ON Semiconductor MMUN2233LT1G
For Reference Only
Part Number: MMUN2233LT1G
Manufacturer: ON Semiconductor
Description: Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: MMUN2233LT1G Datasheet
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|Transistor Type||NPN - Pre-Biased|
|Current - Collector (Ic) (Max)||100mA|
|Voltage - Collector Emitter Breakdown (Max)||50V|
|Resistor - Base (R1)||4.7 kOhms|
|Resistor - Emitter Base (R2)||47 kOhms|
|DC Current Gain (hFE) (Min) @ Ic, Vce||80 @ 5mA, 10V|
|Vce Saturation (Max) @ Ib, Ic||250mV @ 300µA, 10mA|
|Current - Collector Cutoff (Max)||500nA|
|Frequency - Transition||-|
|Power - Max||246mW|
|Mounting Type||Surface Mount|
|Package / Case||TO-236-3, SC-59, SOT-23-3|
|Supplier Device Package||SOT-23-3 (TO-236)|
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