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IXFX21N100F

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IXFX21N100F

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Part Number IXFX21N100F
Manufacturer IXYS
Description MOSFET N-CH 1KV 21A PLUS247-3
Datasheet IXFX21N100F Datasheet
Package TO-247-3
In Stock 17,244 piece(s)
Unit Price $ 24.6200 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 20 - Jan 25 (Choose Expedited Shipping)
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Part Number # IXFX21N100F (Transistors - FETs, MOSFETs - Single) is manufactured by IXYS and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IXFX21N100F specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IXFX21N100F with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IXFX21N100F.

IXFX21N100F Specifications

ManufacturerIXYS
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IXFX21N100FDatasheet
PackageTO-247-3
SeriesHiPerRF?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)500W (Tc)
Rds On (Max) @ Id, Vgs500 mOhm @ 10.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247?-3
Package / CaseTO-247-3

IXFX21N100F Datasheet

Page 1

Page 2

© 2010 IXYS CORPORATION, All Rights Reserved DS98880A(05/10) Features RF Capable MOSFETs Double Metal Process for Low Gate Resistive Avalanche Rated Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching DC Choppers 13.5 MHz Industrial Applications Pulse Generation Laser Drivers RF Amplifiers HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g , Low Intrinsic R g , High dV/dt, Low t rr IXFK21N100F IXFX21N100F V DSS = 1000V I D25 = 21A R DS(on) ≤ 500mΩ t rr ≤ 250ns Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 1000 V V DGR T J = 25°C to 150°C, R GS = 1MΩ 1000 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C 21 A I DM T C = 25°C, Pulse Width Limited by T JM 84 A I A T C = 25°C 21 A E AS T C = 25°C 2.5 J dv/dt I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C 10 V/ns P D T C = 25°C 500 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, I D = 1mA 1000 V V GS(th) V DS = V GS , I D = 4mA 3.0 5.5 V I GSS V GS = ± 20V, V DS = 0V ± 200 nA I DSS V DS = V DSS , V GS = 0V 100 μA T J = 125°C 2 mA R DS(on) V GS = 10V, I D = 0.5 • I D25 , Note 1 500 mΩ G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab

IXFX21N100F Reviews

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IXFX21N100F Guarantees

Service Guarantee

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We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

IXFX21N100F Packaging

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