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NDC7002N

hot NDC7002N

NDC7002N

For Reference Only

Part Number NDC7002N
Manufacturer Fairchild/ON Semiconductor
Description MOSFET 2N-CH 50V 0.51A SSOT6
Datasheet NDC7002N Datasheet
Package SOT-23-6 Thin, TSOT-23-6
In Stock 376470 piece(s)
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NDC7002N

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NDC7002N Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet NDC7002N Datasheet
PackageSOT-23-6 Thin, TSOT-23-6
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25��C510mA
Rds On (Max) @ Id, Vgs2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
Power - Max700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT?-6

NDC7002N Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features ____________________________________________________________________________________________ Absolute Maximum RatingsTA = 25°C unless otherwise noted Symbol Parameter NDC7002N Units VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage - Continuous 20 V ID Drain Current - Continuous (Note 1a) 0.51 A - Pulsed 1.5 PD Maximum Power Dissipation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W NDC7002N.SAM 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. 1 5 4 6 3 2 SOT-6 (SuperSOTTM-6) These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch. © 1997 Fairchild Semiconductor Corporation

Page 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V 1 µA TJ = 125°C 500 IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 2.5 V TJ = 125°C 0.8 1.5 2.2 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.51 A 1 2 Ω TJ = 125°C 1.7 3.5 VGS = 4.5 V, ID = 0.35 A 1.6 4 ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 1.5 A gFS Forward Transconductance VDS = 10 V, ID = 0.51 A 400 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 20 pF Coss Output Capacitance 13 pF Crss Reverse Transfer Capacitance 5 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = 25 V, ID = 0.25 A, VGS = 10 V, RGEN = 25 Ω 6 20 nS tr Turn - On Rise Time 6 20 tD(off) Turn - Off Delay Time 11 20 tf Turn - Off Fall Time 5 20 Qg Total Gate Charge VDS = 25 V, ID = 0.51 A, VGS = 10 V 1 nC Qgs Gate-Source Charge 0.19 nC Qgd Gate-Drain Charge 0.33 nC NDC7002N.SAM

Page 5

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Source Current 0.51 A ISM Maximum Pulse Source Current (Note 2) 1.5 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.51 A (Note 2) 0.8 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD(t) = TJ−TARθJ A(t) = TJ−TA RθJ C+RθCA(t) = I D 2 (t) × RDS(ON ) TJ Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 130oC/W when mounted on a 0.125 in2 pad of 2oz cpper. b. 140oC/W when mounted on a 0.005 in2 pad of 2oz cpper. c. 180oC/W when mounted on a 0.0015 in2 pad of 2oz cpper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC7002N.SAM 1a 1b 1c

Page 6

NDC7002N.SAM 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN -S O U R C E C U R R E N T (A ) 6.0 V =10VGS DS D 8.0 7.0 3.5 4.0 4.5 5.0 5.5 3.0 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS TA N C E J V = 10VGS I = 0.51AD R , N O R M A LI ZE D D S (O N ) -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1 1.1 1.2 T , JUNCTION TEMPERATURE (°C) G A TE -S O U R C E T H R E S H O LD V O LT A G E J I = 250µAD V = VDS GS V , N O R M A LI ZE D th 0 0.3 0.6 0.9 1.2 1.5 0.5 1 1.5 2 2.5 3 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E D V = 3.5V GS R , N O R M A LI ZE D D S (o n) 6.0 4.0 4.5 5.0 5.5 10 8.0 7.0 0 0.3 0.6 0.9 1.2 1.5 0.5 1 1.5 2 2.5 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E T = 125°CJ 25°C D V = 10V GS -55°C R , N O R M A LI ZE D D S (o n) Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. 1 2 3 4 5 6 7 8 0 0.3 0.6 0.9 1.2 1.5 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) 25°C 125°C V = 10VDS GS D T = -55°CJ

Page 7

NDC7002N.SAM -50 -25 0 25 50 75 100 125 150 0.88 0.92 0.96 1 1.04 1.08 1.12 1.16 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E B R E A K D O W N V O LT A G E I = 250µAD B V , N O R M A LI ZE D D S S J 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 0.5 1 1.5 V , BODY DIODE FORWARD VOLTAGE (V) I , R E V E R S E D R A IN C U R R E N T (A ) T = 125°CJ 25°C -55°C V = 0VGS SD S 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 Q , GATE CHARGE (nC) V , G A TE -S O U R C E V O LT A G E (V ) g G S I = 0.51AD V = 25V DS 0.1 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 50 100 V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E (p F) DS C iss f = 1 MHz V = 0VGS C oss C rss Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Typical Electrical Characteristics (continued) 0 0.3 0.6 0.9 1.2 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) 25°C 125°C V = 10VDS GS D T = -55°CJ Figure 11. Transconductance Variation with Drain Current and Temperature.

Page 8

NDC7002N.SAM Typical Thermal Characteristics 0 0.2 0.4 0.6 0.8 1 0.6 0.7 0.8 0.9 1 1.1 1.2 2oz COPPER MOUNTING PAD AREA (in ) S TE A D Y -S TA TE P O W E R D IS S IP A TI O N (W ) 2 1c 1 b 1a 4.5"x5" FR-4 Board T = 25 C Sti l l Air A o 0 0.025 0.05 0.075 0.1 0.125 0.35 0.4 0.45 0.5 0.55 2oz COPPER MOUNTING PAD AREA (in ) I , S TE A D Y -S TA TE D R A IN C U R R E N T (A ) 2 1c 1 b 1a 4.5"x5" FR-4 Board T = 25 C Sti l l Air V = 10V A o GS D Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. Figure 12. SOT-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 1 2 5 10 20 50 70 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) DS D RD S(O N) LIM IT V = 10V SINGLE PULSE R = See Note 1c T = 25°C GS A θJA 1s 100ms 100us DC 10ms 1ms Figure 14. Maximum Safe Operating Area. 0 .0001 0 .001 0 .01 0 .1 1 10 100 300 0.01 0.02 0.05 0 .1 0 .2 0 .5 1 t , TIME (sec) TR A N S IE N T TH E R M A L R E S IS TA N C E 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 r( t), N O R M A LI ZE D E FF E C TI V E Duty Cycle, D = t / t1 2 R (t) = r(t) * R R = See Note 1c θJAθJA θJA T - T = P * R (t)θJAAJ P(pk) t 1 t 2 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.

Page 9

TRADEMARKS ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. SyncFET™ TinyLogic™ UHC™ VCX™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8  Rev. D

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