 0.60 .0118 BSC aaa 0.20 .004 0° 8° 8°0° 2.80 1.20 0 E1 E D 5 6 3 1 2 ccc C B A B 5 6 e e1 A2A A1 bbb C A B 3X b aaa C 3 S URF 0 3X L L1 H4 7 2.10 e1 1.90 BSC .075 BSC .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236.0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] RECOMMENDED FOOTPRINT 3X 3X NOTES 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 4 DATUM PLANE H IS LOCATED AT THE MOLD PART ING LINE. 5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. 2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES. 3. CONTROLLING DIMENSION: MILLIMETER. 7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB. F = IRLML6401 A2001 A27 Notes: This part marking information applies to devices produced after 02/26/2001 ASSEMBLY LOT CODE LEAD-FREE DATE CODE E = IRLML6402 X = PART NUMBER CODE REFERENCE: D = IRLML5103 C = IRLML6302 B = IRLML2803 A = IRLML2402 W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR W = (27-52) IF PRECEDED BY A LETTER Y 82008 32003 12001 YEAR 2002 2 52005 2004 4 2007 2006 7 6 2010 0 2009 9 YEAR Y C03 WORK WEEK 01 02 A W B 04 D 24 26 25 X Z Y WORK WEEK WH = IRLML5203 G = IRLML2502 K H G F E D C B 2006 2003 2002 2005 2004 2008 2007 2010 2009 J Y51 29 28 30 C B D 50 X I = IRLML0030 J = IRLML2030 L = IRLML0060 M = IRLML0040 K = IRLML0100 N = IRLML2060 P = IRLML9301 R = IRLML9303 Cu WIRE HALOGEN FREE PART NUMBER 52 Z DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 W = IRFML8244 V = IRLML6346 U = IRLML6344 T = IRLML6246 S = IRLML6244 Y = IRLML2246 X = IRLML2244 Z = IRFML9244            

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%        ! "#$ %&   ™                  2.05 ( .080 ) 1.95 ( .077 ) TR FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.