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NTTFS4985NFTWG

NTTFS4985NFTWG

NTTFS4985NFTWG

For Reference Only

Part Number NTTFS4985NFTWG
Manufacturer ON Semiconductor
Description MOSFET N-CH 30V 64A U8FL
Datasheet NTTFS4985NFTWG Datasheet
Package 8-PowerWDFN
In Stock 380 piece(s)
Unit Price $ 0.5801 *
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NTTFS4985NFTWG

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NTTFS4985NFTWG Specifications

ManufacturerON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet NTTFS4985NFTWG Datasheet
Package8-PowerWDFN
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C16.3A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2075pF @ 15V
Vgs (Max)��20V
Power Dissipation (Max)1.47W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs3.5 mOhm @ 20A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

NTTFS4985NFTWG Datasheet

Page 1

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© Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 1 1 Publication Order Number: NTTFS4985NF/D NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RJA (Note 1) Steady State TA = 25°C ID 22 A TA = 85°C 15.9 Power Dissipation RJA (Note 1) TA = 25°C PD 2.69 W Continuous Drain Current RJA ≤ 10 s (Note 1) TA = 25°C ID 32.4 A TA = 85°C 23.4 Power Dissipation RJA ≤ 10 s (Note 1) TA = 25°C PD 5.85 W Continuous Drain Current RJA (Note 2) TA = 25°C ID 16.3 A TA = 85°C 11.7 Power Dissipation RJA (Note 2) TA = 25°C PD 1.47 W Continuous Drain Current RJC (Note 1) TC = 25°C ID 64 A TC = 85°C 46 Power Dissipation RJC (Note 1) TC = 25°C PD 22.73 W Pulsed Drain Current TA = 25°C, tp = 10 s IDM 192 A Operating Junction and Storage Temperature TJ, Tstg −55 to +150 °C Source Current (Body Diode) IS 32 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 32 Apk, L = 0.1 mH, RG = 25 ) EAS 52 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2. ORDERING INFORMATION http://onsemi.com Device Package Shipping† V(BR)DSS RDS(on) MAX ID MAX 30 V 3.5 m @ 10 V 64 A N−Channel MOSFET D S G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. WDFN8 (8FL) CASE 511AB MARKING DIAGRAM 5.2 m @ 4.5 V NTTFS4985NFTAG WDFN8 (Pb−Free) 1500 / Tape & Reel (Note: Microdot may be in either location) 1 4985 = Specific Device Code A = Assembly Location Y = Year WW = Work Week  = Pb−Free Package 1 NTTFS4985NFTWG WDFN8 (Pb−Free) 5000 / Tape & Reel 4985 AYWW  D D D D S S S G

Page 3

NTTFS4985NF http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RJC 5.5 °C/W Junction−to−Ambient – Steady State (Note 3) RJA 46.4 Junction−to−Ambient – Steady State (Note 4) RJA 84.8 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RJA 21.4 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 15 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 500 A Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 A 1.2 1.6 2.3 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.2 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 20 A 2.8 3.5 m ID = 10 A 2.8 VGS = 4.5 V ID = 20 A 4.16 5.2 ID = 10 A 4.13 Forward Transconductance gFS VDS = 1.5 V, ID = 10 A 34 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 15 V 2075 pF Output Capacitance Coss 876 Reverse Transfer Capacitance Crss 46 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 20 A 13.6 nC Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS 5.8 Gate−to−Drain Charge QGD 4.1 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 20 A 29.4 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(on) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0  11 ns Rise Time tr 24 Turn−Off Delay Time td(off) 20 Fall Time tf 5.4 Turn−On Delay Time td(on) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0  8.5 ns Rise Time tr 24 Turn−Off Delay Time td(off) 25 Fall Time tf 4.0 5. Pulse Test: pulse width = 300 s, duty cycle  2%. 6. Switching characteristics are independent of operating junction temperatures.

Page 4

NTTFS4985NF http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter UnitMaxTypMinTest ConditionSymbol DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2 A TJ = 25°C 0.4 0.7 V TJ = 125°C 0.33 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/s, IS = 2 A 35.7 ns Charge Time ta 18.2 Discharge Time tb 17.5 Reverse Recovery Charge QRR 32 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 0.65 nH Drain Inductance LD 0.20 Gate Inductance LG 1.5 Gate Resistance RG 1.0  5. Pulse Test: pulse width = 300 s, duty cycle  2%. 6. Switching characteristics are independent of operating junction temperatures.

Page 5

NTTFS4985NF http://onsemi.com 4 TYPICAL PERFORMANCE CURVES 0 15 30 45 60 75 90 105 120 135 150 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) I D , D R A IN C U R R E N T ( A ) Figure 1. On−Region Characteristics VGS = 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 2.4 V 4.0 V 4.2 V 4.4 V to 4.5 V 7.5 V to 10 V 0 10 20 30 40 50 60 70 80 90 100 110 1 1.5 2 2.5 3 3.5 4 VGS, GATE−TO−SOURCE VOLTAGE (V) I D , D R A IN C U R R E N T ( A ) Figure 2. Transfer Characteristics VDS = 5 V TJ = 25°C TJ = −55°C TJ = 125°C 0 0.005 0.010 0.015 0.020 0.025 0.030 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 Figure 3. On−Resistance vs. Gate−to−Source Voltage VGS, GATE−TO−SOURCE VOLTAGE (V) R D S (o n) , D R A IN − T O − S O U R C E R E S IS TA N C E (  ) ID = 30 A TJ = 25°C 2.25E−03 2.50E−03 2.75E−03 3.00E−03 3.25E−03 3.50E−03 3.75E−03 4.00E−03 4.25E−03 4.50E−03 4.75E−03 5.00E−03 5.25E−03 5.50E−03 5 20 35 50 65 80 95 110 125 140 155 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID, DRAIN CURRENT (A) R D S (o n) , D R A IN − T O − S O U R C E R E S IS TA N C E (  ) VGS = 4.5 V VGS = 10 V TJ = 25°C 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 −50 −25 0 25 50 75 100 125 150 Figure 5. On−Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) R D S (o n) , D R A IN − T O − S O U R C E R E S IS TA N C E ( N O R M A LI Z E D ) ID = 20 A VGS = 10 V Figure 6. Drain−to−Source Leakage Current vs. Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) I D S S , L E A K A G E ( A ) VGS = 0 V TJ = 150°C TJ = 125°C TJ = 25°C 1.00E−01 1.00E−02 1.00E−03 1.00E−04 1.00E−05 0 5 252010 15

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NTTFS4985NF http://onsemi.com 5 TYPICAL PERFORMANCE CURVES 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) C , C A P A C IT A N C E ( pF ) Figure 7. Capacitance Variation Coss Crss Ciss VGS = 0 V TJ = 25°C 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 ID = 30 A TJ = 25°C VDD = 15 V VGS = 10 V QT Qgs Qgd Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge QG, TOTAL GATE CHARGE (nC) V G S , G A T E − TO − S O U R C E V O LT A G E (V ) 1 10 100 1000 1 10 100 RG, GATE RESISTANCE () t, T IM E ( ns ) VDD = 15 V ID = 10 A VGS = 10 V td(off) td(on) tf tr Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0 1 2 3 4 5 6 7 8 9 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C Figure 10. Diode Forward Voltage vs. Current I S , S O U R C E C U R R E N T ( A ) 0.01 0.1 1 10 100 1000 0.1 1 10 100 VGS = 20 V Single Pulse TC = 25°C Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 s 100 s 1 ms 10 ms dcI D , D R A IN C U R R E N T ( A ) 0 5 10 15 20 25 30 35 40 45 50 55 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) ID = 32 A Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature E A S , S IN G LE P U LS E D R A IN − T O − S O U R C E A V A LA N C H E E N E R G Y ( m J)

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NTTFS4985NF http://onsemi.com 6 TYPICAL PERFORMANCE CURVES 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 0.2 0.02 D = 0.5 0.05 0.01 SINGLE PULSE r( t) (° C /W ) PULSE TIME (s) Figure 13. Thermal Response

NTTFS4985NFTWG Reviews

Average User Rating
5 / 5 (79)
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Lilli*****Villa

December 5, 2019

It fit exactly in the same location as the original. Works great and no problem. Good purchase.

Ange***** Eaton

November 20, 2019

Excellent service over extended period of time. Incredibly fast shipping, never any errors. Couldn't be more pleased.

West*****aker

November 10, 2019

I can count on your provision for BOM of my design in near future

Abig*****Hardin

November 5, 2019

Super easy to replace and labelled terminals made it a quick replacement.

Rav*****Singh

October 12, 2019

They worked great. Not much to say - as far as I can tell they adhere to the specs, and did the job I needed them to. Good transistors for higher current situations.

Leil*****Doshi

August 14, 2019

I can find what I want, and also trust I'm getting what I paid for. Many times I had to send things back or eat the cost dealing shady sellers, either way it cost me.

Fern***** Barr

August 9, 2019

What can I say, great value for the money. I only needed 2 but now I have some spares for future projects. They got the job done, nothing more I can say.

Ayde*****atti

August 6, 2019

Great seller, would recommend buying from. , good communication and problem solving

Jaliy*****nnett

August 4, 2019

Fantastic transaction, very fast delivery. Highly recommended. Thank you.

Finle*****jillo

August 2, 2019

Thanks a lot! Ease of ordering and I love when they upgrade my shipping for free. What a nice thing to do.

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