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MW7IC2240NBR1

hot MW7IC2240NBR1

MW7IC2240NBR1

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Part Number MW7IC2240NBR1
Manufacturer NXP
Description IC PWR AMP RF 4W TO-272-16
Datasheet MW7IC2240NBR1 Datasheet
Package TO-272-16 Variant, Flat Leads
In Stock 5114 piece(s)
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MW7IC2240NBR1

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MW7IC2240NBR1 Specifications

ManufacturerNXP
CategoryRF/IF and RFID - RF Amplifiers
Datasheet MW7IC2240NBR1 Datasheet
PackageTO-272-16 Variant, Flat Leads
Series-
Frequency2.11GHz ~ 2.17GHz
P1dB46dBm (40W)
Gain30dB
RF TypeW-CDMA
Voltage - Supply32V
Current - Supply420mA
Test Frequency2.14GHz
Package / CaseTO-272-16 Variant, Flat Leads
Supplier Device PackageTO-272 WB-16

MW7IC2240NBR1 Datasheet

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 1 RF Device Data Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi -stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB Power Added Efficiency — 17.5% ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts CW Pout. • Typical Pout @ 1 dB Compression Point  30 Watts CW GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805-1880 MHz Power Gain — 33 dB Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -77 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz Power Gain — 31 dB Power Added Efficiency — 50% Features • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. Document Number: MW7IC2040N Rev. 1, 11/2009 Freescale Semiconductor Technical Data MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 1930-1990 MHz, 1805-1880 MHz, 4 W AVG., 28 V SINGLE W-CDMA, GSM EDGE, GSM RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886-01 TO-270 WB-16 PLASTIC MW7IC2040NR1 CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC2040GNR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW7IC2040NBR1 Figure 1. Functional Block Diagram Quiescent Current Temperature Compensation (1) VDS1 RFin VGS1 RFout/VDS2 VGS2 VDS1 (Top View) GND NC RFin VGS1 GND VDS1 RFout/VDS2 GND VGS2 VDS1 GND 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 VGS2 VGS1 NC NC NC Figure 2. Pin Connections Note: Exposed backside of the package is the source terminal for the transistors. © Freescale Semiconductor, Inc., 2009. All rights reserved.

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2 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 25 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case W-CDMA (Pout = 4 W Avg., Case Temperature = 73°C) Stage 1, 28 Vdc, IDQ1 = 130 mA Stage 2, 28 Vdc, IDQ2 = 330 mA GSM EDGE (Pout = 16 W Avg., Case Temperature = 76°C) Stage 1, 28 Vdc, IDQ1 = 130 mA Stage 2, 28 Vdc, IDQ2 = 330 mA GSM (Pout = 40 W Avg., Case Temperature = 79°C) Stage 1, 28 Vdc, IDQ1 = 130 mA Stage 2, 28 Vdc, IDQ2 = 330 mA RθJC 4.0 1.5 4.1 1.4 3.9 1.3 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 130 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 130 mAdc, Measured in Functional Test) VGG(Q) 13 14.5 16 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 3 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 140 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 330 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 330 mAdc, Measured in Functional Test) VGG(Q) 7 8 9 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.2 0.39 1.2 Vdc Stage 2 — Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 246 — pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg., f = 1932.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 29.5 32 34.5 dB Power Added Efficiency PAE 16 17.5 — % Adjacent Channel Power Ratio ACPR — -50 -46 dBc Input Return Loss IRL — -15 -8 dB Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, 1930-1990 MHz Pout @ 1 dB Compression Point, CW P1dB — 30 — W IMD Symmetry @ 22 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 60 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz Quiescent Current Accuracy over Temperature (2) with 5.6 kΩ Gate Feed Resistors ( -30 to 85°C) ΔIQT — ±3 — % Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg. GF — 1.2 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 30 W CW Φ — 0.5 — ° Average Group Delay @ Pout = 30 W CW, f = 1960 MHz Delay — 2.5 — ns Part - to-Part Insertion Phase Variation @ Pout = 30 W CW, f = 1960 MHz, Six Sigma Window ΔΦ — 33 — ° Gain Variation over Temperature (-30°C to +85°C) ΔG — 0.029 — dB/°C Output Power Variation over Temperature (-30°C to +85°C) ΔP1dB — 0.003 — dBm/°C 1. Part internally matched both on input and output. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)

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4 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical W-CDMA Performance — 1800 MHz (In Freescale W-CDMA 1805-1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg., 1805-1880 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps — 33.5 — dB Power Added Efficiency PAE — 16.5 — % Adjacent Channel Power Ratio ACPR — -50 — dBc Input Return Loss IRL — -6 — dB Typical GSM EDGE Performance — 1800 MHz (In Freescale GSM EDGE 1805-1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1805-1880 MHz EDGE Modulation Power Gain Gps — 33 — dB Power Added Efficiency PAE — 35 — % Error Vector Magnitude EVM — 1.5 — % rms Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — -77 — dBc Typical GSM EDGE Performance — 1900 MHz (In Freescale GSM EDGE 1930-1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1930-1990 MHz EDGE Modulation Power Gain Gps — 30 — dB Power Added Efficiency PAE — 33 — % Error Vector Magnitude EVM — 1.5 — % rms Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — -80 — dBc Typical CW Performance (In Freescale GSM EDGE 1930-1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 W CW, 1805-1880 MHz and 1930-1990 MHz Power Gain Gps — 31 — dB Power Added Efficiency PAE — 50 — % Input Return Loss IRL — -15 — dB Pout @ 1 dB Compression Point P1dB — 45 — W

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 5 RF Device Data Freescale Semiconductor Z10 0.3419″ x 0.1725″ Microstrip Z11 0.3419″ x 0.4671″ Microstrip Z12 0.0830″ x 0.4220″ Microstrip Z13, Z14 0.0830″ x 0.2855″ Microstrip Z15 0.0830″ x 0.9030″ Microstrip Z16 0.0830″ x 0.2499″ Microstrip PCB Rogers RO4350, 0.030″, εr = 3.5 Z1 0.0826″ x 0.5043″ Microstrip Z2 0.0826″ x 0.3639″ Microstrip Z3 0.0826″ x 0.4258″ Microstrip Z4 0.0826″ x 0.3639″ Microstrip Z5 0.0826″ x 0.3060″ Microstrip Z6 0.0826″ x 0.9290″ Microstrip Z7 0.0600″ x 0.1273″ Microstrip Z8, Z9 0.0800″ x 1.3684″ Microstrip Figure 3. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930-1990 MHz R1 RF INPUT VGG1 Z10 RF OUTPUT C5 C3 VDD2 1 2 3 4 5 6 7 8 14 13 1211 10 9 15 16DUT Z6 C1 VDD1 Z8 Quiescent Current Temperature Compensation Z1 Z9 Z11 Z12 C11 VGG2 C12 C10 C2 Z15 C17 C6 C13 + C4 C18 C8 C9 Z7 C14 R2 C16 C15 Z16 Z13 C7 Z14 Z2 Z3 Z4 Z5 NC NC G1 G2 NC NC G2 G1 Table 6. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930-1990 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C6, C7, C8, C9, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C12 2.2 μF, 16 V Chip Capacitor C1206C225K4RAC Kemet C13 470 μF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26-RH Multicomp C14, C16 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC C15 1 pF Chip Capacitor ATC100B1R0BT500XT ATC C17, C18 1 μF, 50 V Chip Capacitors GRM21BR71H105KA12L Murata R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay

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6 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 Figure 4. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930-1990 MHz C U T O U T A R E A C14 R1 R2 C12 C10 C2 C1 C11 C4 C18 C8 C9 C16 C15 C5 C6 C7 C13 C3 C17 MW7IC2040N Rev. 2 TO272WB−16

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 7 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IR L, I N P U T R E T U R N L O S S ( dB ) 1880 IRL Gps ACPR f, FREQUENCY (MHz) Figure 5. Single Carrier W-CDMA Broadband Performance @ Pout = 4 Watts Avg. −18 −10 −12 −14 −16 27 37 36 35 −52 18 17 16 15 −47 −48 −49 −50 P A E , P O W E R A D D E D E F F IC IE N C Y ( % ) G ps , P O W E R G A IN ( dB ) 34 33 32 31 30 29 1900 1920 1940 1960 1980 2000 2020 2040 14 −51 −20 A C P R ( dB c) Figure 6. Power Gain versus Output Power @ IDQ1 = 130 mA 29 35 1 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ1 = 130 mA f = 1960 MHz 33 32 31 10 50 G ps , P O W E R G A IN ( dB ) 34 IDQ2 = 495 mA 248 mA 28 30 165 mA 330 mA413 mA PAE VDD = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 130 mA IDQ2 = 330 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Figure 7. Power Gain versus Output Power @ IDQ2 = 330 mA 28 35 1 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ2 = 330 mA f = 1960 MHz 33 32 31 10 50 G ps , P O W E R G A IN ( dB ) 34 IDQ1 = 195 mA 30 65 mA 163 mA 29 98 mA 80 mA Figure 8. Intermodulation Distortion Products versus Two-Tone Spacing TWO−TONE SPACING (MHz) 10 −60 −10 −20 −30 −50 1 100 IM D , IN T E R M O D U LA T IO N D IS T O R T IO N ( dB c) −40 IM3−U IM3−L IM5−U IM5−L IM7−L IM7−U VDD = 28 Vdc, Pout = 22 W (PEP), IDQ1 = 130 mA IDQ2 = 330 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz

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8 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 TYPICAL CHARACTERISTICS Figure 9. Power Gain, ACPR and Power Added Efficiency versus Output Power 34 Pout, OUTPUT POWER (WATTS) 32 30 28 8 33 31 29 1 16 24 40 5 65 55 45 35 25 15 P A E , P O W E R A D D E D E F F IC IE N C Y ( % ) 32 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR A C P R ( dB c) −70 −10 −20 −30 −50 −40 −60 G ps , P O W E R G A IN ( dB ) Gps Figure 10. Single-Carrier W-CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power PAE 40 Pout, OUTPUT POWER (WATTS) AVG. 36 32 28 38 34 30 1 10 60 5 50 45 40 35 25 15 P A E , P O W E R A D D E D E F F IC IE N C Y ( % ) VDD = 28 Vdc, IDQ1 = 130 mA IDQ2 = 330 mA, f = 1960 MHz ACPR A C P R ( dB c) −64 −10 −34 −40 −52 −46 −58 G ps , P O W E R G A IN ( dB ) Gps 22 24 26 10 20 30 TC = −30C 85C 25C −30C25C 85C −30C PAE Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Figure 11. Broadband Frequency Response 15 40 1400 f, FREQUENCY (MHz) 30 25 1500 G A IN ( dB ) 35 Gain 1600 1700 1800 1900 2000 2300 2400 IRL −20 0 −4 −8 −12 −16 IR L (d B ) 20 VDD = 28 Vdc Pout = 25 dBm IDQ1 = 130 mA IDQ2 = 330 mA 2100 2200 −28 −22 −16

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 9 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 250 109 90 TJ, JUNCTION TEMPERATURE (°C) Figure 12. MTTF versus Junction Temperature This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 106 104 110 130 150 170 190 M T T F ( H O U R S ) 210 230 105 108 1st Stage 2nd Stage W-CDMA TEST SIGNAL 0.0001 100 0 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single-Carrier Test Signal 10 1 0.1 0.01 0.001 2 4 6 8 P R O B A B IL IT Y ( % ) W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Input Signal 101 3 5 7 9 −60 −100 10 (d B ) −20 −30 −40 −50 −70 −80 −90 3.84 MHz Channel BW 7.21.8 5.43.60−1.8−3.6−5.4−9 9 f, FREQUENCY (MHz) Figure 14. Single-Carrier W-CDMA Spectrum −7.2 −ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW −10 0

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10 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 Zo = 50 Ω f = 2040 MHz f = 1880 MHz Zin Zo = 10 Ω Zload f = 2040 MHz f = 1880 MHz VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg. f MHz Zin  Zload  1880 42.97 - j25.07 6.10 - j5.01 1900 44.01 - j25.91 5.92 - j4.71 1920 45.14 - j26.72 5.76 - j4.44 1940 46.38 - j27.48 5.62 - j4.21 1960 47.71 - j28.19 5.51 - j4.01 1980 49.16 - j28.83 5.40 - j3.83 2000 50.71 - j29.40 5.27 - j3.71 2020 52.36 - j29.87 5.13 - j3.60 2040 54.12 - j30.23 4.99 - j3.52 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 15. Series Equivalent Input and Load Impedance Z in Z load Device Under Test Output Matching Network

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 11 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 17 P3dB = 47.74 dBm (59 W) Pin, INPUT POWER (dBm) 46 43 18 21 Actual Ideal P1dB = 47.06 dBm (51 W) 47 45P ou t, O U T P U T P O W E R ( dB m ) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V 48 49 50 53 161514131211 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1930 MHz44 51 52 19 20 Test Impedances per Compression Level Zsource Ω Zload Ω P1dB 49.30 + j8.40 3.60 - j4.50 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V @ 1930 MHz 17 P3dB = 47.88 dBm (61 W) Pin, INPUT POWER (dBm) 46 18 23 Actual Ideal P1dB = 47.37 dBm (55 W) 47 45P ou t, O U T P U T P O W E R ( dB m ) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V 48 49 50 53 1613 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1990 MHz 51 44 43 1514 52 19 20 21 22 Test Impedances per Compression Level Zsource Ω Zload Ω P1dB 50.0 - j4.90 3.40 - j5.10 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 1990 MHz

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12 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 430 mA, TC = 25°C, 50 Ohm System) f S11 S21 S12 S22 MHz |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 1500 0.595 -118.5 2.110 -151.3 0.00174 -71.2 0.888 -160.3 1550 0.545 -147.4 3.851 178.9 0.00192 -86.7 0.876 170.4 1600 0.482 -176.5 7.415 144.7 0.00294 -114.0 0.867 137.1 1650 0.398 156.7 15.620 103.6 0.00445 -149.9 0.872 94.6 1700 0.332 146.1 37.544 45.5 0.00746 177.5 0.884 29.4 1750 0.542 116.5 62.685 -48.6 0.00940 110.9 0.650 -93.8 1800 0.488 59.6 50.513 -124.5 0.00642 67.4 0.454 157.6 1850 0.373 8.7 42.562 -178.8 0.00497 40.5 0.419 105.4 1900 0.294 -46.7 38.690 132.3 0.00438 19.1 0.416 75.9 1950 0.269 -107.0 36.138 85.3 0.00416 -7.3 0.443 54.0 2000 0.297 -161.3 33.838 39.7 0.00382 -28.5 0.497 31.7 2050 0.342 154.0 32.122 -4.7 0.00350 -50.7 0.553 8.0 2100 0.389 114.8 30.682 -48.5 0.00342 -69.9 0.602 -16.3 2150 0.420 78.2 29.594 -92.4 0.00354 -84.6 0.640 -41.0 2200 0.424 41.2 28.734 -137.7 0.00396 -101.3 0.666 -65.4 2250 0.388 2.9 27.277 175.2 0.00425 -125.1 0.689 -89.2 2300 0.302 -37.2 24.568 126.4 0.00483 -153.1 0.720 -113.5 2350 0.188 -78.8 20.404 78.5 0.00470 174.4 0.753 -138.7 2400 0.066 -123.6 16.281 33.8 0.00415 148.7 0.778 -163.6 2450 0.034 55.1 12.661 -8.6 0.00388 124.4 0.806 171.0 2500 0.104 12.1 9.738 -48.2 0.00368 106.5 0.826 145.2 2550 0.154 -17.7 7.577 -85.7 0.00328 77.5 0.842 119.7 2600 0.191 -44.6 5.905 -121.7 0.00281 57.2 0.851 94.4 2700 0.250 -94.4 3.679 169.8 0.00245 37.8 0.856 45.7 2750 0.278 -118.4 2.921 136.7 0.00271 19.5 0.854 22.1 2800 0.309 -142.0 2.330 104.5 0.00373 2.2 0.854 -0.5 2850 0.343 -165.3 1.874 72.7 0.00250 -19.6 0.849 -23.5 2900 0.382 171.0 1.518 41.5 0.00286 -40.7 0.851 -46.0 2950 0.420 147.7 1.226 10.6 0.00313 -71.3 0.850 -68.4 3000 0.459 124.6 0.985 -19.8 0.00262 -98.0 0.851 -91.1 3050 0.498 102.9 0.782 -49.0 0.00101 -108.5 0.847 -113.4 3100 0.542 79.6 0.641 -76.9 0.00279 -84.9 0.850 -136.3 3150 0.577 56.4 0.531 -105.1 0.00504 -110.7 0.856 -159.8 3200 0.603 33.6 0.439 -133.3 0.00526 -152.0 0.857 176.4 3250 0.628 11.0 0.363 -161.1 0.00587 -176.6 0.858 152.0 3300 0.654 -11.9 0.303 171.0 0.00659 160.1 0.857 126.8 3350 0.661 -35.4 0.250 143.7 0.00909 129.6 0.853 101.4 3400 0.678 -57.0 0.208 115.4 0.00691 98.1 0.845 74.5 3450 0.692 -80.2 0.157 88.5 0.00718 80.9 0.745 42.1 3500 0.704 -103.7 0.158 71.5 0.01000 46.8 0.760 43.7

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 13 RF Device Data Freescale Semiconductor W-CDMA — 1805-1880 MHz Z8, Z9 0.0800″ x 1.1139″ Microstrip Z10 0.3419″ x 0.1725″ Microstrip Z11 0.3419″ x 0.4671″ Microstrip Z12 0.0830″ x 0.4220″ Microstrip Z13 0.0830″ x 0.9030″ Microstrip Z14 0.0830″ x 0.2499″ Microstrip PCB Rogers RO4350, 0.030″, εr = 3.5 Z1 0.0826″ x 0.5043″ Microstrip Z2 0.0826″ x 0.3639″ Microstrip Z3 0.0826″ x 0.4258″ Microstrip Z4 0.0826″ x 0.3639″ Microstrip Z5 0.0826″ x 0.3459″ Microstrip Z6 0.0826″ x 0.9115″ Microstrip Z7 0.0600″ x 0.1273″ Microstrip Figure 18. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1805-1880 MHz R1 RF INPUT VGG1 Z10 RF OUTPUT C5 C3 VDD2 1 2 3 4 5 6 7 8 14 13 1211 10 9 15 16DUT Z6 C1 VDD1 Z8 Quiescent Current Temperature Compensation Z1 Z9 Z11 Z12 C11 VGG2 C12 C10 C2 Z13 C6 C13 + C4 C8 C9 Z7 C14 R2 C16 Z14 C7 Z2 Z3 Z4 Z5 NC NC G1 G2 NC NC G2 G1 C15 Table 8. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1805-1880 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C6, C7, C8, C9, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C12 2.2 μF, 16 V Chip Capacitor C1206C225K4RAC Kemet C13 470 μF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26-RH Multicomp C14, C15, C16 1 pF Chip Capacitors ATC100B1R0BT500XT ATC R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay

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14 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 W-CDMA — 1805-1880 MHz Figure 19. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805-1880 MHz C U T O U T A R E A C14 R1 R2 C12 C10 C2 C1 C11 C4 C8 C9 C16 C15 C5 C6 C7 C13 C3 MW7IC2040N Rev. 2 TO272WB−16

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 15 RF Device Data Freescale Semiconductor GSM EDGE — 1805-1880 MHz Z8, Z9 0.0800″ x 1.3354″ Microstrip Z10 0.3419″ x 0.1725″ Microstrip Z11 0.3419″ x 0.4671″ Microstrip Z12 0.0830″ x 0.3575″ Microstrip Z13 0.0830″ x 0.9675″ Microstrip Z14 0.0830″ x 0.2499″ Microstrip PCB Rogers RO4350, 0.030″, εr = 3.5 Z1 0.0826″ x 0.5043″ Microstrip Z2 0.0826″ x 0.3639″ Microstrip Z3 0.0826″ x 0.4258″ Microstrip Z4 0.0826″ x 0.2315″ Microstrip Z5 0.0826″ x 0.1324″ Microstrip Z6 0.0826″ x 1.2574″ Microstrip Z7 0.0600″ x 0.1273″ Microstrip Figure 20. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1805-1880 MHz R1 RF INPUT VGG1 Z10 RF OUTPUT C5 C3 VDD2 1 2 3 4 5 6 7 8 14 13 1211 10 9 15 16DUT Z6 C1 VDD1 Z8 Quiescent Current Temperature Compensation Z1 Z9 Z11 Z12 C11 VGG2 C12 C10 C2 Z13 C6 C13 + C4 C8 C9 Z7 C14 R2 C16 Z14 C7 Z2 Z3 Z4 NC NC G1 G2 NC NC G2 G1 Z5 C15 Table 9. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1805-1880 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C6, C7, C8, C9, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C12 2.2 μF, 16 V Chip Capacitor C1206C225K4RAC Kemet C13 470 μF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26-RH Multicomp C14 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C15 1 pF Chip Capacitor ATC100B1R0BT500XT ATC C16 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay

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16 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 GSM EDGE — 1805-1880 MHz Figure 21. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805-1880 MHz C U T O U T A R E A C14 R1 R2 C12 C10 C2 C1 C11 C4 C8 C9 C16 C15 C5 C6 C7 C13 C3 MW7IC2040N Rev. 2 TO272WB−16

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 17 RF Device Data Freescale Semiconductor GSM EDGE — 1930-1990 MHz Z8, Z9 0.0800″ x 1.6274″ Microstrip Z10 0.3419″ x 0.1725″ Microstrip Z11 0.3419″ x 0.4671″ Microstrip Z12 0.0830″ x 0.4685″ Microstrip Z13 0.0830″ x 0.8565″ Microstrip Z14 0.0830″ x 0.2499″ Microstrip PCB Rogers RO4350, 0.030″, εr = 3.5 Z1 0.0826″ x 0.5043″ Microstrip Z2 0.0826″ x 0.3639″ Microstrip Z3 0.0826″ x 0.4258″ Microstrip Z4 0.0826″ x 0.3639″ Microstrip Z5 0.0826″ x 0.6544″ Microstrip Z6 0.0826″ x 0.6030″ Microstrip Z7 0.0600″ x 0.1273″ Microstrip Figure 22. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930-1990 MHz R1 RF INPUT VGG1 Z10 RF OUTPUT C5 C3 VDD2 1 2 3 4 5 6 7 8 14 13 1211 10 9 15 16DUT Z6 C1 VDD1 Z8 Quiescent Current Temperature Compensation Z1 Z9 Z11 Z12 C11 VGG2 C12 C10 C2 Z13 C6 C13 + C4 C8 C9 Z7 C14 R2 C16 Z14 C7 Z2 Z3 Z4 Z5 NC NC G1 G2 NC NC G2 G1 C15 Table 10. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930-1990 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C6, C7, C8, C9, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C12 2.2 μF, 16 V Chip Capacitor C1206C225K4RAC Kemet C13 470 μF, 63 V Electrolytic Capacitor, Radial MCGPR63V477M13X26-RH Multicomp C14 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C15, C16 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC R1, R2 5.6 KΩ, 1/4 W Chip Resistors CRCW12065601FKEA Vishay

Page 19

18 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 GSM EDGE — 1930-1990 MHz Figure 23. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930-1990 MHz C U T O U T A R E A C14 R1 R2 C12 C10 C2 C1 C11 C4 C8 C9 C16 C15 C5 C6 C7 C13 C3 MW7IC2040N Rev. 2 TO272WB−16

Page 20

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 19 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

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20 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 21 RF Device Data Freescale Semiconductor

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22 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 23 RF Device Data Freescale Semiconductor

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24 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 25 RF Device Data Freescale Semiconductor

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26 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

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MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 27 RF Device Data Freescale Semiconductor

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28 RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2009 • Initial Release of Data Sheet 1 Nov. 2009 • Updated Human Body Model ESD from Class 1C to 1B to reflect Human Body Model actual test data, p. 2 • Fig. 13, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single-Carrier Test Signal and Fig. 14, Single-Carrier W-CDMA Spectrum updated to show the undistorted input test signal, p. 9 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 28 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 28

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