| Part Number | IXFX180N10 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 100V 180A PLUS247 |
| Datasheet | IXFX180N10 Datasheet |
| Package | TO-247-3 |
| In Stock | 2,330 piece(s) |
| Unit Price | $ 16.1173 * |
| Lead Time | Can Ship Immediately |
| Estimated Delivery Time | Jan 30 - Feb 4 (Choose Expedited Shipping) |
| Request for Quotation |
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Part Number # IXFX180N10 (Transistors - FETs, MOSFETs - Single) is manufactured by IXYS and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
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| Manufacturer | IXYS |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Datasheet | IXFX180N10Datasheet |
| Package | TO-247-3 |
| Series | HiPerFET? |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 390nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900pF @ 25V |
| Vgs (Max) | ��20V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 90A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247?-3 |
| Package / Case | TO-247-3 |
© 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 100 V V DGR T J = 25°C to 150°C, R GS = 1MΩ 100 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C ( Chip Capabitlty) 180 A I LRMS Leads Current Limit, RMS 160 A I DM T C = 25°C, Pulse Width Limited by T JM 720 A I A T C = 25°C 180 A E AS T C = 25°C 3 J dV/dt I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C 5 V/ns P D T C = 25°C 560 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Force (PLUS247) 20..120/4.5..27 N/lb. MountingTorque (TO-264) 1.13/10 Nm/lb.in. Weight PLUS247 6 g TO-264 10 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, I D = 3mA 100 V V GS(th) V DS = V GS , I D = 8mA 2.0 4.0 V I GSS V GS = ±20V, V DS = 0V ±100 nA I DSS V DS = V DSS 100 μA V GS = 0V T J = 125°C 2 mA R DS(on) V GS = 10V, I D = 0.5 • I D25 , Note 1 8 mΩ HiperFETTM Power MOSFETs Single MOSFET Die IXFK180N10 IXFX180N10 VDSS = 100V I D25 = 180A RDS(on) ≤ 8mΩ G = Gate D = Drain S = Source TAB = Drain (TAB) G D S TO-264 (IXFK) PLUS247 (IXFX) (TAB) DS98552D(02/09) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features International Standard Packages High Current Handling Capability Avalanche Rated Low R DS(on) HDMOSTM Process Fast intrinsic diode Low Package Inductance Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Temperature and Lighting Controls
IXFK180N10 IXFX180N10 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 10V, I D = 60A, Note 1 45 76 S C iss 10.90 nF C oss V GS = 0V, V DS = 25V, f = 1MHz 3.55 nF C rss 1.94 nF t d(on) 50 ns tr 90 ns t d(off) 140 ns tf 65 ns Q g(on) 390 nC Q gs V GS = 10V, V DS = 0.5 • V DSS , I D = 0.5 • I D25 55 nC Q gd 195 nC R thJC 0.22 °C/W R thCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 180 A I SM Repetitive, Pulse Width Limited by T JM 720 A V SD I F = 100A, V GS = 0V, Note 1 1.5 V t rr 250 ns Q RM 1.1 μC I RM 13 A IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Resistive Switching Times V GS = 10V, V DS = 0.5 • V DSS , I D = 0.5 • I D25 R G = 1Ω (External) I F = 90A, -di/dt = 100A/μs V R = 50V, V GS = 0V Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM (IXFX) Outline TO-264 (IXFK) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190
© 2009 IXYS CORPORATION, All Rights Reserved IXFK180N10 IXFX180N10 IXYS REF: F_180N10(9X)2-24-09-B Fig. 1. Output Characteristics @ 25ºC 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS - Volts I D - A m p e re s VGS = 10V 9V 8V 7V 5V 6V Fig. 2. Extended Output Characteristics @ 25ºC 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts I D - A m p e re s VGS = 10V 9V 5V 6V 7V 8V Fig. 3. Output Characteristics @ 125ºC 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS - Volts I D - A m p e re s VGS = 10V 9V 8V 5V 6V 7V Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade R D S (o n) - N o rm a liz e d VGS = 10V I D = 180A I D = 90A Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0 30 60 90 120 150 180 210 240 270 300 330 ID - Amperes R D S (o n) - N o rm a liz e d VGS = 10V 15V - - - - - TJ = 125ºC TJ = 25ºC Fig. 6. Maximum Drain Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade I D - A m p e re s External Lead Current Limit
IXFK180N10 IXFX180N10 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 25 50 75 100 125 150 175 200 225 250 275 300 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts I D - A m p e re s TJ = - 40ºC 25ºC 125ºC Fig. 8. Transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0 50 100 150 200 250 300 ID - Amperes g f s - S ie m e n s TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 50 100 150 200 250 300 350 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts I S - A m p e re s TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs V G S - V o lts VDS = 50V I D = 90A I G = 10mA Fig. 11. Capacitance 1 10 100 0 5 10 15 20 25 30 35 40 VDS - Volts C a p a ci ta n ce - N a n o F a ra d s f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Z (t h) JC - º C / W
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