MMDT3904-7

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DS30088 Rev. 8 - 2 1 of 3 MMDT3904 www.diodes.com
Diodes Incorporated MMDT3904 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  Epitaxial Planar Die Construction  Ideal for Low Power Amplification and Switching  Ultra-Small Surface Mount Package  Also Available in Lead Free Version Characteristic Symbol MMDT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient RJA 625 C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 C Features Maximum Ratings @ TA = 25C unless otherwise specified A M J LD B C H K G F C2 C2 B1 B1 E1 E1 E2 E2 B2 B2 C1 C1 Mechanical Data  Case: SOT-363, Molded Plastic  Case Material - UL Flammability Rating Classification 94V-0  Moisture sensitivity: Level 1 per J-STD-020A  Terminals: Solderable per MIL-STD-202, Method 208  Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 3, on Page1  Terminal Connections: See Diagram  Marking (See Page 2): K6N  Ordering & Date Code Information: See Page 2  Weight: 0.006 grams (approx.) Device Packaging Shipping MMDT3904-7 SOT-363 3000/Tape & Reel Ordering Information (Note 2) Notes: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMDT3904-7-F. SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J  0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25  0° 8° All Dimensions in mm

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DS30088 Rev. 8 - 2 2 of 3 MMDT3904 www.diodes.com Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 60  V IC = 10A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40  V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0  V IE = 10A, IC = 0 Collector Cutoff Current ICEX  50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL  50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 4) DC Current Gain hFE 40 70 100 60 30   300    IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT)  0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65  0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo  4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo  8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 k VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400  Output Admittance hoe 1.0 40 S Current Gain-Bandwidth Product fT 300  MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF  5.0 dB VCE = 5.0V, IC = 100A, RS = 1.0k f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td  35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mARise Time tr  35 ns Storage Time ts  200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mAFall Time tf  50 ns Notes: 4. Short duration test pulse used to minimize self-heating. Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Date Code Key K6N YMK6NYM Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W