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MUN5136T1

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MUN5136T1

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Part Number MUN5136T1
Manufacturer ON Semiconductor
Description TRANS PREBIAS PNP 202MW SC70-3
Datasheet MUN5136T1 Datasheet
Package SC-70, SOT-323
In Stock 132,000 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 7 - Aug 12 (Choose Expedited Shipping)
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Part Number # MUN5136T1 (Transistors - Bipolar (BJT) - Single, Pre-Biased) is manufactured by ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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MUN5136T1 Specifications

ManufacturerON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet MUN5136T1Datasheet
PackageSC-70, SOT-323
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)100k
Resistor - Emitter Base (R2) (Ohms)100k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max202mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3 (SOT323)

MUN5136T1 Datasheet

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© Semiconductor Components Industries, LLC, 2012 March, 2012 − Rev. 12 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PNP SILICON BIAS RESISTOR TRANSISTORS SC−70/SOT−323 CASE 419 STYLE 3 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R1 R2 MARKING DIAGRAM ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. http://onsemi.com 6x = Device Code M = Date Code*  = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 6x M  1

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW °C/W Thermal Resistance, Junction-to-Ambient RJA 618 (Note 1) 403 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RJL 280 (Note 1) 332 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping† MUN5111T1G, SMUN5111T1G SC−70/SOT−323 (Pb−Free) 6A 10 10 3,000/Tape & Reel MUN5112T1G, SMUN5112T1G SC−70/SOT−323 (Pb−Free) 6B 22 22 3,000/Tape & Reel MUN5113T1G, SMUN5113T1G SC−70/SOT−323 (Pb−Free) 6C 47 47 3,000/Tape & Reel MUN5113T3G SC−70/SOT−323 (Pb−Free) 6C 47 47 10,000/Tape & Reel MUN5113T1G SC−70/SOT−323 (Pb−Free) 6C 47 47 3,000/Tape & Reel MUN5114T1G, SMUN5114T1G SC−70/SOT−323 (Pb−Free) 6D 10 47 3,000/Tape & Reel MUN5115T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6E 10 ∞ 3,000/Tape & Reel MUN5116T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6F 4.7 ∞ 3,000/Tape & Reel MUN5130T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6G 1.0 1.0 3,000/Tape & Reel MUN5131T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6H 2.2 2.2 3,000/Tape & Reel MUN5132T1G, NSVMUN5132T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6J 4.7 4.7 3,000/Tape & Reel MUN5133T1G, SMUN5133T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6K 4.7 47 3,000/Tape & Reel MUN5134T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6L 22 47 3,000/Tape & Reel MUN5135T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6M 2.2 47 3,000/Tape & Reel MUN5136T1G SC−70/SOT−323 (Pb−Free) 6N 100 100 3,000/Tape & Reel MUN5137T1G SC−70/SOT−323 (Pb−Free) 6P 47 22 3,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets.

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 − − − − − − − − − − − − − − Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/MUN5132T1/NSVMUN5132T1/ MUN5133T1/SMUN5133T1/MUN5134T1 VCE(sat) − − − − 0.25 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5113T1 (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) MUN5136T1 (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN5137T1 VOL − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 VOH 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − Vdc Input Resistor MUN5111T1, SMUN5111T1 MUN5112T1, SMUN5112T1 MUN5113T1, SMUN5113T1 MUN5114T1, SMUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1, NSVMUN5132T1 MUN5133T1, SMUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k Resistor Ratio MUN5111T1/SMUN5111T1/MUN5112T1/SMUN5112T1/ MUN5113T1/SMUN5113T1/MUN5136T1 MUN5114T1/SMUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1/NSVMUN5132T1 MUN5133T1/SMUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 Figure 1. Derating Curve 250 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) P D , P O W E R D IS S IP A T IO N ( M IL LI W A T T S ) RJA = 833°C/W

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 5 TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1G, SMUN5111T1G V in , I N P U T V O LT A G E ( V O LT S ) I C , C O LL E C T O R C U R R E N T ( m A ) h F E , D C C U R R E N T G A IN ( N O R M A LI Z E D ) Figure 2. VCE(sat) versus IC 100 10 1 0.1 0.01 0.001 0 Vin, INPUT VOLTAGE (VOLTS) TA=-25°C 25°C 1 2 3 4 5 6 7 8 9 10 Figure 3. DC Current Gain Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current 0.01 20 IC, COLLECTOR CURRENT (mA) V C E (s at ), M A X IM U M C O LL E C T O R V O LT A G E ( V O LT S ) 0.1 1 0 40 50 1000 1 10 100 IC, COLLECTOR CURRENT (mA) TA=75°C -25°C 100 10 0 IC, COLLECTOR CURRENT (mA) 0.1 1 10 100 10 20 30 40 50 TA=-25°C 25°C 75°C 75°C IC/IB = 10 500 10 20 30 40 4 3 1 2 VR, REVERSE BIAS VOLTAGE (VOLTS) C ob , C A P A C IT A N C E ( pF ) 0 TA=-25°C 25°C 75°C 25°C VCE = 10 V f = 1 MHz lE = 0 V TA = 25°C VO = 5 V VO = 0.2 V

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 6 TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1G, SMUN5112T1G V in , I N P U T V O LT A G E ( V O LT S ) I C , C O LL E C T O R C U R R E N T ( m A ) h F E , D C C U R R E N T G A IN ( N O R M A LI Z E D ) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 1000 10 IC, COLLECTOR CURRENT (mA) 100 10 1 100 Figure 9. Output Capacitance IC, COLLECTOR CURRENT (mA) 0 10 20 30 VO = 0.2 V TA=-25°C 75°C 100 10 1 0.1 40 50 Figure 10. Output Current versus Input Voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 Vin, INPUT VOLTAGE (VOLTS) 5 6 7 8 9 10 Figure 11. Input Voltage versus Output Current 0.01 V C E (s at ), M A X IM U M C O LL E C T O R V O LT A G E ( V O LT S ) 0.1 1 10 40 IC, COLLECTOR CURRENT (mA) 0 20 50 75°C 25°C TA=-25°C 500 10 20 30 40 4 3 2 1 0 VR, REVERSE BIAS VOLTAGE (VOLTS) C ob , C A P A C IT A N C E ( pF ) 25°C IC/IB = 10 25°C -25°C VCE = 10 V TA=75°C f = 1 MHz lE = 0 V TA = 25°C 75°C 25°C TA=-25°C VO = 5 V

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 7 TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1G, SMUN5113T1G V in , I N P U T V O LT A G E ( V O LT S ) I C , C O LL E C T O R C U R R E N T ( m A ) h F E , D C C U R R E N T G A IN ( N O R M A LI Z E D ) Figure 12. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 1 0.1 0.01 0 10 20 30 40 75°C 25°C V C E (s at ), M A X IM U M C O LL E C T O R V O LT A G E ( V O LT S ) Figure 13. DC Current Gain 1000 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) -25°C Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 10 1 0.1 0.01 0.001 0 10 25°C Vin, INPUT VOLTAGE (VOLTS) -25°C 500 10 20 30 40 1 0.8 0.6 0.4 0.2 0 VR, REVERSE BIAS VOLTAGE (VOLTS) C ob , C A P A C IT A N C E ( pF ) 1 2 3 4 5 6 7 8 9 Figure 16. Input Voltage versus Output Current 100 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) TA=-25°C 25°C 75°C 50 IC/IB = 10 TA=-25°C 25°C TA=75°C f = 1 MHz lE = 0 V TA = 25°C VO = 5 V TA=75°C VO = 0.2 V

Page 9

MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 8 TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1G, SMUN5114T1G 10 1 0.1 0 10 20 30 40 50 100 10 1 0 2 4 6 8 10 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , I N P U T V O LT A G E ( V O LT S ) I C , C O LL E C T O R C U R R E N T ( m A ) h F E , D C C U R R E N T G A IN ( N O R M A LI Z E D ) Figure 17. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 0 20 40 60 80V C E (s at ), M A X IM U M C O LL E C T O R V O LT A G E ( V O LT S ) Figure 18. DC Current Gain 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) C ob , C A P A C IT A N C E ( pF ) Figure 21. Input Voltage versus Output Current IC, COLLECTOR CURRENT (mA) 1 0.1 0.01 0.001 -25°C 25°C TA=75°CVCE = 10 V 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 MHz lE = 0 V TA = 25°C LOAD +12 V Figure 22. Inexpensive, Unregulated Current Source Typical Application for PNP BRTs 25°C IC/IB = 10 TA=-25°C TA=75°C 25°C -25°C VO = 5 V VO = 0.2 V 25°C TA=-25°C 75°C 75°C

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MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series http://onsemi.com 9 TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1G, NSVMUN5132T1G −25°C 75°C 25°C −25°C Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 27. Input Voltage versus Output Current IC, OUTPUT CURRENT (mA) IC, COLLECTOR CURRENT (mA) 1 0.1 35302520151050 IC, COLLECTOR CURRENT (mA) 120200 100 10 10.01 1000 V C E (s at ), M A X IM U M C O LL E C T O R V O LT A G E ( V O LT S ) h F E , D C C U R R E N T G A IN 10 4 6050403020100 0 C ob , C A P A C IT A N C E ( pF ) 1 2 5 7 100 6543210 0.01 1 10 I C , C O LL E C T O R C U R R E N T ( m A ) 10987 10 302520151050 0.1 1 454035 50 V in , I N P U T V O LT A G E ( V O LT S ) 75°C 25°C 75°C 25°C 75°C 25°C 40 60 80 100 3 6 8 9 0.1 −25°C −25°C

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Estr***** Greer

July 14, 2020

Heisener.com is a good company. Pleasant transaction, communicative , thank you

Brig*****illis

July 4, 2020

I wanted something that would handle voltage spikes. Worked perfectly. I plan to use four more.

Cruz*****istian

June 16, 2020

The order process is easy and user friendly, very helpful customer service, always fast shipping.

Beck*****Bailey

June 15, 2020

The are the right size and type and do what they are designed to do.

Ali***** Vasa

June 13, 2020

A convenient and small package. I have used 2 of the 10 units so far and they work fine.

Ami*****ravo

June 12, 2020

Items arrived well pakaged, reasonable postage and as described. Top seller

Anna*****a Cox

June 11, 2020

Went well this time Now have the IC and very pleased.

Stan*****Dudley

June 9, 2020

Fast shipping, work as designed. Made some circuitry with these components and they work well.

Chel*****Hull

June 4, 2020

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

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June 2, 2020

Arrived as described and well packaged. Sent very quickly after payment.

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