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MRF6V2150NBR5

hotMRF6V2150NBR5

MRF6V2150NBR5

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Part Number MRF6V2150NBR5
Manufacturer NXP
Description FET RF 110V 220MHZ TO272-4
Datasheet MRF6V2150NBR5 Datasheet
Package TO-272BB
In Stock 315 piece(s)
Unit Price $ 64.5724 *
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # MRF6V2150NBR5 (Transistors - FETs, MOSFETs - RF) is manufactured by NXP and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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MRF6V2150NBR5 Specifications

ManufacturerNXP
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
Datasheet MRF6V2150NBR5Datasheet
PackageTO-272BB
Series-
Transistor TypeLDMOS
Frequency220MHz
Gain25dB
Voltage - Test50V
Current Rating-
Noise Figure-
Current - Test450mA
Power - Output150W
Voltage - Rated110V
Package / CaseTO-272BB
Supplier Device PackageTO-272 WB-4

MRF6V2150NBR5 Datasheet

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MRF6V2150NR1 MRF6V2150NBR1 1 RF Device Data Freescale Semiconductor RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -- 0.5, +110 Vdc Gate--Source Voltage VGS -- 0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF6V2150N Rev. 4, 4/2010 Freescale Semiconductor Technical Data MRF6V2150NR1 MRF6V2150NBR1 10--450 MHz, 150 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2150NR1 PARTS ARE SINGLE--ENDED (Top View) RFout/VDS Figure 1. Pin Connections RFout/VDS RFin/VGS RFin/VGS Note: Exposed backside of the package is the source terminal for the transistor. © Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.

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2 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Drain--Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) V(BR)DSS 110 — — Vdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 1.62 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.26 — Vdc Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 93 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 163 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps 23.5 25 26.5 dB Drain Efficiency ηD 66 68.3 — % Input Return Loss IRL — --17 --9 dB Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW Power Gain f = 27 MHz f = 450 MHz Gps — — 32.3 22.9 — — dB Drain Efficiency f = 27 MHz f = 450 MHz ηD — — 78.7 57.6 — — % Input Return Loss f = 27 MHz f = 450 MHz IRL — — --10.6 --17.6 — — dB ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.

Page 4

MRF6V2150NR1 MRF6V2150NBR1 3 RF Device Data Freescale Semiconductor Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic — 220 MHz Z8 0.443″ x 0.170″ Microstrip Z9 2.360″ x 0.170″ Microstrip Z10 0.502″ x 0.170″ Microstrip Z11 0.443″ x 0.082″ Microstrip PCB Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Z1 0.352″ x 0.082″ Microstrip Z2 0.944″ x 0.082″ Microstrip Z3 1.480″ x 0.082″ Microstrip Z4 0.276″ x 0.220″ Microstrip Z5 0.434″ x 0.220″ Microstrip Z6, Z7 0.298″ x 0.630″ Microstrip Z1 RF INPUT C12 Z2 Z3 Z4 Z5 Z6 DUT Z9 C23 RF OUTPUT Z10 C5 B1 VBIAS VSUPPLY C3 + C4C2 + R1 C18 C19C17 C20 + C1 + C7C6 B2 Z7 Z11Z8 B3 C22C21 R2 L3C9C8 C11C10 C13 L1 L2 C14 C15 C16 Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz Part Description Part Number Manufacturer B1, B2 95 Ω, 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount 2743019447 Fair--Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM063M Illinois Capacitor C2 22 μF, 35 V Tantalum Chip Capacitor T494X226K035AT Kemet C3 10 μF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet C4, C17 39 K pF Chip Capacitors ATC200B393KT50XT ATC C5, C18 22 K pF Chip Capacitors ATC200B203KT50XT ATC C6, C11, C19 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7, C8, C15, C16 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C9, C12, C14, C23 1000 pF Chip Capacitors ATC100B102JT50XT ATC C10 220 nF Chip Capacitor C1812C224K5RAC Kemet C13 75 pF Chip Capacitor ATC100B750JT500XT ATC C20 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi--Con C21 30 pF Chip Capacitor ATC100B300JT500XT ATC C22 33 pF Chip Capacitor ATC100B330JT500XT ATC L1 4 Turn #18 AWG, 0.18″ ID None None L2 82 nH Inductor 1812SMS--82NJL Coilcraft L3 17.5 nH Inductor B06TJL Coilcraft R1 270 Ω, 1/4 W Chip Resistor CRCW12062700FKEA Vishay R2 27 Ω, 1/4 W Chip Resistor CRCW12064R75FKEA Vishay

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4 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 220 MHz * Stacked + + MRF6V2150N/NB Rev. 3 C1 C2 C3 B1 C7 C U T O U T A R E A B2 C4 C5 C6 C8 R1 C9 R2 C12 C13 C10 C11 L3 C22 C21 C23 C14 L1 L2 C17 C18 C19 C15* C16* B3 C20

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MRF6V2150NR1 MRF6V2150NBR1 5 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 50 1 1000 0 2010 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage C ,C AP AC IT AN C E (p F) 30 Ciss 1 100 1 TC = 25°C 10 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 5. DC Safe Operating Area I D ,D R AI N C U R R EN T (A M PS ) 40 5 0 DRAIN VOLTAGE (VOLTS) 20 120 Figure 6. DC Drain Current versus Drain Voltage I D ,D R AI N C U R R EN T (A M PS ) 60 21 25 1 23 22 26 Pout, OUTPUT POWER (WATTS) CW Figure 7. CW Power Gain versus Output Power G ps ,P O W ER G AI N (d B) VDD = 50 Vdc f = 220 MHz 100 10 40 100 24 VGS = 3 V Coss Crss 80 100 2.75 V 2.63 V 2.5 V 2.25 V 27 100 --60 --10 5 Pout, OUTPUT POWER (WATTS) PEP --25 --30 --35 --40 10 100 Figure 8. Third Order Intermodulation Distortion versus Output Power IM D ,T H IR D O R D ER IN TE R M O D U LA TI O N D IS TO RT IO N (d Bc ) VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz Two--Tone Measurements, 100 kHz Tone Spacing --45 --50 32 48 58 22 2624 56 54 52 50 Pin, INPUT POWER (dBm) Figure 9. CW Output Power versus Input Power P o ut ,O U TP U T PO W ER (d Bm ) 28 30 P3dB = 52.61 dBm (182.39 W) Actual Ideal P1dB = 52.27 dBm (168.66 W) VDD = 50 Vdc, IDQ = 450 mA f = 220 MHz 200 3 2 1 0 10 200 563 mA IDQ = 675 mA IDQ = 225 mA 336 mA Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 4 450 mA 337 mA 225 mA --55 --15 --20 450 mA 563 mA 685 mA 900 mA 300

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6 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 TYPICAL CHARACTERISTICS Figure 10. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW G ps ,P O W ER G AI N (d B) VDD = 20 V 25 V 200 14 26 0 50 18 16 100 150 24 22 IDQ = 450 mA f = 220 MHz 30 V 35 V 40 V 50 V 20 45 V 35 35 55 10 25_C TC = --30_C 85_C 2515 50 45 40 Pin, INPUT POWER (dBm) Figure 11. Power Output versus Power Input P o ut ,O U TP U T PO W ER (d Bm ) VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 20 30 21 28 5 10 80 10 26 24 70 60 50 40 30 20 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power G ps ,P O W ER G AI N (d B) η D ,D R AI N EF FI C IE N C Y (% ) ηD 27 25 23 100 200 25_C TC = --30_C 85_C 85_C Gps VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 25_C --30_C 22 250 108 90 TJ, JUNCTION TEMPERATURE (°C) Figure 13. MTTF versus Junction Temperature This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 150 W CW, and ηD = 68.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 106 105 110 130 150 170 190 M TT F (H O U R S) 210 230

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MRF6V2150NR1 MRF6V2150NBR1 7 RF Device Data Freescale Semiconductor Zo = 10Ω Zload Zsource f = 220 MHz f = 220 MHz VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW f MHz Zsource Ω Zload Ω 220 2.45 + j6.95 3.90 + j5.50 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 14. Series Equivalent Source and Load Impedance — 220 MHz Zsource Z load Input Matching Network Device Under Test Output Matching Network

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8 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 Figure 15. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 27 MHz C U T O U T A R E A C14 27 MHz 272--WB C15 B1 C6 B2 C7 C8 L3*, R3*, ** T1 L1 C9 C10 C11 C12 C13 L4*, R4*, ** C1 L2* C2 C3 R1, R2 C5 T2 C4 C16 C17 C18 C20 B3 C19 Rev. 1 Table 7. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz Part Description Part Number Manufacturer B1, B3 95 Ω, 100 MHz Long Ferrite Beads 2743021447 Fair--Rite B2 47 Ω, 100 MHz Short Ferrite Bead 2743019447 Fair--Rite C1, C4, C5, C16 100 pF Chip Capacitors ATC100B101JT500XT ATC C2 620 pF Chip Capacitor ATC100B621JT200XT ATC C3 1000 pF Chip Capacitor ATC100B102JT50XT ATC C6 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC--TU Kemet C7 0.1 μF Chip Capacitor CDR33BX104AKYS Kemet C8 0.22 μF, 50 V Chip Capacitor C1812C224K5RAC--TU Kemet C9, C12 22K pF Chip Capacitors ATC200B223KT50XT ATC C10, C18 0.01 μF, 100 V Chip Capacitors C1825C103K1GAC--TU Kemet C11, C19 0.1 pF Chip Capacitors ATC100B0R1BT500XT ATC C13, C17 39K pF Chip Capacitors ATC200B393KT50XT ATC C14 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C15 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C20 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp L1 47 nH Inductor 1812SMS--47NJ Coilcraft L2* 9 Turn, #16 AWG, Inductor, Hand Wound, 0.250″ ID Copper Wire L3* 10 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID Copper Wire L4* 9 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID Copper Wire R1, R2 3.3 Ω, 1/2 W Chip Resistors RK73B2ETTD3R3J KOA R3*, ** 1 KΩ, 1/4 W Resistor MCCFR0W4J0102A50 Multicomp R4*, ** 510 Ω, 1/2 W Resistor MCRC1/2G511JT--RH Multicomp T1 RF600 Transformer 16:1 Impedance Ratio RF600LF--16 Comm Concepts T2 RF1000 Transformer 9:1 Impedance Ratio RF1000LF--9 Comm Concepts * Leaded components mounted over traces. ** Resistor is mounted at center of inductor coil.

Page 10

MRF6V2150NR1 MRF6V2150NBR1 9 RF Device Data Freescale Semiconductor Figure 16. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 450 MHz + C U T O U T A R E A 450 MHz 272--WB C10 Rev. 1 C9 B1 C8 C6 C7 B2 C5 L2 L1 C11 C2 C1 C3 C4 C21 C20 C19 B3 C22 L4 L3 C18 C13 C12 C14 C15 C16 C17 Table 8. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part Description Part Number Manufacturer B1, B2, B3 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C2 15 pF Chip Capacitor ATC100B150JT500XT ATC C3, C5, C17, C18 240 pF Chip Capacitors ATC100B241JT200XT ATC C4 36 pF Chip Capacitor ATC100B360JT500XT ATC C6, C21 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7, C20 10K pF Chip Capacitors ATC200B103KT50XT ATC C8, C19 22K pF Chip Capacitors ATC200B223KT50XT ATC C9 10 μF, 35 V Tantalum Capacitor T491D106K035AS Kemet C10 22 μF, 35 V Tantalum Capacitor T491X226K035AS Kemet C11 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Capacitor C12 18 pF Chip Capacitor ATC100B180JT500XT ATC C13 10 pF Chip Capacitor ATC100B100JT500XT ATC C14 0.6 -- 4.5 pF Variable Capacitor 27271SL Johanson C15 3 pF Chip Capacitor ATC100B3R0CT500XT ATC C16 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C22 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp L1, L2 5 nH Mini Spring Air Core Inductors A02TKLC Coilcraft L3 17.5 nH Mini Spring Air Core Inductor B06TJLC Coilcraft L4 82 nH Midi Spring Air Core Inductor 1812SMS--82NJLC Coilcraft PCB Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 DS2054 DS

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Aver*****eadows

July 18, 2020

Your technical assistance and professionalism cannot be complained!

Lyl*****Pitts

July 17, 2020

All resistors exactly -0.01%. Pretty good.

Amal*****aneja

July 10, 2020

This was a useful assortment of product that filled in a parts gap that I had on my electronic workbench. Thank you.

Mar***** Tak

July 2, 2020

I have used 2 of the 10 units so far and they work fine.

Mile*****hose

June 28, 2020

Fast delivery well packed and as described.

Kia*****oda

June 18, 2020

These did exactly what I needed them to do. Electricity only flows in one direction. Perfect.

Rosa*****Nanda

June 13, 2020

Those components are in stock shipped fast and arrive promptly. Really Fast!

Sebas*****Parmar

June 8, 2020

Those components that were in stock shipped fast and arrived promptly.

Sams*****amacho

June 1, 2020

I am a novice technician. I really rely on reviews to help guide me, as I do not have anyone to assist me with electronics. I purchased these items and report I am happy with the purchase. I took a chance and it was one of the better choices I made.

Ans***** Pham

May 31, 2020

Reasonable prices, fast shipping, and the best customer service I've ever experienced! Absolutely will share it to my friends.

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