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MCT5211M

hot MCT5211M

MCT5211M

For Reference Only

Part Number MCT5211M
Manufacturer Fairchild/ON Semiconductor
Description OPTOISO 4.17KV TRANS W/BASE 6DIP
Datasheet MCT5211M Datasheet
Package 6-DIP (0.300", 7.62mm)
In Stock 6000 piece(s)
Unit Price $ 1.23 *
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MCT5211M Specifications

ManufacturerFairchild/ON Semiconductor
CategoryIsolators - Optoisolators - Transistor, Photovoltaic Output
Datasheet MCT5211M Datasheet
Package6-DIP (0.300", 7.62mm)
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)150% @ 1.6mA
Turn On / Turn Off Time (Typ)14µs, 2.5µs
Input TypeDC
Output TypeTransistor with Base
Voltage - Output (Max)30V
Current - Output / Channel150mA
Voltage - Forward (Vf) (Typ)1.25V
Current - DC Forward (If) (Max)50mA
Vce Saturation (Max)400mV
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

MCT5211M Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs ©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 April 2015 MCT5210M, MCT5211M 6-Pin DIP Low Input Current Phototransistor Optocouplers Features ■ High CTR CE(SAT) Comparable to Darlingtons ■ High Common Mode Transient Rejection: 5 kV/µs ■ Data Rates Up to 150 kbits/s (NRZ) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ CMOS to CMOS/LSTTL Logic Isolation ■ LSTTL to CMOS/LSTTL Logic Isolation ■ RS-232 Line Receiver ■ Telephone Ring Detector ■ AC Line Voltage Sensing ■ Switching Power Supply Description The MCT5210M and MCT5211M devices consist of a high-efficiency AlGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual-in-line package. The devices are well suited for CMOS to LSTT/TTL inter- faces, offering 250% CTR CE(SAT) with 1 mA of LED input current. With an LED input current of 1.6 mA, data rates to 20K bits/s are possible. Both can easily interface LSTTL to LSTTL/TTL, and with use of an external base-to-emitter resistor data rates of 100K bits/s can be achieved. Schematic Package Outlines Figure 2. Package Outlines Figure 1. Schematic 1 2 6 5 COLLECTOR 4 EMITTER BASEANODE CATHODE 3

Page 4

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 2 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 V RMS I–IV < 300 V RMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x 1.6 = V PR , Type and Sample Test with t m = 10 s, Partial Discharge < 5 pC 1360 V peak Input-to-Output Test Voltage, Method B, V IORM x 1.875 = V PR , 100% Production Test with t m = 1 s, Partial Discharge < 5 pC 1594 V peak V IORM Maximum Working Insulation Voltage 850 V peak V IOTM Highest Allowable Over-Voltage 6000 V peak External Creepage ≥ 7 mm External Clearance ≥ 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm T S Case Temperature (1) 175 °C I S,INPUT Input Current (1) 350 mA P S,OUTPUT Output Power (1) 800 mW R IO Insulation Resistance at T S , V IO = 500 V (1) > 10 9 Ω

Page 5

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 3 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Unit TOTAL DEVICE T STG Storage Temperature -40 to +125 °C T OPR Operating Temperature -40 to +100 °C T J Junction Temperature -40 to +125 ºC T SOL Lead Solder Temperature 260 for 10 seconds °C P D Total Device Power Dissipation @ 25°C (LED plus detector) 225 mW Derate Linearly From 25°C 3.5 mW/°C EMITTER I F Continuous Forward Current 50 mA V R Reverse Input Voltage 6 V I F (pk) Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A P D LED Power Dissipation @ 25°C 75 mW Derate Linearly From 25°C 1.0 mW/°C DETECTOR I C Continuous Collector Current 150 mA P D Detector Power Dissipation @ 25°C 150 mW Derate Linearly From 25°C 2.0 mW/°C

Page 6

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 4 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Electrical Characteristics T A = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameters Test Conditions Min. Typ. Max. Unit EMITTER V F Input Forward Voltage I F = 5 mA 1.25 1.50 V Δ V F Δ T A Forward Voltage Temperature Coefficient I F = 2 mA -1.75 mV/°C V R Reverse Voltage I R = 10 µA 6 V C J Junction Capacitance V F = 0 V, f = 1.0 MHz 18 pF DETECTOR BV CEO Breakdown Voltage, Collector-to-Emitter I C = 1.0 mA, I F = 0 30 100 V BV CBO Breakdown Voltage, Collector-to-Base I C = 10 µA, I F = 0 30 120 V BV EBO Breakdown Voltage, Emitter-to-Base I E = 10 µA, I F = 0 5 10 V I CER Dark Current, Collector-to-Emitter V CE = 10 V, I F = 0, R BE = 1 M Ω 1 100 nA C CE Capacitance, Collector-to-Emitter V CE = 0, f = 1 MHz 10 pF C CB Capacitance, Collector-to-Base V CB = 0, f = 1 MHz 80 pF C EB Capacitance, Emitter-to-Base V EB = 0, f = 1 MHz 15 pF

Page 7

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 5 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Electrical Characteristics (Continued) T A = 25°C unless otherwise specified. Transfer Characteristics Notes: 2. DC Current Transfer Ratio (CTR CE ) is defined as the transistor collector current (I CE ) divided by the input LED current (I F ) x 100%, at a specified voltage between the collector and emitter (V CE ). 3. The collector base Current Transfer Ratio (CTR CB ) is defined as the transistor collector base photocurrent (I CB ) divided by the input LED current (I F ) time 100%. 4. Referring to Figure 16 the T PHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3 V point on the falling edge of the output pulse. 5. Referring to Figure 16 the T PLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3 V point on the rising edge of the output pulse. Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit DC CHARACTERISTICS CTR CE(SAT) Saturated Current Transfer Ratio Collector-to-Emitter (2) I F = 3.0 mA, V CE = 0.4 V MCT5210M 60 % I F = 1.6 mA, V CE = 0.4 V MCT5211M 100 % I F = 1.0 mA, V CE = 0.4 V 75 % CTR (CE) Current Transfer Ratio Collector-to-Emitter (2) I F = 3.0 mA, V CE = 5.0 V MCT5210M 70 % IF = 1.6 mA, VCE = 5.0 V MCT5211M 150 % IF = 1.0 mA, VCE = 5.0 V 110 % CTR(CB) Current Transfer Ratio Collector-to-Base(3) IF = 3.0 mA, VCE = 4.3 V MCT5210M 0.2 % IF = 1.6 mA, VCE = 4.3 V MCT5211M 0.3 % IF = 1.0 mA, VCE = 4.3 V 0.25 % VCE(SAT) Saturation Voltage IF = 3.0 mA, ICE = 1.8 mA MCT5210M 0.4 V IF = 1.6 mA, ICE = 1.6 mA MCT5211M 0.4 V AC CHARACTERISTICS TPHL Propagation Delay HIGH-to-LOW(4) RL = 330 Ω, RBE = ∞ IF = 3.0 mA, VCC = 5.0 V MCT5210M 10 µs RL = 3.3 kΩ, RBE = 39 kΩ 7 µs RL = 750 Ω, RBE = ∞ IF = 1.6 mA, VCC = 5.0 V MCT5211M 14 µs RL = 4.7 kΩ, RBE = 91 kΩ 15 µs RL = 1.5 kΩ, RBE = ∞ IF = 1.0 mA, VCC = 5.0 V 17 µs RL = 10 kΩ, RBE = 160 kΩ 24 µs TPLH Propagation Delay LOW-to-HIGH(5) RL = 330 Ω, RBE = ∞ IF = 3.0 mA, VCC = 5.0 V MCT5210M 0.4 µs RL = 3.3 kΩ, RBE = 39 kΩ 8 µs RL = 750 Ω, RBE = ∞ IF = 1.6 mA, VCC = 5.0 V MCT5211M 2.5 µs RL = 4.7 kΩ, RBE = 91 kΩ 11 µs RL = 1.5 kΩ, RBE = ∞ IF = 1.0 mA, VCC = 5.0 V 7 µs RL = 10 kΩ, RBE = 160 kΩ 16 µs

Page 8

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 6 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Isolation Characteristics Notes: 6. Device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 5, 6 and 7 are shorted together. 7. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output (pin 4, 5, 6 connected). Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage(6) t = 1 Minute 4170 VACRMS RISO Isolation Resistance (6) VI-O = ±500 VDC, TA = 25°C 10 11 Ω CISO Isolation Capacitance (7) VI-O = 0 V, f = 1 MHz 0.4 0.6 pF CMH Common Mode Transient Rejection – Output HIGH VCM = 50 VP-P, RL= 750 Ω, IF = 0 5000 V/µs CML Common Mode Transient Rejection – Output LOW VCM = 50 VP-P, RL = 750 Ω, IF =1.6 mA 5000 V/µs

Page 9

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 7 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Typical Performance Curves Figure 3. LED Forward Voltage vs. Forward Current Figure 4. Normalized Current Transfer Ratio vs. Forward Current Figure 5. Normalized CTR vs. Temperature Figure 6. Normalized Collector vs. Collector-Emitter Voltage Figure 7. Normalized Collector Base Photocurrent Ratio vs. Forward Current Figure 8. Normalized Collector-Base Current vs. Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.1 1 10 V F – F O R W A R D V O L T A G E ( V ) 10 1 0.1 0.01 0.001 0.0001 100 10 1 0.1 0.01 10 1 0.1 0.01 0.001 N O R M A L IZ E D C U R R E N T T R A N S F E R R A T IO N O R M A L IZ E D I C B – C O L L E C T O R -B A S E P H O T O C U R R E N T N O R M A L IZ E D C O L L E C T O R -B A S E C U R R E N T N O R M A L IZ E D I C E – C O L L E C T O R -E M IT T E R C U R R E N T N O R M A L IZ E D C U R R E N T T R A N S F E R R A T IO IF – LED FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)IF – FORWARD CURRENT (mA) VCE – COLLECTOR-EMITTER VOLTAGE (V) IF – FORWARD CURRENT (mA) 100 0.1 -20 0 20 40 60 -60 -40 -20 0 20 40 60 80 100 0.1 1 10 0.1 1 10010 1 10 TA = -40°C TA = 25°C TA = 100°C IF = 2 mA IF = 1 mA IF = 0.5 mA IF = 0.2 mA Normalized to: IF = 5 mA VCE = 5 V TA = 25°C IF = 0.2 mA IF = 0. 5mA IF = 1 mA IF = 2 mA IF = 10 mA Normalized to: IF = 5 mA VCB = 4.3 V TA = 25°C Normalized to: IF = 5 mA VCB = 4.3 V TA = 25°C IF = 0.2 mA IF = 0.5 mA IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Normalized to: IF = 5 mA VCE = 5 V TA = 25°C -40 -20 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Normalized to: IF = 5 mA VCE = 5 V TA = 25°C IF = 10 mA IF = 5 mA IF = 5 mA

Page 10

©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT5210M, MCT5211M Rev. 1.3 8 M C T 5 2 1 0 M , M C T 5 2 1 1 M — 6 -P in D IP L o w In p u t C u rre n t P h o to tra n s is to r O p to c o u p le rs Typical Performance Curves (Continued) Figure 9. Collector-Emitter Dark Current vs. Ambient Temperature Figure 10. Switching Time vs. Ambient Temperature Figure 11. Switching Time vs. Ambient Temperature Figure 12. Switching Time vs. Ambient Temperature Figure 13. Switching Time vs. Ambient Temperature Figure 14. Switching Time vs. Base-Emitter Resistance 0 10 20 30 40 50 60 70 80 90 10000 1000 100 10 1 0.1 I C E O – D A R K C U R R E N T ( n A ) TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C) 100 120-40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) 120-40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) 120-20-40 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) RBE – BASE-EMITTER RESISTANCE (kΩ) -40 -20 0 20 40 60 80 100 120 IF = 0 mA VCE = 10 V t – S W IT C H IN G T IM E ( μs ) t – S W IT C H IN G T IM E (μ s ) t – S W IT C H IN G T IM E (μ s ) t – S W IT C H IN G T IM E ( μs ) t – S W IT C H IN G T IM E (μ s ) 10 100 1000 10000 1 10 100 0 5 10 15 20 25 30 tPHL tPLH tf ts tr td IF = 10 mA VCC = 5 V RL = 1 kΩ RBE = 330 kΩ 0 5 10 15 20 25 30 tPHL tPLH tf ts tr td IF = 10 mA VCC = 5 V RL = 1 kΩ RBE = 100 kΩ Refer to Figure 15 for switching time circuit 0 4 8 12 16 20 tPHL tPLH tf ts tr td IF = 5 mA VCC = 5 V RL = 1 kΩ RBE = 330 kΩ Refer to Figure 15 for switching time circuit 0 4 8 12 16 20 tPHL tPLH tf ts tr td IF = 5 mA VCC = 5 V RL = 1 kΩ RBE = 100 kΩ Refer to Figure 15 for switching time circuit VCC = 5 V TA = 25°C tPHL, IF = 3 mA, RL = 3.3 kΩ t t PLH, IF = 1 mA, RL = 10 kΩ tPHL, IF = 1 mA, RL = 10 kΩ PHL, IF = 1.6 mA, RL = 4.7 kΩ tPLH IF = 1.6 mA RL = 4.7 kΩ tPLH IF = 3 mA RL = 3.3 kΩ Refer to Figure 15 for switching time circuit

MCT5211M Reviews

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5 / 5 (87)
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Cros*****rooks

January 1, 2020

I have used 2 of the 10 units so far and they work fine.

Sar*****Curry

July 26, 2019

Happy with purchase, would do business again

Joe*****ant

July 24, 2019

arrived well within time bracket, put this firm on my suppliers list, many thanks

Cris*****o Jha

July 23, 2019

This was a useful assortment of product that filled in a parts gap that I had on my electronic workbench. Thank you.

Zari*****Barton

July 8, 2019

2nd time buying these - quite good. Very fast shipping

Azale*****nklin

June 25, 2019

Best way to locate what I need, on a fast and efficient shipping! Keep up the good work!

Niko*****Stone

June 16, 2019

I was glad to find this product being sold at a great price. They were the perfect replacement.

Kade*****Lynch

May 13, 2019

Very good, fast shipping, super reliable seller.

Myl*****ixon

October 23, 2018

Perfectly satisfied with item. Top supplier on my list.

Elia*****mpson

September 9, 2018

happy with the IC and received with perfect packaging, good comunication with seller thanks.

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