Part Number | MMDT3904-7 |
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Manufacturer | Diodes Incorporated |
Description | TRANS 2NPN 40V 0.2A SOT363 |
Datasheet | MMDT3904-7 Datasheet |
Package | 6-TSSOP, SC-88, SOT-363 |
In Stock | 442,416 piece(s) |
Unit Price | Request a Quote |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Jan 28 - Feb 2 (Choose Expedited Shipping) |
Request for Quotation |
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Part Number # MMDT3904-7 (Transistors - Bipolar (BJT) - Arrays) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
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Manufacturer | Diodes Incorporated |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays |
Datasheet | MMDT3904-7Datasheet |
Package | 6-TSSOP, SC-88, SOT-363 |
Series | - |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Power - Max | 200mW |
Frequency - Transition | 300MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
DS30088 Rev. 8 - 2 1 of 3 MMDT3904 www.diodes.com Diodes Incorporated MMDT3904 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Also Available in Lead Free Version Characteristic Symbol MMDT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient RJA 625 C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 C Features Maximum Ratings @ TA = 25C unless otherwise specified A M J LD B C H K G F C2 C2 B1 B1 E1 E1 E2 E2 B2 B2 C1 C1 Mechanical Data Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 3, on Page1 Terminal Connections: See Diagram Marking (See Page 2): K6N Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Device Packaging Shipping MMDT3904-7 SOT-363 3000/Tape & Reel Ordering Information (Note 2) Notes: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMDT3904-7-F. SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° All Dimensions in mm
DS30088 Rev. 8 - 2 2 of 3 MMDT3904 www.diodes.com Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 60 V IC = 10A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 V IE = 10A, IC = 0 Collector Cutoff Current ICEX 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 4) DC Current Gain hFE 40 70 100 60 30 300 IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 k VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 Output Admittance hoe 1.0 40 S Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF 5.0 dB VCE = 5.0V, IC = 100A, RS = 1.0k f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mARise Time tr 35 ns Storage Time ts 200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mAFall Time tf 50 ns Notes: 4. Short duration test pulse used to minimize self-heating. Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Date Code Key K6N YMK6NYM Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W
Annal*****ingle
December 26, 2020
Kar***** Hall
December 16, 2020
Rub*****oto
December 14, 2020
Harm*****Boyer
December 3, 2020
Leila*****terjee
December 3, 2020
Aadh*****ecker
November 26, 2020
Jas*****tkins
November 26, 2020
Ish***** York
November 25, 2020
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