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ISL89401ABZ

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ISL89401ABZ

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Part Number ISL89401ABZ
Manufacturer Renesas Electronics America
Description IC DRVR H-BRDG 100V 1.25A 8SOIC
Datasheet ISL89401ABZ Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 315 piece(s)
Unit Price $ 1.6766 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # ISL89401ABZ (PMIC - Gate Drivers) is manufactured by Renesas Electronics America and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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ISL89401ABZ Specifications

ManufacturerRenesas Electronics America
CategoryIntegrated Circuits (ICs) - PMIC - Gate Drivers
Datasheet ISL89401ABZDatasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
Driven ConfigurationHalf-Bridge
Channel TypeIndependent
Number of Drivers2
Gate TypeN-Channel MOSFET
Voltage - Supply9 V ~ 14 V
Logic Voltage - VIL, VIH1.4V, 2.2V
Current - Peak Output (Source, Sink)1.25A, 1.25A
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)100V
Rise / Fall Time (Typ)16ns, 16ns
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

ISL89401ABZ Datasheet

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FN6614 Rev 3.00 December 4, 2015 ISL89400, ISL89401 100V, 1.25A Peak, High Frequency Half-Bridge Drivers DATASHEETThe ISL89400, ISL89401 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL89400 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL89401 (like those of the ISL89400) can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package and an 8 Ld SOIC to minimize the required PCB footprint. Applications • Telecom half-bridge converters • Telecom full-bridge converters • Two-switch forward converters • Active-clamp forward converters • Class-D audio amplifiers Features • Drives N-channel MOSFET half-bridge • Space saving DFN package • DFN package compliant with 100V conductor spacing guidelines per IPC-2221 • Pb-free (RoHS compliant) • Bootstrap supply maximum voltage to 114VDC • On-chip 1Ω bootstrap diode • Fast propagation times for multi-MHz circuits • Drives 1nF load with typical rise/fall times of 16ns • CMOS compatible input thresholds (ISL89400) • 3.3V/TTL compatible input thresholds (ISL89401) • Independent inputs provide flexibility • No start-up problems • Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dV/dt • Low power consumption • Wide supply voltage range (9V to 14V) • Supply undervoltage protection • 4.0Ω typical output pull-up/pull-down resistance TABLE 1. KEY DIFFERENCES BETWEEN FAMILY OF PARTS PART NUMBER INPUT THRESHOLDS ISL89400 CMOS Compatible ISL89401 3.3V/TTL Compatible Application Block Diagram FIGURE 1. APPLICATION BLOCK DIAGRAM SECONDARY CIRCUIT +100V C O N T R O L CONTROLLER PWM LI HI HO LO VDD HS HB +12V VSS REFERENCE AND ISOLATION DRIVE LO DRIVE HI ISL89400 ISL89401FN6614 Rev 3.00 Page 1 of 12 December 4, 2015

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ISL89400, ISL89401Ordering Information PART NUMBER (Notes 3, 4) PART MARKING TEMP. RANGE (°C) PACKAGE (RoHS Compliant) PKG. DWG. # ISL89400AR3Z (Note 1) 9400 -40 to +125 9 Ld 3x3 DFN L9.3x3 ISL89401AR3Z (Note 1) 9401 -40 to +125 9 Ld 3x3 DFN L9.3x3 ISL89400ABZ (Note 2) 89400 ABZ -40 to +125 8 Ld SOIC M8.15 ISL89401ABZ (Note 2) 89401 ABZ -40 to +125 8 Ld SOIC M8.15 NOTES: 1. Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. Add “-T” suffix for 2.5k unit or add “-TK” suffix for 1k unit tape and reel. Please refer to TB347 for details on reel specifications. 3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 4. For Moisture Sensitivity Level (MSL), please see product information page for ISL89400, ISL89401. For more information on MSL, please see tech brief TB363. Pin Configurations ISL89400, ISL89401 (8 LD SOIC) TOP VIEW ISL89400, ISL89401 (9 LD DFN) TOP VIEW 5 6 8 7 4 3 2 1VDD HB HO HS LO LI HI VSS VDD HB HO HS LO VSS LI HI NC EPAD2 3 1 4 8 7 6 9 5 NOTE: EPAD = Exposed PAD. Pin Descriptions SYMBOL DESCRIPTION VDD Positive supply to lower gate driver. Bypass this pin to VSS. HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-side output. Connect to gate of high-side power MOSFET. HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input. LI Low-side input. VSS Chip negative supply, which will generally be ground. LO Low-side output. Connect to gate of low-side power MOSFET. NC No connect. EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.FN6614 Rev 3.00 Page 2 of 12 December 4, 2015

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ISL89400, ISL89401Functional Block Diagram FIGURE 2. FUNCTIONAL BLOCK DIAGRAM UNDERVOLTAGE VDD HI LI VSS DRIVER DRIVER HB HO HS LO LEVEL SHIFT UNDERVOLTAGE EPAD (DFN PACKAGE ONLY) ISL89401 ISL89401 *EPAD = EXPOSED PAD. THE EPAD IS ELECTRICALLY ISOLATED FROM ALL OTHER PINS. FOR BEST THERMAL PERFORMANCE, CONNECT THE EPAD TO THE PCB POWER GROUND PLANE.FN6614 Rev 3.00 Page 3 of 12 December 4, 2015

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ISL89400, ISL89401FIGURE 3. TWO-SWITCH FORWARD CONVERTER FIGURE 4. FORWARD CONVERTER WITH AN ACTIVE-CLAMP SECONDARY ISOLATION PWM +48V +12V CIRCUIT ISL89400 ISL89401 SECONDARY CIRCUIT ISOLATION PWM +48V +12V ISL89400 ISL89401FN6614 Rev 3.00 Page 4 of 12 December 4, 2015

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ISL89400, ISL89401Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB - VHS (Note 6). . . . . . . . . . . . . . . . . . -0.3V to 18V LI and HI Voltages (Note 6) . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on LO (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on HO (Note 6) . . . . . . . . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V Voltage on HS (Continuous) (Note 6) . . . . . . . . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Maximum Recommended Operating Conditions Supply Voltage, VDD (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . . . . . . . . VHS + 8V to VHS + 14V and VDD - 1V to VDD + 100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 9 Ld DFN (Notes 7, 9). . . . . . . . . . . . . . . . . . 55 3.5 8 Ld SOIC (Note 8, 10) . . . . . . . . . . . . . . . . . 107 50 Max Power Dissipation at +25°C in Free Air (Note 7). . . . . . . . . . . . . . 2.27W Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .see link TB493 CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 5. The ISL89400 and ISL89401 are capable of derated operation at supply voltages exceeding 14V. Figure 24 shows the high-side voltage derating curve for this mode of operation. 6. All voltages referenced to VSS, unless otherwise specified. 7. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.See Tech Brief TB379. 8. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 9. For JC, the “case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379 for details. 10. For JC, the “case temp” location is taken at the package top center. Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits at –40°C and +125°C are established by characterization and are not production tested. PARAMETERS SYMBOL TEST CONDITIONS TJ = +25°C TJ = -40°C to +125°C UNITMIN TYP MAX MIN MAX SUPPLY CURRENTS VDD Quiescent Current IDD ISL89400; LI = HI = 0V - 0.1 0.25 - 0.3 mA VDD Quiescent Current IDD ISL89401; LI = HI = 0V - 0.3 0.45 - 0.55 mA VDD Operating Current IDDO ISL89400; f = 500kHz - 1.6 2.2 - 2.7 mA VDD Operating Current IDDO ISL89401; f = 500kHz - 1.9 2.5 - 3 mA Total HB Quiescent Current IHB LI = HI = 0V - 0.1 0.15 - 0.2 mA Total HB Operating Current IHBO f = 500kHz - 2.0 2.5 - 3 mA HB to VSS Current, Quiescent IHBS LI = HI = 0V; VHB = VHS = 114V - 0.05 1 - 10 µA HB to VSS Current, Operating IHBSO f = 500kHz; VHB = VHS = 114V - 0.9 - - - mA INPUT PINS Low Level Input Voltage Threshold VIL ISL89400 3.7 4.4 - 2.7 - V Low Level Input Voltage Threshold VIL ISL89401 1.4 1.8 - 1.2 - V High Level Input Voltage Threshold VIH ISL89400 - 6.6 7.4 - 8.4 V High Level Input Voltage Threshold VIH ISL89401 - 1.8 2.2 - 2.4 V Input Voltage Hysteresis VIHYS ISL89400 - 2.2 - - - V Input Pull-Down Resistance RI - 210 - 100 500 kΩFN6614 Rev 3.00 Page 5 of 12 December 4, 2015

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ISL89400, ISL89401UNDERVOLTAGE PROTECTION VDD Rising Threshold VDDR 6.8 7.3 7.8 6.5 8.1 V VDD Threshold Hysteresis VDDH - 0.6 - - - V HB Rising Threshold VHBR 6.2 6.9 7.5 5.9 7.8 V HB Threshold Hysteresis VHBH - 0.6 - - - V BOOTSTRAP DIODE Low Current Forward Voltage VDL IVDD-HB = 100µA - 0.5 0.6 - 0.7 V High Current Forward Voltage VDH IVDD-HB = 100mA - 0.7 0.9 - 1 V Dynamic Resistance RD IVDD-HB = 100mA - 0.8 1 - 1.5 Ω LO GATE DRIVER Low Level Output Voltage VOLL ILO = 100mA - 0.4 0.5 - 0.7 V High Level Output Voltage VOHL ILO = -100mA, VOHL = VDD - VLO - 0.4 0.5 - 0.7 V Peak Pull-Up Current IOHL VLO = 0V - 1.25 - - - A Peak Pull-Down Current IOLL VLO = 12V - 1.25 - - - A HO GATE DRIVER Low Level Output Voltage VOLH IHO = 100mA - 0.4 0.5 - 0.7 V High Level Output Voltage VOHH IHO = -100mA, VOHH = VHB - VHO - 0.4 0.5 - 0.7 V Peak Pull-Up Current IOHH VHO = 0V - 1.25 - - - A Peak Pull-Down Current IOLH VHO = 12V - 1.25 - - - A Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits at –40°C and +125°C are established by characterization and are not production tested. (Continued) PARAMETERS SYMBOL TEST CONDITIONS TJ = +25°C TJ = -40°C to +125°C UNITMIN TYP MAX MIN MAX Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits at –40°C and +125°C are established by characterization and are not production tested. PARAMETERS SYMBOL TEST CONDITIONS TJ = +25°C TJ = -40°C to +125°C UNITMIN TYP MAX MIN MAX Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL - 34 50 - 60 ns Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL - 31 50 - 60 ns Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH - 39 50 - 60 ns Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH - 39 50 - 60 ns Delay Matching: Upper Turn-Off to Lower Turn-On tMON 1 8 - - 16 ns Delay Matching: Lower Turn-Off to Upper Turn-On tMOFF 1 6 - - 16 ns Either Output Rise/Fall Time (10% to 90%/90% to 10%) tRC,tFC CL = 1nF - 16 - - - ns Either Output Rise/Fall Time (3V to 9V/9V to 3V) tR,tF CL = 0.1µF - 0.8 1.0 - 1.2 µs Minimum Input Pulse Width that Changes the Output tPW - - - - 50 ns Bootstrap Diode Turn-On or Turn-Off Time tBS - 10 - - - nsFN6614 Rev 3.00 Page 6 of 12 December 4, 2015

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ISL89400, ISL89401Timing Diagrams FIGURE 5. PROPAGATION DELAYS FIGURE 6. DELAY MATCHING tHPLH, tLPLH tHPHL, tLPHL HI, LI HO, LO tMON tMOFF LI HI LO HO Typical Performance Curves FIGURE 7. ISL89400 IDD OPERATING CURRENT vs FREQUENCY FIGURE 8. ISL89401 IDD OPERATING CURRENT vs FREQUENCY FIGURE 9. IHB OPERATING CURRENT vs FREQUENCY FIGURE 10. IHBS OPERATING CURRENT vs FREQUENCY 10k 100k 0.1 1.0 10.0 FREQUENCY (Hz) I D D O ( m A ) 1M T = -40°C T = +25°C T = +150°C T = +125°C 10k 100k 0.1 1.0 10.0 FREQUENCY (Hz) I D D O ( m A ) 1M T = -40°C T = +25°C T = +125°C T = +150°C 10k 100k 1M 0.01 0.10 1.00 10.00 FREQUENCY (Hz) I H B O ( m A ) T = -40°C T = +25°C T = +150°C T = +125°C 10k 100k 1M 0.01 0.10 1.00 10.00 FREQUENCY (Hz) I H B O ( m A ) T = +150°C T = +125°C T = -40°C T = +25°CFN6614 Rev 3.00 Page 7 of 12 December 4, 2015

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ISL89400, ISL89401FIGURE 11. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 12. LOW LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 13. UNDERVOLTAGE LOCKOUT THRESHOLD vs TEMPERATURE FIGURE 14. UNDERVOLTAGE LOCKOUT HYSTERESIS vs TEMPERATURE FIGURE 15. ISL89400 PROPAGATION DELAYS vs TEMPERATURE FIGURE 16. ISL89401 PROPAGATION DELAYS vs TEMPERATURE Typical Performance Curves (Continued) -50 0 50 100 150 150 200 250 300 350 400 450 500 TEMPERATURE (°C) V O L L , V O L H ( m V ) VDD = VHB = 12V VDD = VHB = 14V VDD = VHB = 9V -50 0 50 100 150 150 200 250 300 350 400 450 TEMPERATURE (°C) V O L L , V O L H ( m V ) VDD = VHB = 9V VDD = VHB = 12V VDD = VHB = 14V -50 0 50 100 150 6.8 7.0 7.2 7.4 7.6 VDDR VHBR TEMPERATURE (°C) V D D R , V H B R ( V ) -50 0 50 100 150 0.40 0.45 0.50 0.55 0.60 VDDH VHBH TEMPERATURE (°C) V D D H , V H B H ( V ) -50 0 50 100 150 20 25 30 35 40 45 50 55 tLPLH TEMPERATURE (°C) t L P L H , t L P H L , t H P L H , t H P H L ( n s ) tLPHL tHPLH tHPHL -50 0 50 100 150 20 25 30 35 40 45 50 55 TEMPERATURE (°C) t L P L H , t L P H L , t H P L H , t H P H L ( n s ) tLPLH tLPHL tHPLH tHPHLFN6614 Rev 3.00 Page 8 of 12 December 4, 2015

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ISL89400, ISL89401FIGURE 17. ISL89400 DELAY MATCHING vs TEMPERATURE FIGURE 18. ISL89401 DELAY MATCHING vs TEMPERATURE FIGURE 19. PEAK PULL-UP CURRENT vs OUTPUT VOLTAGE FIGURE 20. PEAK PULL-DOWN CURRENT vs OUTPUT VOLTAGE FIGURE 21. ISL89400 QUIESCENT CURRENT vs VOLTAGE FIGURE 22. ISL89401 QUIESCENT CURRENT vs VOLTAGE Typical Performance Curves (Continued) -50 0 50 100 150 3 4 5 6 7 8 9 10 tMON tMOFF TEMPERATURE (°C) t M O N , t M O F F ( n s ) -50 0 50 100 150 2 3 4 5 6 7 8 9 10 TEMPERATURE (°C) t M O N , t M O F F ( n s ) tMON tMOFF 0 6 8 10 12 0 0.25 0.50 0.75 1.00 1.25 VLO, VHO (V) I O H L , I O H H ( A ) 2 4 0 4 6 8 10 12 0 0.25 0.50 0.75 1.00 1.25 VLO, VHO (V) I O L L , I O L H ( A ) 2 0 5 10 15 20 0 20 40 60 80 100 120 140 160 180 200 220 240 260 VDD, VHB (V) I D D , I H B ( µ A ) IHB IDD 0 5 10 15 20 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 VDD, VHB (V) I D D , I H B ( µ A ) IHB IDDFN6614 Rev 3.00 Page 9 of 12 December 4, 2015

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