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hot IXTH60N10


For Reference Only

Part Number IXTH60N10
Heisener # H299-IXTH60N10
Manufacturer IXYS
Description MOSFET N-CH 100V 60A TO-247
Datasheet IXTH60N10 Datasheet
Package TO-247-3
In Stock 65000
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Mar 21 - Mar 26 (Choose Expedited Shipping)

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IXTH60N10 Specifications

CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IXTH60N10 Datasheet
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 25V
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs20 mOhm @ 30A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

IXTH60N10 Datasheet

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