IXDI404PI

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Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two Drivers in Single Chip Applications • Driving MOSFETs and IGBTs • Motor Controls • Line Drivers • Pulse Generators • Local Power ON/OFF Switch • Switch Mode Power Supplies (SMPS) • DC to DC Converters • Pulse Transformer Driver • Class D Switching Amplifiers • Limiting di/dt Under Short Circuit IXDN404 / IXDI404 / IXDF404 First Release Copyright © IXYS CORPORATION 2004 General Description The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates CMOS power supply cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. The IXDN404 is configured as a dual non-inverting gate driver, the IXDI404 is a dual inverting gate driver, and the IXDF404 is a dual inverting + non-inverting gate driver. The IXDN404/IXDI404/IXDF404 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available in a package with an exposed grounded metal back as the SI and SI-16 repectively. 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Part Number Package Type Temp. Range Configuration IXDN404PI 8-Pin PDIP IXDN404SI 8-Pin SOIC with Grounded Metal Back IXDN404SIA 8-Pin SOIC IXDN404SI-16 16-Pin SOIC with Grounded Metal Back IXDN404SIA-16 16-Pin SOIC -55°C to +125°C Dual Non Inverting IXDI404PI 8-Pin PDIP IXDI404SI 8-Pin SOIC with Grounded Metal Back IXDI404SIA 8-Pin SOIC IXDI404SI-16 16-Pin SOIC with Grounded Metal Back IXDI404SIA-16 16-Pin SOIC -55°C to +125°C Dual Inverting IXDF404PI 8-Pin PDIP IXDF404SI 8-Pin SOIC with Grounded Metal Back IXDF404SIA 8-Pin SOIC IXDF404SI-16 16-Pin SOIC with Grounded Metal Back IXDF404SIA-16 16-Pin SOIC -55°C to +125°C Inverting + Non Inverting Ordering Information NOTE: Mounting or solder tabs on all packages are connected to ground DS99018D(11/10)

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2 IXDN404 / IXDI404 / IXDF404 Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram N P N P OUT A Vcc OUT B IN A IN B GND ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * N P N P OUT A Vcc OUT B IN A IN B GND ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * * Patent Pending N P N P OUT A Vcc OUT B IN A IN B GND ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram

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3 IXDN404 / IXDI404 / IXDF404 Unless otherwise noted, T A = 25 oC, 4.5V ≤ V CC ≤ 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.5 V VIL Low input voltage 4.5V ≤ VCC ≤ 18V 0.8 V VIN Input voltage range -5 VCC + 0.3 V IIN Input current 0V ≤ VIN ≤ VCC -10 10 µA VOH High output voltage VCC - 0.025 V VOL Low output voltage 0.025 V ROH Output resistance @ Output High VCC = 18V 2 2.5 Ω ROL Output resistance @ Output Low VCC = 18V 1.5 2 Ω IPEAK Peak output current VCC = 18V 4 A IDC Continuous output current 1 A tR Rise time CL=1800pF Vcc=18V 16 18 ns tF Fall time CL=1800pF Vcc=18V 13 17 ns tONDLY On-time propagation delay CL=1800pF Vcc=18V 36 40 ns tOFFDLY Off-time propagation delay CL=1800pF Vcc=18V 35 39 ns VCC Power supply voltage 4.5 18 35 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = + VCC 1 0 3 10 10 mA µA µA Absolute Maximum Ratings (Note 1) Parameter Value Supply Voltage 40V All Other Pins -0.3V to VCC + 0.3V Junction Temperature 150oC Storage Temperature -65oC to 150oC Soldering Lead Temperature (10 seconds maximum) 300oC Operating Ratings Specifications Subject To Change Without Notice Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Thermal Resistance (To Ambient) 8 Pin PDIP (PI) (θ JA ) 120 K/W 8 Pin SOIC (SIA) 110 K/W 16 Pin SOIC (SIA-16) (θ JA ) 110 K/W θ JA with heat sink ** Heat sink area of 1 cm2 8 Pin SOIC 95 K/W 16 Pin SOIC-CT 95 K/W Heat sink area of 3 cm 2 8 Pin SOIC 85 K/W 16 Pin SOIC-CT 85 K/W ** Device soldered to metal back pane. Heat sink area is 1 oz. copper on 1 side of 0.06" thick FR4 PC board. Parameter Value Operating Temperature Range -55 oC to 125 oC Thermal Resistance (Junction to Case) (θ JC ) 8 Pin SOIC (SI) 16 Pin SOIC (SI-16) 10 K/W 10 K/W

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4 IXDN404 / IXDI404 / IXDF404 Symbol Parameter Test Conditions Min Typ Max Units VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.4 V VIL Low input voltage 4.5V ≤ VCC ≤ 18V 0.8 V VIN Input voltage range -5 VCC + 0.3 V IIN Input current 0V ≤ VIN ≤ VCC -10 10 µA VOH High output voltage VCC - 0.025 V VOL Low output voltage 0.025 V ROH Output resistance @ Output High VCC = 18V 3.4 Ω ROL Output resistance @ Output Low VCC = 18V 2 Ω IPEAK Peak output current VCC = 18V 3.2 A IDC Continuous output current 1 A tR Rise time CL=1000pF Vcc=18V 11 ns tF Fall time CL=1000pF Vcc=18V 13 ns tONDLY On-time propagation delay CL=1000pF Vcc=18V 60 ns tOFFDLY Off-time propagation delay CL=1000pF Vcc=18V 59 ns VCC Power supply voltage 4.5 18 35 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = + VCC 1 0 3 10 10 mA µA µA Electrical Characteristics Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ V CC ≤ 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Specifications Subject To Change Without Notice

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5 IXDN404 / IXDI404 / IXDF404 Pin Description SYMBOL FUNCTION DESCRIPTION IN A A Channel Input A Channel Input signal-TTL or CMOS compatible. GND Ground The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. IN B B Channel Input B Channel Input signal-TTL or CMOS compatible. OUT B B Channel Output B Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. VCC Supply Voltage Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 35V. OUT A A Channel Output A Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. Figure 4 - Characteristics Test Diagram CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. 1 2 3 4 5 6 7 8NC NC In A Gnd In B Out B Vcc Out A 10uF 25V Vcc 1800 pF1800 pF Agilent 1147A Current Probe Agilent 1147A Current Probe

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6 IXDN404 / IXDI404 / IXDF404 Output Fall Times vs. Load Capacitance 0 10 20 30 40 50 60 70 80 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Load Capacitance (pF) F a ll T im e ( n s ) 8V 10V 12V 18V 25V 35V Fall Times vs. Supply Voltage 0 10 20 30 40 50 60 70 80 5 10 15 20 25 30 35 Supply Voltage (V) F a ll T im e s ( n s ) 200pF 1000pF 1800pF 4700pF 6800pF 10000pF Rise Times vs. Supply Voltage 0 10 20 30 40 50 60 70 80 5 10 15 20 25 30 35 Supply Voltage (V) R is e T im e ( n s ) 200pF 1000pF 1800pF 4700pF 6800pF 10000pF Output Rise Times vs. Load Capacitance 0 10 20 30 40 50 60 70 80 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Load Capacitance (pF) R is e T im e ( n s ) 8V 10V 12V 18V 25V 35V Rise And Fall Times vs. Temperature CL = 1000pF, Vcc = 18V 0 2 4 6 8 10 12 14 -60 -10 40 90 140 190 Temperature (C) T im e ( n s ) tF tR Typical Performance Characteristics Fig. 5 Fig. 6 Fig. 7 Fig. 8 Fig. 9 Fig. 10 Max / Min Input vs. Temperature CL = 1000pF, Vcc = 18V 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 -60 -10 40 90 140 190 Temperature (C) M a x / M in I n p u t V o lt a g e Min Input High Max Input Low

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7 IXDN404 / IXDI404 / IXDF404 Supply Current vs. Frequency Vcc = 18V 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 Frequency (kHz) S u p p ly C u rr e n t (m a ) 200 pF 1000 pF 1800 pF 6800 pF 10000 pF 4700 pF Supply Current vs. Frequency Vcc = 8V 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 Frequency (kHz) S u p p ly C u rr e n t (m a ) 200 pF 1000 pF 1800 pF 4700 pF 6800 pF 10000 pF Supply Current vs. Frequency Vcc = 12V 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 Frequency (kHz) S u p p ly C u rr e n t (m a ) 200 pF 1000 pF 1800 pF 4700 pF 6800 pF 10000 pF Supply Current vs. Load Capacitance Vcc = 12V 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 Load Capacitance (pF) S u p p ly C u rr e n t (m A ) 10 kHz 50 kHz 100 kHz 500 kHz 1 Mhz 2 MHz Supply Current vs. Load Capacitance Vcc = 18V 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 Load Capacitance (pF) S u p p ly C u rr e n t (m A ) 10 kHz 50 kHz 100 kHz 500 kHz1 MHz 2 MHz Supply Current vs. Load Capacitance Vcc = 8V 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 Load Capacitance (pF) S u p p ly C u rr e n t (m A ) 10 kHz 50 kHz Hz 100 kHz 500 kHz 1 MHz 2 MHz Fig. 12 Fig. 14 Fig. 16 Fig. 11 Fig. 13 Fig. 15

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8 IXDN404 / IXDI404 / IXDF404 Supply Current vs. Load Capacitance Vcc = 35V 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 Load Capacitance (pF) S u p p ly C u rr e n t (m A ) 10 kHz 50 kHz 100 kHz 1 MHz 500 kHz 2 MHz Propagation Delay Times vs. Temperature CL = 1000pF, Vcc = 18V 20 25 30 35 40 45 50 55 60 -60 -10 40 90 140 190 Temperature (C) T im e ( n s ) tONDLY tOFFDLY Supply Current vs. Frequency Vcc = 35V 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 Frequency (kHz) S u p p ly C u rr e n t (m A ) 200 pF 1000 pF 1800 pF 4700 pF 6800 pF 10000 pF Propagation Delay vs. Input Voltage CL = 1800pF Vcc = 15V 20 25 30 35 40 45 50 2 4 6 8 10 12 Input Voltage (V) P ro p a g a ti o n D e la y ( n s ) tONDLY tOFFDLY Propagation Delay vs. Supply Voltage CL = 1800pF Vin = 5V@1kHz 0 10 20 30 40 50 60 70 5 10 15 20 25 30 35 Supply Voltage (V) P ro p a g a ti o n D e la y ( n s ) tONDLY tOFFDLY Fig. 18Fig. 17 Fig. 19 Fig. 20 Fig. 21 Fig. 22 Q uiescent S upp ly C urren t vs. Tem perature V cc = 18V , V in = 5V @ 1kH z, C L = 1000pF 0 0.05 0 .1 0.15 0 .2 0.25 0 .3 -60 -10 40 90 140 190 Tem perature (C ) Q u ie s c e n t V c c i n p u t C u rr e n t (m A )

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9 IXDN404 / IXDI404 / IXDF404 High State Ouput Resistance vs. Supply Voltage 0 1 2 3 4 5 6 5 10 15 20 25 30 35 Supply Voltage (V) H ig h S ta te O u tp u t R e s is ta n c e ( O h m s ) Low State Output Resistance vs. Supply Voltage 0 1 2 3 4 5 6 5 10 15 20 25 30 35 Supply Voltage (V) L o w S ta te O u tp u t R e s is ta n c e ( O h m s ) Vcc vs. P Channel Output Current -12 -10 -8 -6 -4 -2 0 5 10 15 20 25 30 35 Vcc (V) P C h a n n e l O u tp u t C u rr e n t (A ) Fig. 25 Fig. 26 Fig. 23 Fig. 24 N Channel Output Current vs. Temperature Vcc = 18V CL = 1000pF 0 1 2 3 4 5 6 -80 -30 20 70 120 170 Temperature (C) N C h a n n e l O u tp u t C u rr e n t (A ) P Channel Output Current vs. Temperature Vcc = 18V, CL = 1000pF 0 1 2 3 4 5 6 -80 -30 20 70 120 170 Temperature (C) P C h a n n e l O u tp u t C u rr e n t (A ) Fig. 27 Fig. 28 Vcc vs. N Channel Ouput Current 0 2 4 6 8 10 12 5 10 15 20 25 30 35 Vcc (V) N C h a n n e l O u tp u t C u rr e n t (A )