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MAX17000ETG+

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MAX17000ETG+

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Part Number MAX17000ETG+
Manufacturer Maxim Integrated
Description IC PWM CTLR DDR/DDR2/DDR3 24TQFN
Datasheet MAX17000ETG+ Datasheet
Package 24-WFQFN Exposed Pad
In Stock 1,042 piece(s)
Unit Price $ 13.7500 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
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Part Number # MAX17000ETG+ (PMIC - Power Management - Specialized) is manufactured by Maxim Integrated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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MAX17000ETG+ Specifications

ManufacturerMaxim Integrated
CategoryIntegrated Circuits (ICs) - PMIC - Power Management - Specialized
Datasheet MAX17000ETG+Datasheet
Package24-WFQFN Exposed Pad
SeriesQuick-PWM?
ApplicationsMemory, DDR2/DDR3 Regulator
Current - Supply2mA
Voltage - Supply4.5 V ~ 5.5 V
Operating Temperature-40°C ~ 85°C
Mounting TypeSurface Mount
Package / Case24-WFQFN Exposed Pad
Supplier Device Package24-TQFN (4x4)

MAX17000ETG+ Datasheet

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution EVALUATION KIT AVAILABLE 19-4125; Rev 2; 4/13 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com. General Description The MAX17000 pulse-width modulation (PWM) con- troller provides a complete power solution for notebook DDR, DDR2, and DDR3 memory. It comprises a step- down controller, a source/sink LDO regulator, and a ref- erence buffer to generate the required VDDQ, VTT, and VTTR rails. The VDDQ rail is supplied by a step-down converter using Maxim’s proprietary Quick-PWM™ controller. The high-efficiency, constant-on-time PWM controller han- dles wide input/output voltage ratios (low duty-cycle applications) with ease and provides 100ns response to load transients while maintaining a relatively constant switching frequency. The Quick-PWM architecture cir- cumvents the poor load-transient timing problems of fixed-frequency current-mode PWMs while also avoid- ing the problems caused by widely varying switching frequencies in conventional constant-on-time and con- stant-off-time PWM schemes. The controller senses the current to achieve an accurate valley current-limit pro- tection. It is also built in with overvoltage, undervoltage, and thermal protections. The MAX17000 can be set to run in three different modes: power-efficient SKIP mode, low-noise forced-PWM mode, and standby mode to support memory in notebook computer stand- by operation. The switching frequency is programma- ble from 200kHz to 600kHz to allow small components and high efficiency. The VDDQ output voltage can be set to a preset 1.8V or 1.5V, or be adjusted from 1.0V to 2.5V by an external resistor-divider. This output has 1% accuracy over line-and-load operating range. The MAX17000 includes a ±2A source/sink LDO regu- lator for the memory termination VTT rail. This VTT regu- lator has a ±5mV deadband that either sources or sinks, ideal for the fast-changing load burst present in memory termination applications. This feature also reduces output capacitance requirements. The VTTR reference buffer sources and sinks ±3mA, providing the reference voltage needed by the memory controller and devices on the memory bus. The MAX17000 is available in a 24-pin, 4mm x 4mm, TQFN package. Applications Notebook Computers DDR, DDR2, and DDR3 Memory Supplies SSTL Memory Supplies Features  SMPS Regulator (VDDQ) Quick-PWM with 100ns Load-Step Response Output Voltages—Preset 1.8V, 1.5V, or Adjustable 1.0V to 2.5V 1% VOUT Accuracy Over Line and Load 26V Maximum Input Voltage Rating Accurate Valley Current-Limit Protection 200kHz to 600kHz Switching Frequency  Source/Sink Linear Regulator (VTT) ±2A Peak Source/Sink Low-Output Capacitance Requirement Output Voltages-Preset VDDQ/2 or REFIN Adjustable from 0.5V to 1.5V  Low Quiescent Current Standby State  Soft-Start/Soft-Shutdown  SMPS Power-Good Window Comparator  VTT Power-Good Window Comparator  Selectable Overvoltage Protection  Undervoltage/Thermal Protections  ±3mA Reference Buffer (VTTR) 23 24 22 21 8 7 9 P G O O D 1 V TT S V TT R 10 O V P B S T D H TO N D L C S H 1 2 SKIP 4 5 6 1718 16 14 13 VCC SHDN REFIN VTTI VTT PGND2 MAX17000ETG+ P G O O D 2 LX 3 15 AGND 20 11 FBPGND1 19 12 CSLVDD TQFN 4mm x 4mm TOP VIEW S TD B Y Pin Configuration Quick-PWM is a trademark of Maxim Integrated Products, Inc. Ordering Information +Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad. PART TEMP RANGE PIN-PACKAGE MAX17000ETG+ -40°C to +85°C 24 TQFN-EP*

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 2 Maxim Integrated ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TON to PGND1.......................................................-0.3V to +28V VDD to PGND1..........................................................-0.3V to +6V VCC to VDD ............................................................-0.3V to +0.3V OVP to AGND...........................................................-0.3V to +6V SHDN, STDBY, SKIP to AGND.................................-0.3V to +6V REFIN, FB, PGOOD1, PGOOD2 to AGND ................................-0.3V to (VCC + 0.3V) CSH, CSL to AGND....................................-0.3V to (VCC + 0.3V) DL to PGND1..............................................-0.3V to (VDD + 0.3V) BST to PGND1...........................................................-1V to +34V BST to LX..................................................................-0.3V to +6V DH to LX....................................................-0.3V to (VBST + 0.3V) BST to VDD .............................................................-0.3V to +28V VTTI to PGND2 .........................................................-0.3V to +6V VTT to PGND2 ............................................-0.3V to (VTTI + 0.3V) VTTS to AGND............................................-0.3V to (VCC + 0.3V) VTTR to AGND ..........................................-0.3V to (VCSL + 0.3V) PGND1, PGND2 to AGND.....................................-0.3V to +0.3V Continuous Power Dissipation (TA = +70°C) 24-Pin, 4mm x 4mm TQFN-EP (derated 27.8mW/°C above +70°C) ..........................2222mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS PWM CONTROLLER VIN 3 26 Input Voltage Range VCC, VDD 4.5 5.5 V FB = AGND 1.485 1.500 1.515 FB = VCC 1.782 1.800 1.818 Output Voltage Accuracy VCSL VIN = 4.5V to 26V, SKIP = VCC FB = Adj 0.99 1.000 1.01 V Output Voltage Range VCSL 1 2.7 V Load Regulation Error VCSH - VCSL = 0 to 18mV, SKIP = VCC 0.1 % Line Regulation Error VDD = 4.5V to 5.5V, VIN = 4.5V to 26V 0.25 % Soft-Start Ramp Time tSSTART Rising edge of SHDN 1.4 2.1 ms Soft-Stop Ramp Time tSSTOP Falling edge of SHDN 2.8 ms Soft-Stop Threshold 25 mV RTON = 96.75k (600kHz), 167ns nominal -15 +15 RTON = 200k (300kHz), 333ns nominal -10 +10 On-Time Accuracy (Note 2) tON VIN = 12V, VCSL = 1.2V RTON = 303.25k (200kHz), 500ns nominal -15 +15 %

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 3Maxim Integrated PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Minimum Off-Time tOFF(MIN) (Note 2) 250 350 ns Quiescent Supply Current (VDD) IDD FB forced above 1.0V, STDBY = AGND or VCC, TA = +25°C 0.01 1.00 μA FB forced above 1.0V (SMPS, VTT, and VTTR blocks); STDBY = VCC 2 4 mA Quiescent Supply Current (VCC) ICC FB forced above 1.0V (ultra-skip and VTTR blocks); STDBY = AGND 275 475 μA Shutdown Supply Current (VDD + VCC) ICC + IDD SHDN = AGND, TA = +25°C 0.01 5 μA TON Pin Shutdown Current ITON SHDN = AGND, VIN = 26V, VDD = 0 or 5V, TA = +25°C 0.01 1.00 μA LINEAR REGULATOR (VTT) VTTI Input Voltage Range VTTI 1.0 2.8 V VTTI Supply Current IVTTI VVTTI = 2.5V, VREFIN = 1.4V 10 50 μA VTTI Shutdown Current SHDN = AGND, TA = +25°C 10 μA REFIN Input Bias Current VVTTI = 2.5V, VREFIN = 1.4V -50 +50 nA REFIN Range VREFIN 0.5 1.5 V REFIN Disable Threshold VCC - 0.3 V High-side on-resistance (source, IVTT = 0.1A) 0.12 0.25 VTT Internal MOSFET Low-side on-resistance (sink, IVTT = 0.1A) 0.18 0.36 VREFIN = 1V, IVTT = +50μA -5 +5 VTT Output-Accuracy Source Load (VREFIN - 5mV) or (VCSL/2 - 5mV) to VTTS, VTT = VTTS VREFIN = 0.5V to 1.5V, IVTT = +300mA -5 mV VREFIN = 1V, IVTT = -50μA -5 +5 VTT Output-Accuracy Sink Load (VREFIN + 5mV) or (VCSL/2 + 5mV) to VTTS, VTT = VTTS VREFIN = 0.5V to 1.5V, IVTT = -300mA +5 mV VTT Load Regulation -50μA to -1A IVTT +50μA to +1A 13 17 mV/A VTT Line Regulation 1.0V VTTI 2.8V, IVTT = ±100mA 1 mV Source 2 4 VTT Current Limit Sink -4 -2 A VTT Current-Limit Soft-Start Time With respect to internal VTT_EN signal 160 μs VTT Discharge MOSFET OVP = VCC 16 VTTS Input Current TA = +25°C 0.1 1.0 μA ELECTRICAL CHARACTERISTICS (continued) (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 4 Maxim Integrated ELECTRICAL CHARACTERISTICS (continued) (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS REFERENCE BUFFER (VTTR) IVTT = ±1mA -10 +10 VTTR Output Accuracy (Adj) REFIN to VTTR IVTT = ±3mA -20 +20 IVTT = ±1mA -10 +10 VTTR Output Accuracy (Preset) VCSL/2 to VTTR IVTT = ±3mA -20 +20 mV VTTR Maximum Recommended Current Source/sink 5 mA FAULT DETECTION (SMPS) SMPS OVP and PGOOD1 Upper Trip Threshold 12 15 18 % SMPS OVP and PGOOD1 Upper Trip Threshold Fault-Propagation Delay tOVP FB forced 25mV above trip threshold 10 μs SMPS Output Undervoltage Fault-Propagation Delay tUVP 200 μs SMPS PGOOD1 Lower Trip Threshold Measured at FB, hysteresis = 25mV -12 -15 -18 % PGOOD1 Lower Trip Threshold Propagation Delay tPGOOD1 FB forced 50mV below PGOOD1 trip threshold 10 μs PGOOD1 Output Low Voltage ISINK = 3mA 0.4 V PGOOD1 Leakage Current IPGOOD1 FB = 1V (PGOOD1 high impedance), PGOOD1 forced to 5V, TA = +25°C 1 μA TON POR Threshold VPOR(IN) Rising edge, PWM disabled below this level; hysteresis = 200mV 3.0 V FAULT DETECTION (VTT) PGOOD2 Upper Trip Threshold Hysteresis = 25mV 8 10 13 % PGOOD2 Lower Trip Threshold Hysteresis = 25mV -13 -10 -8 % PGOOD2 Propagation Delay tPGOOD2 VTTS forced 50mV beyond PGOOD2 trip threshold 10 μs PGOOD2 Fault Latch Delay VTTS forced 50mV beyond PGOOD2 trip threshold 5 ms PGOOD2 Output Low Voltage ISINK = 3mA 0.4 V PGOOD2 Leakage Current IPGOOD2 VTTS = VREFIN (PGOOD2 high impedance), PGOOD2 forced to 5V, TA = +25°C 1 μA FAULT DETECTION Thermal-Shutdown Threshold TSHDN Hysteresis = 15°C 160 °C VCC Undervoltage Lockout Threshold VUVLO(VCC) Rising edge, IC disabled below this level hysteresis = 200mV 3.8 4.1 4.4 V CSL Discharge MOSFET OVP = VCC 16

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 5Maxim Integrated ELECTRICAL CHARACTERISTICS (continued) (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS CURRENT LIMIT Valley Current-Limit Threshold VLIMIT VCSH - VCSL 17 20 25 mV Current-Limit Threshold (Negative) VNEG VCSH - VCSL, SKIP = VCC -23 mV Current-Limit Threshold (Zero Crossing) VZX VPGND1 - VLX 1 mV SMPS GATE DRIVERS DH Gate Driver On-Resistance RDH BST - LX forced to 5V 1.5 5.0 DL high 1.5 5.0 DL Gate Driver On-Resistance RDL DL low 0.6 3.0 DH Gate Driver Source/ Sink Current IDH DH forced to 2.5V, BST - LX forced to 5V 1 A IDL(SRC) DL forced to 2.5V 1 DL Gate Driver Source/ Sink Current IDL(SNK) DL forced to 2.5V 3 A DL rising, TA = +25°C 10 25 Dead Time tDEAD DL falling, TA = +25°C 15 35 ns Internal BST Switch On-Resistance RBST IBST = 10mA, VDD = 5V internal design target 4.5 LX, BST Leakage Current VBST = VLX = 26V, SHDN = AGND, TA = +25°C 0.001 20 μA INPUTS AND OUTPUTS Logic Input Threshold SHDN, STDBY, SKIP, OVP, rising edge hysteresis = 300mV/600mV (min/max) 1.30 1.65 2.00 V Logic Input Current SKIP = AGND or VCC, -1 +1 μA Input Leakage Current VCSH = 0V or VCC, TA = +25°C -1 +1 μA Input Bias Current VCSL = 0V or VCC 55 100 μA

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 6 Maxim Integrated ELECTRICAL CHARACTERISTICS (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = -40°C to +85°C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN MAX UNITS PWM CONTROLLER VIN 3 26 Input Voltage Range VCC, VDD 4.5 5.5 V FB = AGND 1.485 1.520 FB = VCC 1.782 1.820 Output Voltage Accuracy VCSL VIN = 4.5V to 26V, SKIP = VCC FB = Adj 0.990 1.020 V RTON = 96.75k (600kHz), 167ns nominal -15 +15 RTON = 200k (300kHz), 333ns nominal -10 +10 On-Time Accuracy (Note 2) tON VIN = 12V, VCSL = 1.2V RTON = 303.25k (200kHz), 500ns nominal -15 +15 % Minimum Off-Time tOFF(MIN) (Note 2) 350 ns FB forced above 1.0V (PWM, VTT, and VTTR blocks); STDBY = VCC 4 mA Quiescent Supply Current (VCC) ICC FB forced above 1.0V (ultra-skip and VTTR blocks); STDBY = AGND 475 μA LINEAR REGULATOR (VTT) VTTI Input Voltage Range VVTTI 1.0 2.8 V VTTI Supply Current IVTTI VVTTI = 2.5V, VREFIN = 1.4V 50 μA REFIN Range VREFIN 0.5 1.5 V REFIN Disable Threshold VCC - 0.3 V High-side on-resistance (source, IVTT = 0.1A) 0.25 VTT Internal MOSFET Low-side on-resistance (sink, IVTT = 0.1A) 0.36 VTT Load Regulation -50μA to -1A IVTT +50μA to +1A 17 mV/A

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 7Maxim Integrated ELECTRICAL CHARACTERISTICS (continued) (VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = -40°C to +85°C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN MAX UNITS REFERENCE BUFFER (VTTR) IVTT = ±1mA -10 +10 VTTR Output Accuracy (Adj) REFIN to VTTR IVTT = ±3mA -20 +20 mV IVTT = ±1mA -10 +10 VTTR Output Accuracy (Preset) VCSL/2 to VTTR IVTT = ±3mA -20 +20 mV FAULT DETECTION (SMPS) PGOOD1 Output Low Voltage ISINK = 3mA 0.4 V FAULT DETECTION (VTT) PGOOD2 Output Low Voltage ISINK = 3mA 0.4 V FAULT DETECTION VCC Undervoltage-Lockout Threshold VUVLO(VCC) Rising edge, IC disabled below this level; hysteresis = 200mV 4.0 4.4 V CURRENT LIMIT Valley Current-Limit Threshold VLIMIT VCSH - VCSL 15 25 mV SMPS GATE DRIVERS DH Gate Driver On-Resistance RDH BST - LX forced to 5V 5 DL high 5 DL Gate Driver On-Resistance RDL DL low 3 DL rising 10 Dead Time tDEAD DL falling 15 ns INPUTS AND OUTPUTS Logic Input Threshold SHDN, STDBY, SKIP, OVP, rising edge hysteresis = 300mV/600mV (min/max) 1.3 2 V Note 1: Limits are 100% production tested at TA = +25°C. Maximum and minimum limits over temperature are guaranteed by design and characterization. Note 2: On-time and off-time specifications are measured from 50% point at the DH pin with LX = GND, VBST = 5V, and a 250pF capacitor connected from DH to LX. Actual in-circuit times might differ due to MOSFET switching speeds.

Page 9

MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 8 Maxim Integrated Typical Operating Characteristics (MAX17000 Circuit of Figure 1, VIN = 12V, VDD = VCC = 5V, SKIP = GND, TA = +25°C, unless otherwise noted.) SMPS 1.8V EFFICIENCY vs. LOAD CURRENT M A X 1 7 0 0 0 t o c0 1 LOAD CURRENT (A) EF FI C IE N C Y ( % ) 10.1 20 30 40 50 60 70 80 90 100 10 0.01 10 STANDBY MODE PWM MODE VIN = 7V SKIP MODE SMPS 1.8V EFFICIENCY vs. LOAD CURRENT M A X 1 7 0 0 0 t o c0 2 LOAD CURRENT (A) EF FI C IE N C Y ( % ) 10.1 20 30 40 50 60 70 80 90 100 10 0.01 10 STANDBY MODE PWM MODE VIN = 12V SKIP MODE SMPS 1.8V EFFICIENCY vs. LOAD CURRENT M A X 1 7 0 0 0 t o c0 3 LOAD CURRENT (A) EF FI C IE N C Y ( % ) 10.1 20 30 40 50 60 70 80 90 100 10 0.01 10 STANDBY MODE PWM MODE VIN = 20V SKIP MODE SMPS 1.8V OUTPUT VOLTAGE vs. LOAD CURRENT M A X 1 7 0 0 0 t o c0 4 LOAD CURRENT (A) O U TP U T V O LT A G E (V ) 0.1 10.01 1.79 1.80 1.81 1.82 1.78 0.001 10 PWM MODE VIN = 12V SKIP MODE SMPS SWITCHING FREQUENCY vs. LOAD CURRENT M A X 1 7 0 0 0 t o c0 5 LOAD CURRENT (A) S W IT C H IN G F R EQ U EN C Y ( kH z) 4 6 82 100 50 200 150 300 250 350 0 0 10 VIN = 12V VOUT = 1.8V SMPS VALLEY-CURRENT LIMIT vs. INPUT VOLTAGE M A X 1 7 0 0 0 t o c0 6 INPUT VOLTAGE (V) C U R R EN T LI M IT ( A ) 12 16 20 248 9.75 10.00 10.25 10.50 9.50 4 28 RSENSE = 2mΩ NO-LOAD SUPPLY CURRENT vs. INPUT VOLTAGE M A X 1 7 0 0 0 t o c0 7 INPUT VOLTAGE (V) S U P P LY C U R R EN T (m A ) 12 16 20 248 0.1 1 10 100 0.01 4 28 PWM MODE, ICC + IDD SKIP MODE, ICC + IDD SKIP MODE, IIN STANDBY MODE, ICC + IDD STANDBY MODE, IIN PWM MODE, IIN NO LOAD PRESET 1.5V OUTPUT VOLTAGE DISTRIBUTION M A X 1 7 0 0 0 t o c0 8 OUTPUT VOLTAGE (V) S A M P LE P ER C EN TA G E (% ) 1.500 1.5051.495 10 20 30 40 50 0 1.490 1.510 SAMPLE SIZE = 150 +85°C +25°C

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MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution 9Maxim Integrated STARTUP WAVEFORM (HEAVY LOAD) MAX17000 toc09 200μs/div PGOOD1 SHDN : 5V/div VDDQ : 500mV/div VTT : 500mV/div VTTR : 500mV/div PGOOD1 : 2V/div ILX : 5A/div DL : 5V/div RLOAD = 0.25Ω SKIP = GND VTTR VTT VDDQ DL ILX SHDN SHUTDOWN WAVEFORM (DISCHARGE MODE ENABLED) MAX17000 toc10 400μs/div DL PGOOD2 : 5V/div PGOOD1 : 5V/div SHDN : 10V/div ILX : 2A/div DL : 5V/div VDDQ : 2V/div VTT : 1V/div VTTR : 1V/div VTTR VTT VDDQ PGOOD1 PGOOD2 ILX SHDN STANDBY TRANSITION WAVEFORM MAX17000 toc11 2ms/div DL TON DL : 5V/div LX : 10V/div ILX : 2A/div STBY : 5V/div VDDQ : 1V/div VTT : 1V/div TON: 10V/div VTT VDDQ ILX LX STBY STANDBY TRANSITION WAVEFORM MAX17000 toc12 200μs/div DL TON LX : 10V/div ILX : 10A/div DL : 5V/div STBY : 5V/div VDDQ : 2V/div VTT : 1V/div TON: 10V/div VTT VDDQ ILX LX STBY SMPS LOAD-TRANSIENT RESPONSE (SKIP MODE) MAX17000 toc13 20μs/div ILOAD : 5A/div ILX : 5A/div VDDQ : 50mV/div LX : 10V/div VDDQ ILX ILOAD LX SMPS LOAD-TRANSIENT RESPONSE (SKIP MODE) MAX17000 toc14 20μs/div ILOAD : 5A/div ILX : 5A/div VDDQ : 50mV/div LX : 10V/div VDDQ ILX ILOAD LX Typical Operating Characteristics (continued) (MAX17000 Circuit of Figure 1, VIN = 12V, VDD = VCC = 5V, SKIP = GND, TA = +25°C, unless otherwise noted.)

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May 14, 2020

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May 14, 2020

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April 3, 2020

These function just as well. You do need to spend some time modifying the harness, but no big deal.

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