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NDS8934

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NDS8934

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Part Number NDS8934
Manufacturer Fairchild/ON Semiconductor
Description MOSFET 2P-CH 20V 3.8A 8-SOIC
Datasheet NDS8934 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 30,340 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 26 - Oct 1 (Choose Expedited Shipping)
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Part Number # NDS8934 (Transistors - FETs, MOSFETs - Arrays) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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NDS8934 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet NDS8934Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.8A
Rds On (Max) @ Id, Vgs70 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 10V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

NDS8934 Datasheet

Page 1

Page 2

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features _________________________________________________________________________________ Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter NDS8934 Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous (Note 1a) -3.8 A - Pulsed -15 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W NDS8934.SAM These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. -3.8A, -20V. RDS(ON) = 0.07Ω @ VGS = -4.5V RDS(ON) = 0.1Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. 1 5 6 7 8 4 3 2 © 1997 Fairchild Semiconductor Corporation

Page 3

Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA VDS = -10 V, VGS = 0 V, TJ = 70°C -5 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.5 -0.7 -1 V TJ = 125°C -0.3 -0.5 -0.8 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -3.8 A 0.06 0.07 Ω TJ = 125°C 0.085 0.14 VGS = -2.7 V, ID = -3.2 A 0.082 0.1 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -15 A VGS = -2.7 V, VDS = -5 V -5 gFS Forward Transconductance VDS = 10 V, ID = -3.8 A 9 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1120 pF Coss Output Capacitance 470 pF Crss Reverse Transfer Capacitance 145 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6 Ω 13 20 ns tr Turn - On Rise Time 53 70 ns tD(off) Turn - Off Delay Time 60 80 ns tf Turn - Off Fall Time 33 40 ns Qg Total Gate Charge VDS = -10 V, ID = -3.8 A, VGS = -4.5 V 19 30 nC Qgs Gate-Source Charge 2.4 nC Qgd Gate-Drain Charge 5.5 nC NDS8934.SAM

Page 4

Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.75 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t) = TJ−TA RθJ A(t) = TJ−TA RθJ C+RθCA(t) = I D2 (t) × RDS (ON ) TJ Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper. b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper. c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.. NDS8934.SAM 1a 1b 1c

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NDS8934.SAM -4-3-2-10 -20 -16 -12 -8 -4 0 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN -S O U R C E C U R R E N T (A ) V = -4.5V GS DS D -3.5 -1.5 -3.0 -2.5 -2.0 -2.7 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS TA N C E J V = -4.5VGS I = -3.8AD R , N O R M A LI ZE D D S (O N ) -50 -25 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1 1.1 1.2 T , JUNCTION TEMPERATURE (°C) G A TE -S O U R C E T H R E S H O LD V O LT A G E I = -250µAD V = VDS GS J V , N O R M A LI ZE D th -20-16-12-8-40 0.8 1 1.2 1.4 1.6 1.8 2 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E D R , N O R M A LI ZE D D S (o n) V = -2.5VGS -3.0 -5.0 -3.5 -4.0 -2.7 -4.5 -20-16-12-8-40 0.5 1 1.5 2 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E T = 125°CJ 25°C -55°C D V = -4.5V GS R , N O R M A LI ZE D D S (o n) Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. -4-3.5-3-2.5-2-1.5-1-0.50 -20 -16 -12 -8 -4 0 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) V = -10VDS GS D T = -55°CJ 25°C 125°C

Page 6

NDS8934.SAM -50 -25 0 25 50 75 100 125 150 0.94 0.96 0.98 1 1.02 1.04 1.06 1.08 1.1 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E B R E A K D O W N V O LT A G E I = -250µAD B V , N O R M A LI ZE D D S S J 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.0001 0.001 0.01 0.1 1 2 10 20 -V , BODY DIODE FORWARD VOLTAGE (V) -I , R E V E R S E D R A IN C U R R E N T (A ) T = 125°CJ 25°C -55°C V = 0VGS SD S 0 5 10 15 20 25 0 1 2 3 4 5 Q , GATE CHARGE (nC) -V , G A TE -S O U R C E V O LT A G E (V ) g G S I = -3.8AD V = -5.0VDS -10V -15V 0.1 0.2 0.5 1 2 3 5 10 20 100 200 400 600 800 1000 1500 2000 -V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E (p F) DS C iss f = 1 MHz V = 0VGS C oss C rss Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Typical Electrical Characteristics -20-16-12-8-40 0 5 10 15 20 I , DRAIN CURRENT (A) g , T R A N S C O N D U C TA N C E (S IE M E N S ) T = -55°CJ 25°C 125°C D FS V = -10VDS Figure 11. Transconductance Variation with Drain Current and Temperature.

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NDS8934.SAM 0 0.1 0.2 0.3 0.4 0.5 2 2.5 3 3.5 4 4.5 2oz COPPER MOUNTING PAD AREA (in ) -I , S TE A D Y -S TA TE D R A IN C U R R E N T (A ) 2 1c 1 b 1a 4.5"x5" FR-4 Board T = 25 C Sti l l Air V = -4.5V A o GS D Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 0.1 0.2 0.5 1 2 5 10 20 30 0.01 0.03 0.1 0.3 1 3 10 30 - V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN C U R R E N T (A ) DS D RD S(O N) LIM IT 100ms 10s DC 10ms 1ms 1s 100us V = -4.5V SINGLE PULSE R = See Note 1c T = 25°C GS A θJA Figure 14. Maximum Safe Operating Area. Typical Thermal Characteristics 0 0.2 0.4 0.6 0.8 1 0.5 1 1.5 2 2.5 2oz COPPER MOUNTING PAD AREA (in ) S TE A D Y -S TA TE P O W E R D IS S IP A TI O N (W ) 2 1c 1 b 4.5"x5" FR-4 Board T = 25 C Sti l l Air A o Power for Single Operation Total Power for Dual Operation 1a Figure 12. SO-8 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 0 .0001 0 .001 0 .01 0 .1 1 10 100 300 0 .001 0 .002 0 .005 0 .01 0 .02 0 .05 0 .1 0 .2 0 .5 1 t , TIME (sec) TR A N S IE N T TH E R M A L R E S IS TA N C E r( t), N O R M A LI ZE D E FF E C TI V E 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t1 2 R (t) = r(t) * R R = See Note 1c θJAθJA θJA T - T = P * R (t)θJAAJ P(pk) t 1 t 2 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.

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July 30, 2020

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July 26, 2020

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July 5, 2020

Work Great. Would recommend. Only used 2. So I have 248 extras. Best deal by far that's why I got these.

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