MOCD207M

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 May 2016 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOCD207M, MOCD208M • Minimum BVCEO of 30 V Guaranteed – MOCD211M, MOCD213M, MOCD217M • Low LED Input Current Required for Easier Logic Interfacing – MOCD217M • Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing • Safety and Regulatory Approvals: – UL1577, 2,500 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications • Feedback Control Circuits • Interfacing and Coupling Systems of Different Potentials and Impedances • General Purpose Switching Circuits • Monitor and Detection Circuits Description These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting. Schematic Package Outline EMITTER 1 COLLECTOR 1ANODE 1 CATHODE 1 1 2 3 4 5 6 7 8 EMITTER 2 COLLECTOR 2ANODE 2 CATHODE 2 Figure 1. Schematic Figure 2. Package Outline

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 2 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 4000 Vpeak External Creepage  4 mm External Clearance  4 mm DTI Distance Through Insulation (Insulation Thickness)  0.4 mm TS Case Temperature (1) 150 °C IS,INPUT Input Current (1) 200 mA PS,OUTPUT Output Power (1) 300 mW RIO Insulation Resistance at TS, VIO = 500 V (1) > 109 

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 3 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Rating Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +125 °C TA Ambient Operating Temperature -40 to +100 °C TJ Junction Temperature -40 to +125 °C TSOL Lead Solder Temperature 260 for 10 seconds °C PD Total Device Power Dissipation @ TA = 25°C 240 mW Derate Above 25°C 2.94 mW/°C EMITTER IF Continuous Forward Current 60 mA IF (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25°C 90 mW Derate Above 25°C 0.8 mW/°C DETECTOR IC Continuous Collector Current 150 mA VCEO Collector-Emitter Voltage MOCD207M, MOCD208M, MOCD213M 70 V MOCD211M, MOCD217M 30 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 4 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Electrical Characteristics TA = 25°C unless otherwise specified. Symbol Parameter Device Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage MOCD217M IF = 1 mA 1.05 1.3 V MOCD213M IF = 10 mA 1.15 1.5 V MOCD207M, MOCD208M, MOCD211M IF = 30 mA 1.25 1.5 V IR Reverse Leakage Current All VR = 6 V 0.001 100 µA CIN Input Capacitance All 18 pF DETECTOR ICEO Collector-Emitter Dark Current All VCE = 10 V, TA = 25°C 1.0 50 nA VCE = 10 V, TA = 100°C 1.0 µA BVCEO Collector-Emitter Breakdown Voltage MOCD211M, MOCD217M IC = 100 µA 30 100 V MOCD207M, MOCD208M, MOCD213M IC = 100 µA 70 100 V BVECO Emitter-Collector Breakdown Voltage All IE = 100 µA 7 10 V CCE Collector-Emitter Capacitance All f = 1.0 MHz, VCE = 0 7 pF COUPLED CTR Collector-Output Current MOCD207M IF = 10 mA, VCE = 5 V 100 200 % MOCD208M IF = 10 mA, VCE = 5 V 40 125 % MOCD211M IF = 10 mA, VCE = 5 V 20 % MOCD213M IF = 10 mA, VCE = 5 V 100 % MOCD217M IF = 1 mA, VCE = 5 V 100 % VCE(SAT) Collector-Emitter Saturation Voltage MOCD207M, MOCD208M, MOCD211M, MOCD213M IC = 2 mA, IF = 10 mA 0.4 V MOCD217M IC = 100 µA, IF = 1 mA 0.4 V ton Turn-On Time All IC = 2 mA, VCC = 10 V, RL = 100  (Figure 8) 7.5 µs toff Turn-Off Time All IC = 2 mA, VCC = 10 V, RL = 100  (Figure 8) 5.7 µs tr Rise Time All IC = 2 mA, VCC = 10 V, RL = 100  (Figure 8) 3.2 µs tf Fall Time All IC = 2 mA, VCC = 10 V, RL = 100  (Figure 8) 4.7 µs

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 5 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Electrical Characteristics TA = 25°C unless otherwise specified. Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage t = 1 Minute 2500 VACRMS CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 10 11 

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 6 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Typical Performance Curves Figure 4. Output Curent vs. Input Current I F – LED INPUT CURRENT (mA) 0.1 1 10 100 I C – O U T P U T C O L L E C T O R C U R R E N T ( N O R M A L IZ E D ) 0.01 0.1 1 10 VCE = 5 V NORMALIZED TO IF = 10 mA Figure 5. Output Current vs. Ambient Temperature TA – AMBIENT TEMPERATURE (°C) -80 -60 -40 -20 0 20 40 60 80 100 120 I C – O U T P U T C O L L E C T O R C U R R E N T ( N O R M A L IZ E D ) 0.1 1 10 NORMALIZED TO TA = 25°C Figure 6. Output Current vs. Collector-Emitter Voltage VCE – COLLECTOR-EMITTER VOLTAGE (V) 0 1 2 3 4 5 6 7 8 9 10 I C – O U T P U T C O L L E C T O R C U R R E N T ( N O R M A L IZ E D ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I F = 10 mA NORMALIZED TO VCE = 5 V Figure 7. Dark Current vs. Ambient Temperature TA – AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 I C E O – C O L L E C T O R - E M IT T E R D A R K C U R R E N T ( n A ) 0.1 1 10 100 1000 10000 VCE = 10 V IF – LED FORWARD CURRENT (mA) V F – F O R W A R D V O LT A G E ( V ) Figure 3. LED Forward Voltage vs. Forward Current 1 10 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = –55°C TA = 25°C TA = 100°C

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 7 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Switching Time Test Circuit and Waveforms Figure 8. Switching Time Test Circuit and Waveforms OUTPUT PULSE INPUT PULSE tr tf INPUT IF RL RBE VCC = 10 V OUTPUT ton 10% 90% toff IC Adjust IF to produce IC = 2 mA

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOCD2xxM Rev. 4.10 8 M O C D 2xxM — 8-p in S O IC D u al-C h an n el P h o to tran sisto r O u tp u t O p to co u p ler Reflow Profile Figure 9. Reflow Profile Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum Time (seconds) Te m p er at u re ( °C ) Time 25°C to Peak 260 240 220 200 180 160 140 120 100 80 60 40 20 0 TL ts tL tP TP Tsmax Tsmin 120 Preheat Area Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S 240 360