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IRLR120PBF

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IRLR120PBF

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Part Number IRLR120PBF
Manufacturer Vishay Siliconix
Description MOSFET N-CH 100V 7.7A DPAK
Datasheet IRLR120PBF Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 65,000 piece(s)
Unit Price $ 1.2600 *
Lead Time Can Ship Immediately
Estimated Delivery Time Oct 29 - Nov 3 (Choose Expedited Shipping)
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Part Number # IRLR120PBF (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IRLR120PBF specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IRLR120PBF with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IRLR120PBF.

IRLR120PBF Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRLR120PBFDatasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
Vgs (Max)��10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs270 mOhm @ 4.6A, 5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

IRLR120PBF Datasheet

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 1 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120, SiHLR120) • Straight Lead (IRLU120, SiHLU120) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 100 RDS(on) () VGS = 5.0 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR120-GE3 SiHLR120TRL-GE3 SiHLR120TR-GE3 SiHLR120TRR-GE3 SiHLU120-GE3 Lead (Pb)-free IRLR120PbF IRLR120TRLPbFa IRLR120TRPbFa IRLR120TRRPbFa IRLU120PbF SiHLR120-E3 SiHLR120TL-E3a SiHLR120T-E3a SiHLR120TR-E3a SiHLU120-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TC = 25 °C ID 7.7 ATC = 100 °C 4.9 Pulsed Drain Currenta IDM 31 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 210 mJ Repetitive Avalanche Currenta IAR 7.7 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 260

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 2 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 3.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 μA VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 4.6 A b - - 0.27  VGS = 4.0 V ID = 3.9 A b - - 0.38 Forward Transconductance gfs VDS = 50 V, ID = 4.6 A b 4.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 490 - pFOutput Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 30 - Total Gate Charge Qg VGS = 5.0 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b - - 12 nC Gate-Source Charge Qgs - - 3.0 Gate-Drain Charge Qgd - - 7.1 Turn-On Delay Time td(on) VDD = 50 V, ID = 9.2 A, Rg = 9.0 , RD = 5.2 , see fig. 10b - 9.8 - ns Rise Time tr - 64 - Turn-Off Delay Time td(off) - 21 - Fall Time tf - 27 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contactc - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - 7.7 A Pulsed Diode Forward Currenta ISM - - 31 Body Diode Voltage VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 V b - - 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - 110 140 ns Body Diode Reverse Recovery Charge Qrr - 0.80 1.0 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 3 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 4 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 5 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 5.0 V + - VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 6 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ωtp D.U.T L VDS + - V DD 5.0 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 7 Document Number: 91324 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91324. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V a ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + +- - - Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD

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Package Information www.vishay.com Vishay Siliconix Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-252AA Case Outline Notes • Dimension L3 is for reference only. L 3 D L 4 L 5 b b2 e1 E1 D 1 C A1 g a g e p la n e h e ig h t (0 .5 m m ) e b3 E C2 A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347

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Document Number: 91362 www.vishay.com Revision: 15-Sep-08 1 Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C D A c2 c Lead tip 5 5 (Datum A) Thermal PADE1 4D1 View A - A A1 A A C Seating plane C C B B θ1θ2 B 4 4 4 3 5 L1 L L3 3 x b2 3 x b 3 b4 E 2 x e 0.010 C BM A0.25 0.010 BA0.25 L2 A CM MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 - b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968

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August 22, 2020

Very pleased with the parts from this company. First class service. Thanks!

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August 6, 2020

Bought these to help prevent solar panels from feeding back. Works great and doesn't get as hot.

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August 6, 2020

I am very happy with how Heisener do business. Will definitely buy their products in the future as I have confidence in their customer service.

Marv*****arsen

August 5, 2020

This product is very easy to replace and solved my problem.

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July 30, 2020

Great price. Worked well for my needs.

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July 28, 2020

You're my good supplier. I appreciate Heisener Electronics on many levels.

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