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MC13820FCR2

hot MC13820FCR2

MC13820FCR2

For Reference Only

Part Number MC13820FCR2
Manufacturer NXP
Description IC W/NOISE AMPLIFIER BASE 12-QFN
Datasheet MC13820FCR2 Datasheet
Package 12-VFQFN Exposed Pad
In Stock 3998 piece(s)
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MC13820FCR2

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MC13820FCR2 Specifications

ManufacturerNXP
CategoryRF/IF and RFID - RF Amplifiers
Datasheet MC13820FCR2 Datasheet
Package12-VFQFN Exposed Pad
Series-
Frequency800MHz ~ 2.5GHz
P1dB-10dBm (0.1mW)
Gain18dB
Noise Figure1.25dB
RF TypeCellular, ISM, PCS, GPS
Voltage - Supply2.7 V ~ 3 V
Current - Supply2.8mA
Test Frequency1.575GHz
Package / Case12-VFQFN Exposed Pad
Supplier Device Package12-QFN (3x3)

MC13820FCR2 Datasheet

Page 1

Page 2

© Freescale Semiconductor, Inc., 2005. All rights reserved. Freescale Semiconductor Technical Data Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Document Number: MC13820/D Rev. 1.1, 09/2005 MC13820 Package Information Plastic Package Case 1345 (QFN–12) Ordering Information Device Device Marking or Operating Temperature Range Package MC13820 820 QFN-12 1 Introduction The MC13820 is a high gain LNA with extremely low noise figure, designed for cellular, GPS and ISM band applications. An integrated bypass switch is included to preserve input intercept performance. The input and output match are external to allow maximum design flexibility. The MC13820 is fabricated using Freescale's advanced RF BiCMOS process using the SiGe:C option and is packaged in the QFN12 leadless package. 1.1 Features • RF Input Frequency: 1000 MHz to 2.4 GHz • Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ) at 2140 MHz • Output 3rd Order Intercept Point (OIP3): 18.5 dBm (typ) at 1575 MHz and 19.7 dBm (typ) at 2140 MHz • Noise Figure (NF): 1.25 dB (typ) at 1575 MHz and 1.3 dB (typ) at 2140 MHz • 1dB Compression Point (P1dB): -10 dBm (typ) at 1575 MHz and -5 dBm (typ) at 2140 MHz MC13820 Low Noise Amplifier with Bypass Switch Contents: 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Electrical Specifications . . . . . . . . . . . . . . . . 3 3 Application Information . . . . . . . . . . . . . . . . 10 4 Printed Circuit Board . . . . . . . . . . . . . . . . . . 23 5 Scattering Parameters . . . . . . . . . . . . . . . . . 26 6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 7 Product Documentation . . . . . . . . . . . . . . . . 36

Page 3

Introduction MC13820 Technical Data, Rev. 1.1 2 Freescale Semiconductor • Freescale’s IP3 Boost Circuitry • Bypass Mode Included for Improved Intercept Point Performance • Total Supply Current: 2.8 mA @ 2.7 Vdc 10 µA (typ) in Bypass Mode • Bias Stabilized for Device and Temperature Variations • QFN-12 Leadless Package with Low Parasitics • SiGe Technology Ensures Lowest Possible Noise Figure Figure 1. Simplified Block Diagram 2 1 3 4 5 6 12 11 10 8 9 7 Gnd LNA Out LNA In Gain Enable VCC1 MC13820 Rbias Emit Gnd Logic NC NC NC NC

Page 4

Electrical Specifications MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 3 2 Electrical Specifications Table 1. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 3.3 V Storage Temperature Range Tstg -65 to 150 °C Operating Ambient Temperature Range TA -30 to 85 °C RF Input Power Prf 10 dBm Power Dissipation Pdis 100 mW Thermal Resistance, Junction to Case RθJC 24 C/W Thermal Resistance, Junction to Ambient, 4 layer board RθJA 90 C/W NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤200 V, Charge Device Model (CDM) ≤450 V, and Machine Model (MM) ≤50 V. Additional ESD data available upon request. Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit RF Frequency range fRF 1000 2400 MHz Supply Voltage VCC 2.7 2.75 3 V Logic Voltage Input High Voltage Input Low Voltage 1.25 0 - - VCC 0.8 V Table 3. Electrical Characteristics (VCC = 2.75 V, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Insertion Gain R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz |S21|2 16 14.5 14.3 13 17.1 15.6 15.3 14.2 - - - - dB Maximum Stable Gain and/or Maximum Available Gain1 R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz MSG, MAG 21.5 19.5 20.5 19.5 22.5 20.5 21.5 19.6 - - - - dB Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz NFmin - - - - 1.01 0.96 1.01 0.96 1.1 1.05 1.1 1.05 dB

Page 5

Electrical Specifications MC13820 Technical Data, Rev. 1.1 4 Freescale Semiconductor Associated Gain at Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz Gnf 21.7 19 21.7 19 22.7 19.8 22.7 19.8 - - - - dB 1 Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: , if K > 1, , if K < 1 Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit 1575 MHz (Refer to Figure 9) Frequency f - 1575 - MHz Active Gain G 17.5 18 - dB Active Noise Figure NF - 1.25 1.4 dB Active Input Third Order Intercept Point IIP3 -1.0 0.5 - dBm Active Input 1dB Compression Point P1dB -11 -10 - dBm Active Current @ 2.75 V ICC - 2.8 3.3 mA Bypass Gain G -6.0 -5.0 - dB Bypass Noise Figure NF - 4.8 5.2 dB Bypass Input Third Order Intercept Point IIP3 26 27 - dBm Bypass Current - 10 20 µA 1960 MHz (Refer to Figure 10) Frequency f - 1960 - MHz Active Gain G 16 16.4 - dB Active Noise Figure NF - 1.25 1.4 dB Active Input Third Order Intercept Point IIP3 0 1 - dBm Active Input 1dB Compression Point P1dB -7.0 -6 - dBm Active Current @ 2.75 V ICC - 2.8 3.3 mA Bypass Gain G -5.0 -4 - dB Bypass Noise Figure NF - 4.7 5.1 dB Bypass Input Third Order Intercept Point IIP3 23 25 - dBm Bypass Current - 10 20 µA Table 3. Electrical Characteristics (continued) (VCC = 2.75 V, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit MAG S 21 S 12 ---------- K K 2 1–±⎝ ⎠ ⎛ ⎞= MSG S 21 S 12 ----------=

Page 6

Electrical Specifications MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 5 2140 MHz (Refer to Figure 11) Frequency f - 2140 - MHz Active Gain G 15.3 15.7 - dB Active Noise Figure NF - 1.3 1.4 dB Active Input Third Order Intercept Point IIP3 2.5 3.5 - dBm Active Input 1dB Compression Point P1dB -6.0 -5 - dBm Active Current @ 2.75 V ICC - 2.8 3.2 mA Bypass Gain G -4.2 -3.2 - dB Bypass Noise Figure NF - 3.2 3.6 dB Bypass Input Third Order Intercept Point IIP3 22.5 24.5 - dBm Bypass Current - 10 20 µA 2400 MHz (Refer to Figure 12) Frequency f - 2400 - MHz Active Gain G 13.8 14 - dB Active Noise Figure NF - 1.49 1.6 dB Active Input Third Order Intercept Point IIP3 3.5 4.0 - dBm Active Input 1dB Compression Point P1dB -5.0 -4.0 - dBm Active Current @ 2.75 V ICC - 2.8 3.2 mA Bypass Gain G -5.0 -4.0 - dB Bypass Noise Figure NF - 4.2 4.7 dB Bypass Input Third Order Intercept Point IIP3 22 24 - dBm Bypass Current - 10 20 µA Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued) (VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit

Page 7

Electrical Specifications MC13820 Technical Data, Rev. 1.1 6 Freescale Semiconductor Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 2 kΩ) Table 5. Truth Table Pin Function Pin Name Enable Disable Low Gain High Gain Low Gain High Gain Circuit Bias VCC1 VCC1 1 1 1 1 Toggles Gain Mode (Active or Bypass) GAIN 0 1 0 1 Toggles LNA On/Off ENABLE 1 1 0 0 LNA Bias VCC3 LNA Out 1 1 1 1 NOTES: 1. Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential. 2. VCC3 is inductively coupled to LNA OUT pin 3. Minimum logic state “1” for enable and gain pins is 1.25 V. 4. Maximum logic state “0” for enable and gain pins is 0.8 V. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency Rbias is 2 kohm 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 5.5 f, Frequency (GHz) M S G , M ax im u m S ta b le G ai n ; M A G , M ax im u m A va il ab le G ai n ; |S 21 |2 , F o rw ar d I n se rt io n G ai n , (d B ) MSG MAG|S21|2

Page 8

Electrical Specifications MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 7 Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.2 kΩ) Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency Rbias is 1.2 kohm 0 5 10 15 20 25 30 35 0.5 1.5 2.5 3.5 4.5 f, Frequency (GHz) M S G , M ax im u m S ta b le G ai n ; M A G , M ax im u m A va il ab le G ai n ; |S 21 |2 , F o rw ar d I n se rt io n G ai n ( d B ) M MSG MAG |S21|2 Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc 14 15 16 17 18 19 20 21 22 23 24 2.5 3 3.5 4 4.5 5 5.5 Icc (mA) M S G , M ax im u m S ta b le G ai n ; M A G , M ax im u m A va il ab le G ai n ; |S 21 |2 , F o rw ar d I n se rt io n G ai n ( d B ) MSG/MAG 1.575 GHz MSG/MAG 1.96 GHz MSG/MAG 2.14 GHz S|21|2 1.575 GHz S|21|2 1.96 GHz S|21|2 2.14 GHz

Page 9

Electrical Specifications MC13820 Technical Data, Rev. 1.1 8 Freescale Semiconductor Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 2 kΩ) Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.2 kΩ) Minimum Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1000 1200 1400 1600 1800 2000 2200 2400 f, Frequency (MHz) N F m in , M in im u m N o is e F ig u re (d B ) 0 5 10 15 20 25 30 G n f, A ss o ci at ed G ai n ( d B )Gnf NFmin Minimum Noise Figure and Associated Gain vs. Frequency Rbias = 1.2 kohm 0.98 1 1.02 1.04 1.06 1.08 1.1 1.12 1000 1200 1400 1600 1800 2000 2200 2400 f, Frequency (MHz) N F m in , M in im u m N o is e F ig u re ( d B ) 0 5 10 15 20 25 30 G n f, A ss o ci at ed G ai n ( d B ) Gnf NFmin

Page 10

Electrical Specifications MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 9 Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit (Rbias varied from 1.2 kΩ to 3 kΩ) Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit (Rbias varied from 1.2 kΩ to 3 kΩ) Input 3rd Order Intercept Point vs. Icc 1960 MHz Application Ckt. -6 -4 -2 0 2 4 6 1.5 2.5 3.5 4.5 5.5 Icc (mA) In p u t 3r d O rd er In te rc ep t P o in t (d B m ) Input 3rd Order Intercept Point vs. Icc 2140 MHz Application Circuit -2 -1 0 1 2 3 4 5 6 1 2 3 4 5 Icc (mA) In p u t 3r d O rd er In te rc ep t P o in t, II P 3 (d B m )

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