Part Number | MRF151G |
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Manufacturer | M/A-Com Technology Solutions |
Description | FET RF 2CH 125V 175MHZ 375-04 |
Datasheet | MRF151G Datasheet |
Package | 375-04 |
In Stock | 2,000 piece(s) |
Unit Price | $ 112.0600 * |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Jan 25 - Jan 30 (Choose Expedited Shipping) |
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Part Number # MRF151G (Transistors - FETs, MOSFETs - RF) is manufactured by M/A-Com Technology Solutions and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
For MRF151G specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add MRF151G with quantity into BOM. Heisener.com does NOT require any registration to request a quote of MRF151G.
Manufacturer | M/A-Com Technology Solutions |
Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF |
Datasheet | MRF151GDatasheet |
Package | 375-04 |
Series | - |
Transistor Type | 2 N-Channel (Dual) Common Source |
Frequency | 175MHz |
Gain | 16dB |
Voltage - Test | 50V |
Current Rating | 40A |
Noise Figure | - |
Current - Test | 500mA |
Power - Output | 300W |
Voltage - Rated | 125V |
Package / Case | 375-04 |
Supplier Device Package | 375-04, Style 2 |
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Features Guaranteed Performance at 175 MHz, 50 V: Output Power — 300 W Gain — 14 dB (16 dB Typ) Efficiency — 50% Low Thermal Resistance — 0.35°C/W Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Package Outline
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. V1 MRF151G 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
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