Contact Us
SalesDept@heisener.com 0755-83210559 ext. 805

MW6IC2420NBR1

hotMW6IC2420NBR1

MW6IC2420NBR1

For Reference Only

Part Number MW6IC2420NBR1
Manufacturer NXP
Description IC POWER AMP 20W 28V TO-272-16
Datasheet MW6IC2420NBR1 Datasheet
Package TO-272-16 Variant, Flat Leads
In Stock 961 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
Request for Quotation

Part Number # MW6IC2420NBR1 (RF Amplifiers) is manufactured by NXP and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For MW6IC2420NBR1 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add MW6IC2420NBR1 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of MW6IC2420NBR1.

MW6IC2420NBR1 Specifications

ManufacturerNXP
CategoryRF/IF and RFID - RF Amplifiers
Datasheet MW6IC2420NBR1Datasheet
PackageTO-272-16 Variant, Flat Leads
Series-
Frequency2.11GHz ~ 2.17GHz
P1dB-
Gain19.5dB
Noise Figure-
RF TypeISM
Voltage - Supply28V
Current - Supply210mA
Test Frequency-
Package / CaseTO-272-16 Variant, Flat Leads
Supplier Device PackageTO-272 WB-16

MW6IC2420NBR1 Datasheet

Page 1

Page 2

MW6IC2420NBR1 1 RF Device Data Freescale Semiconductor RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on--chip matching that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel Figure 1. Functional Block Diagram Figure 2. Pin Connections (Top View) GND NC RFin VGS1 GND RFout / VDS2 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 VGS2 9 10 GND 11 Quiescent Current Temperature Compensation (1) VDS1 RFin VGS1 RFout/VDS2 VGS2 VDS1 NC NC NC VDS1 NC NC VDS1 Note: Exposed backside of the package is the source terminal for the transistors. 1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987,Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12 Document Number: MW6IC2420N Rev. 3, 12/2010 Freescale Semiconductor Technical Data 2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER MW6IC2420NBR1 CASE 1329--09 TO--272 WB--16 PLASTIC © Freescale Semiconductor, Inc., 2007--2010. All rights reserved.

Page 3

2 RF Device Data Freescale Semiconductor MW6IC2420NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +6 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 23 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case W--CDMA Application Stage 1, 28 Vdc, IDQ = 210 mA (Pout = 4.5 W Avg.) Stage 2, 28 Vdc, IDQ = 370 mA RθJC 1.8 1 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 25.5 28 30 dB Power Added Efficiency PAE 13.7 15 — % Intermodulation Distortion IM3 — --43 --40 dBc Adjacent Channel Power Ratio ACPR — --46 --43 dBc Input Return Loss IRL — --15 --10 dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 4

MW6IC2420NBR1 3 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110--2170 MHz Video Bandwidth @ 20 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) VBW — 30 — MHz Quiescent Current Accuracy over Temperature with 18 kΩ Gate Feed Resistors (--10 to 85°C) (1) ∆IQT — ±5 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.2 — dB Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW Φ — 2 — ° Average Group Delay @ Pout = 1 W CW Including Output Matching Delay — 2.8 — ns Part--to--Part Insertion Phase Variation @ Pout = 1 W CW, Six Sigma Window ∆Φ — 18 — ° Table 6. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 110 mA, IDQ2 = 370 mA, 2110--2170 MHz Saturated Pulsed Output Power (8 μsec(on), 1 msec(off)) Psat — 60 — W 1. Refer toAN1977,QuiescentCurrent Thermal TrackingCircuit in theRF IntegratedCircuit Family and toAN1987,QuiescentCurrentControl for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 5

4 RF Device Data Freescale Semiconductor MW6IC2420NBR1 Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz Z6 0.189″ x 0.237″ Microstrip Z7 0.127″ x 0.054″ Microstrip Z9 0.182″ x 0.054″ Microstrip Z10, Z11 1.073″ x 0.054″ Microstrip PCB Taconic RF35, 0.020″, εr = 3.5 Z1 0.510″ x 0.054″ Microstrip Z2 0.300″ x 0.054″ Microstrip Z3, Z8 0.410″ x 0.054″ Microstrip Z4 0.138″ x 0.237″ Microstrip Z5 0.086″ x 0.237″ Microstrip R1 Z2 RF INPUT VGS1 Z4 Z5 RF OUTPUT C8 VDS2 1 2 3 4 5 6 7 8 14 13 1211 10 9 15 16 NC NC NC NC NC DUT Z3 C1 VDS1 Z10 Quiescent Current Temperature Compensation Z1 Z11 Z6 Z7 Z8 C4 C12 C7C14 C15 C13 C5 R2 C3 VGS VGS2 NC NC C2 C11 Z9 C10C9 C6 Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 2.2 μF Chip Capacitors C32225X5R1H225MT TDK C5, C13 100 nF Chip Capacitors C1206C104K1KAC Kemet C6, C7 0.5 pF Chip Capacitors 08051J0R5BS AVX C8 6.8 pF Chip Capacitor 08051J6R8BS AVX C9 2.2 pF Chip Capacitor 08051J2R2BS AVX C10 1 pF Chip Capacitor 08051J1R0BS AVX C11, C12 5.6 pF Chip Capacitors 08051J5R6BS AVX C14 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C15 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 5 kΩ Potentiometer CMS Cermet Multi--turn 3224W--1--502E BournsL IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 6

MW6IC2420NBR1 5 RF Device Data Freescale Semiconductor Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz C1 MW6IC2420 VDS1 Rev. 0 VDS2 VGS C14 C15 C5 C13 R1 R2 C3 C4 C12 C10C9 C7 C6 C8 C2 C11 L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 7

6 RF Device Data Freescale Semiconductor MW6IC2420NBR1 TYPICAL CHARACTERISTICS — 2450 MHz G ps ,P O W ER G AI N (d B) 1 0 40 Gps Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VDD IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz 10 30 20 10 16 24 23 21 19 PA E, PO W ER AD D ED EF FI C IE N C Y (% ) PAE 32 V 30 V 22 20 18 17 35 25 15 5 VDD = 32 V 28 V 30 V 28 V 50 G ps ,P O W ER G AI N (d B) 1 0 40 Gps Pout, OUTPUT POWER (WATTS) CW Figure 6. Power Gain and Power Added Efficiency versus CW Output Power 10 30 20 10 18 22 21.5 20.5 19.5 PA E, PO W ER AD D ED EF FI C IE N C Y (% ) 21 20 19 18.5 35 25 15 5 0.5 50 PAE VDD = 28 V IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz G ps ,P O W ER G AI N (d B) 0.5 Gps Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of Total IDQ VDD = 28 V f = 2450 MHz 16 24 23 21 19 22 20 18 17 IDQ = 620 mA 580 mA 1 10 50 540 mA 250 109 90 TJ, JUNCTION TEMPERATURE (°C) Figure 8. MTTF versus Junction Temperature This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 20 W Avg., and PAE = 27%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 108 107 104 110 130 150 170 190 M TT F (H O U R S) 210 230 2nd Stage 1st Stage 106 105 L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 8

MW6IC2420NBR1 7 RF Device Data Freescale Semiconductor Zo = 50Ω Zload Zsource f = 2450 MHzf = 2450 MHz VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 W CW f MHz Zsource Ω Zload Ω 2450 54.8 + j16.6 0.42 + j4.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zsource Z load Input Matching Network Device Under Test Output Matching Network Figure 9. Series Equivalent Source and Load Impedance L IF E T IM E B U Y L A S T O R D E R 1 JU L 11 L A S T S H IP 30 JU N 12

Page 9

8 RF Device Data Freescale Semiconductor MW6IC2420NBR1 PACKAGE DIMENSIONS

Page 10

MW6IC2420NBR1 9 RF Device Data Freescale Semiconductor

MW6IC2420NBR1 Reviews

Average User Rating
5 / 5 (124)
★ ★ ★ ★ ★
5 ★
112
4 ★
12
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Alan*****rewer

December 27, 2021

Excellent, high quality product at a reasonable price. Timely delivery. Highly recommend product and vendor.

MW6IC2420NBR1 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

MW6IC2420NBR1 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

MW6IC2420NBR1 Related Products

SIT9120AC-2DF-XXS75.000000X SIT9120AC-2DF-XXS75.000000X SiTIME, -20 TO 70C, 7050, 10PPM, 2.25V-3, 6-SMD, No Lead, - View
13008-011KESB 13008-011KESB Vishay Sprague, CAP TANT 470UF 6.3V 10% 2917, 3017 (7644 Metric), - View
1808Y0250151KCR 1808Y0250151KCR Knowles Syfer, CAP CER 150PF 25V C0G/NP0 1808, 1808 (4520 Metric), - View
MPR3YT MPR3YT Bivar Inc., PNL MNT W/ WIRE 590NM 40MCD YLW, -, - View
RLR07C1001FMBSL RLR07C1001FMBSL Vishay Dale, RES 1K OHM 1% 1/4W AXIAL, Axial, - View
RNCF1210BTC430R RNCF1210BTC430R Stackpole Electronics Inc., RES SMD 430 OHM 0.1% 1/3W 1210, 1210 (3225 Metric), - View
RNCF1206BKC76K8 RNCF1206BKC76K8 Stackpole Electronics Inc., RES SMD 76.8K OHM 0.1% 1/4W 1206, 1206 (3216 Metric), - View
ERA-2AEB9531X ERA-2AEB9531X Panasonic Electronic Components, RES SMD 9.53KOHM 0.1% 1/16W 0402, 0402 (1005 Metric), - View
105-222H 105-222H API Delevan Inc., FIXED IND 2.2UH 235MA 1.7 OHM, 2-SMD, No Lead, - View
DTS24W21-11PD DTS24W21-11PD TE Connectivity Deutsch Connectors, CONN RCPT 11POS JAM NUT W/PINS, -, - View
D38999/24ZC8PB D38999/24ZC8PB Amphenol Aerospace Operations, CONN RCPT MALE 8POS GOLD CRIMP, -, - View
EBA43DCTI-S288 EBA43DCTI-S288 Sullins Connector Solutions, CONN EDGE DUAL FMALE 86POS 0.125, -, - View
Payment Methods
Delivery Services

Quick Inquiry

MW6IC2420NBR1

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about MW6IC2420NBR1?

0755-83210559 ext. 805 SalesDept@heisener.com heisener007 3008774228 Send Message

Featured Products

SHT21

SENSOR HUMID/TEMP 3V I2C 2% SMD

K1300E70

SIDAC 120-138V 1A TO92

DF40C-100DS-0.4V(51)

CONN RCPT 100POS 0.4MM SMD GOLD

MMBT2222ALT1G

TRANS NPN 40V 0.6A SOT23

IXGX120N60B

IGBT 600V 200A 660W TO247

MCP6042T-I/SN

IC OPAMP GP 14KHZ RRO 8SOIC

XC6VSX475T-1FF1759I

IC FPGA 840 I/O 1759FCBGA

ADUM1100ARZ

DGTL ISO 2.5KV GEN PURP 8SOIC

1206L110THYR

FUSE PTC RESET 8V 1.10A 1206

MAX8556ETE+T

IC REG LINEAR POS ADJ 4A 16TQFN

View More >>

MW6IC2420NBR1 Tags

  • MW6IC2420NBR1
  • MW6IC2420NBR1 PDF
  • MW6IC2420NBR1 datasheet
  • MW6IC2420NBR1 specification
  • MW6IC2420NBR1 image
  • NXP
  • NXP MW6IC2420NBR1
  • buy MW6IC2420NBR1
  • MW6IC2420NBR1 price
  • MW6IC2420NBR1 distributor
  • MW6IC2420NBR1 supplier
  • MW6IC2420NBR1 wholesales

MW6IC2420NBR1 is Available in