NDH8304P

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May 1997 NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features ___________________________________________________________________________________________ Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter NDH8304P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1) -2.7 A - Pulsed -10 PD Maximum Power Dissipation (Note 1) 0.8 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W NDH8304P Rev.C SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. -2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V RDS(ON) = 0.095 Ω @ VGS = -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. 1 5 7 8 2 6 3 4 © 1997 Fairchild Semiconductor Corporation

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA TJ= 55°C -10 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 µA -0.4 -0.7 -1 V TJ= 125°C -0.3 -0.5 -0.8 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.7 A 0.061 0.07 Ω TJ= 125°C 0.087 0.125 VGS = -2.7 V, ID = -2.3 A 0.082 0.095 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A VGS = -2.7 V, VDS = -5 V -3 gFS Forward Transconductance VDS = -5 V, ID = -2.7 A 8 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 865 pF Coss Output Capacitance 415 pF Crss Reverse Transfer Capacitance 150 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 11 22 ns tr Turn - On Rise Time 25 50 ns tD(off) Turn - Off Delay Time 78 150 ns tf Turn - Off Fall Time 55 100 ns Qg Total Gate Charge VDS = -10 V, ID = -2.7 A, VGS = -4.5 V 16 23 nC Qgs Gate-Source Charge 2.4 nC Qgd Gate-Drain Charge 5.1 nC NDH8304P Rev.C

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current -0.67 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.7 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD(t) = TJ−TARθJA(t) = TJ−TA RθJC+RθCA(t ) = I D 2 (t) × RDS(ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8304P Rev.C

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NDH8304P Rev.C Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. -4-3-2-10 -15 -12 -9 -6 -3 0 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN -S O U R C E C U R R E N T (A ) DS D -3.5 -2.0 -3.0 -2.5 -1.5 V =-4.5VGS -2.7 -15-12-9-6-30 0.5 1 1.5 2 2.5 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E D R , N O R M A LI ZE D D S (o n) -2.7 -4.5 -2.5 -3.0 -3.5 V = -2.0VGS -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS TA N C E J R , N O R M A LI ZE D D S (O N ) V = -4.5VGS I = -2.7AD -2.5-2-1.5-1-0.5 -8 -6 -4 -2 0 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) V = -5VDS GS D T = -55°C J 125°C 25°C -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 T , JUNCTION TEMPERATURE (°C) G A TE -S O U R C E T H R E S H O LD V O LT A G E J V , N O R M A LI ZE D G S (th ) I = -250µAD V = VGSDS -15-12-9-6-30 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E D R , N O R M A LI ZE D D S (o n) V = -4.5VGS T = 125°CJ 25°C -55°C

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NDH8304P Rev.C Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Typical Electrical Characteristics Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. -50 -25 0 25 50 75 100 125 150 0.94 0.96 0.98 1 1.02 1.04 1.06 1.08 1.1 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E B R E A K D O W N V O LT A G E I = -250µAD J B V , N O R M A LI ZE D D S S 0 .1 0 .2 0 .5 1 2 5 10 20 100 200 300 500 1000 1500 2500 -V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E (p F) DS C iss f = 1 MHz V = 0 VGS C oss C rss 0 5 10 15 20 0 1 2 3 4 5 Q , GATE CHARGE (nC) -V , G A TE -S O U R C E V O LT A G E (V ) V = -5VDSI = -2.7A -15V g G S -10VD 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.5 1 3 10 -V , BODY DIODE FORWARD VOLTAGE (V) -I , R E V E R S E D R A IN C U R R E N T (A ) T = 125°CJ 25°C -55°C V = 0VGS SD S D S -VDD R L VOUT VGS DUT VIN RGEN G 10% 50% 90% 10% 90% 90% 50%V IN VOUT on off d(off) frd(on) t t t ttt INVERTED 10% PULSE WIDTH