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P6SMB62CA

hot P6SMB62CA

P6SMB62CA

For Reference Only

Part Number P6SMB62CA
Manufacturer Bourns Inc.
Description TVS DIODE 53VWM 85VC DO214AA
Datasheet P6SMB62CA Datasheet
Package DO-214AA, SMB
In Stock 60000 piece(s)
Unit Price $ 0.1213 *
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P6SMB62CA

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P6SMB62CA Specifications

ManufacturerBourns Inc.
CategoryCircuit Protection - TVS - Diodes
Datasheet P6SMB62CA Datasheet
PackageDO-214AA, SMB
Series-
TypeZener
Bidirectional Channels1
Voltage - Reverse Standoff (Typ)53V
Voltage - Breakdown (Min)58.9V
Voltage - Clamping (Max) @ Ipp85V
Current - Peak Pulse (10/1000��s)7.2A
Power - Peak Pulse600W
Power Line ProtectionNo
ApplicationsGeneral Purpose
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)

P6SMB62CA Datasheet

Page 1

Page 2

Features n RoHS compliant* and halogen free** n Surface Mount SMB package n Breakdown Voltage: 6.8 to 550 volts n Peak Pulse Power: 600 watts n Typical temperature coefficient: ∆VBR = 0.1 % x VBR @ 25 °C x ∆T Applications n IEC 61000-4-2 ESD (Min. Level 4) n IEC 61000-4-4 EFT n IEC 61000-4-5 Surge Maximum Characteristics (@ TA = 25 °C Unless Otherwise Noted) P6SMB Transient Voltage Suppressor Diode Series * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Parameter Symbol Value Unit Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) PPK 600 Watts Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 100 Amps Maximum Instantaneous Forward Voltage @ IPP = 50 A (For Unidirectional Units Only) P6SMB6.8A ~ P6SMB200A P6SMB220A ~ P6SMB550A VF 3.5 5.0 Volts Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C 1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. 2. Thermal Resistance Junction to Lead. 3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB) size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. *R oH S C OM PL IAN T LE AD FR EE *R oH S C OM PL IAN T VE RS IO NS AV AIL AB LE LE AD FR EE VE RS IO NS AR E Ro HS CO MP LIA NT * How to Order P6SMB 6.8 CA - H Series P6SMB= SMB/DO-214AA Breakdown Voltage 6.8 to 550 = 6.8 to 550 VBD (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device Reel (blank) = 13 inch reel -H = 7 inch reel Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com Europe: Tel: +36 88 520 390 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com

Page 3

Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P6SMB Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Notes: 1. Suffix ‘A’ denotes a 5 % tolerance unidirectional device. 2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device. 3. For bidirectional devices with a VR of 10 volts or less, the IR limit is double. Unidirectional Device Bidirectional Device Breakdown Voltage VBR (Volts) Working Peak Reverse Voltage Maximum Reverse Leakage @ VRWM Maximum Reverse Voltage @ IRSM Maximum Reverse Surge Current Part No. Marking Part No. Marking Min. Max. @ IT (mA) VRWM (V) IR (μA) VRSM (V) IRSM (A) P6SMB6.8A 6V8A P6SMB6.8CA 6V8C 6.45 7.14 10 5.8 1000 10.5 58.1 P6SMB7.5A 7V5A P6SMB7.5CA 7V5C 7.13 7.88 10 6.4 500 11.3 54 P6SMB8.2A 8V2A P6SMB8.2CA 8V2C 7.79 8.61 10 7.02 200 12.1 50.4 P6SMB9.1A 9V1A P6SMB9.1CA 9V1C 8.65 9.55 1 7.78 50 13.4 45.5 P6SMB10A 10A P6SMB10CA 10C 9.5 10.5 1 8.55 10 14.5 42.1 P6SMB11A 11A P6SMB11CA 11C 10.5 11.6 1 9.4 5 15.6 39.1 P6SMB12A 12A P6SMB12CA 12C 11.4 12.6 1 10.2 5 16.7 36.5 P6SMB13A 13A P6SMB13CA 13C 12.4 13.7 1 11.1 1 18.2 33.5 P6SMB15A 15A P6SMB15CA 15C 14.3 15.8 1 12.8 1 21.2 28.8 P6SMB16A 16A P6SMB16CA 16C 15.2 16.8 1 13.6 1 22.5 27.1 P6SMB18A 18A P6SMB18CA 18C 17.1 18.9 1 15.3 1 25.5 24.2 P6SMB20A 20A P6SMB20CA 20C 19 21 1 17.1 1 27.7 22 P6SMB22A 22A P6SMB22CA 22C 20.9 23.1 1 18.8 1 30.6 19.9 P6SMB24A 24A P6SMB24CA 24C 22.8 25.2 1 20.5 1 33.2 18.4 P6SMB27A 27A P6SMB27CA 27C 25.7 28.4 1 23.1 1 37.5 16.3 P6SMB30A 30A P6SMB30CA 30C 28.5 31.5 1 25.6 1 41.4 14.7 P6SMB33A 33A P6SMB33CA 33C 31.4 34.7 1 28.2 1 45.7 13.3 P6SMB36A 36A P6SMB36CA 36C 34.2 37.8 1 30.8 1 49.9 12.2 P6SMB39A 39A P6SMB39CA 39C 37.1 41 1 33.3 1 53.9 11.3 P6SMB43A 43A P6SMB43CA 43C 40.9 45.2 1 36.8 1 59.3 10.3 P6SMB47A 47A P6SMB47CA 47C 44.7 49.4 1 40.2 1 64.8 9.4 P6SMB51A 51A P6SMB51CA 51C 48.5 53.6 1 43.6 1 70.1 8.7 P6SMB56A 56A P6SMB56CA 56C 53.2 58.8 1 47.8 1 77 7.9 P6SMB62A 62A P6SMB62CA 62C 58.9 65.1 1 53 1 85 7.2 P6SMB68A 68A P6SMB68CA 68C 64.6 71.4 1 58.1 1 92 6.6 P6SMB75A 75A P6SMB75CA 75C 71.3 78.8 1 64.1 1 103 5.9 P6SMB82A 82A P6SMB82CA 82C 77.9 86.1 1 70.1 1 113 5.4 P6SMB91A 91A P6SMB91CA 91C 86.5 95.5 1 77.8 1 125 4.9 P6SMB100A 100A P6SMB100CA 100C 95 105 1 85.5 1 137 4.5 P6SMB110A 110A P6SMB110CA 110C 105 116 1 94 1 152 4 P6SMB120A 120A P6SMB120CA 120C 114 126 1 102 1 165 3.7 P6SMB130A 130A P6SMB130CA 130C 124 137 1 111 1 179 3.4 P6SMB150A 150A P6SMB150CA 150C 143 158 1 128 1 207 2.9 P6SMB160A 160A P6SMB160CA 160C 152 168 1 136 1 219 2.8 P6SMB170A 170A P6SMB170CA 170C 162 179 1 145 1 234 2.6 P6SMB180A 180A P6SMB180CA 180C 171 189 1 154 1 246 2.5 P6SMB200A 200A P6SMB200CA 200C 190 210 1 171 1 274 2.2 P6SMB220A 220A P6SMB220CA 220C 209 231 1 185 1 328 1.9 P6SMB250A 250A P6SMB250CA 250C 237 263 1 214 1 344 1.8 P6SMB300A 300A P6SMB300CA 300C 285 315 1 256 1 414 1.5 P6SMB350A 350A P6SMB350CA 350C 332 368 1 300 1 482 1.3 P6SMB400A 400A P6SMB400CA 400C 380 420 1 342 1 548 1.1 P6SMB440A 440A P6SMB440CA 440C 418 462 1 376 1 602 1 P6SMB480A 480A P6SMB480CA 480C 456 504 1 408 1 658 0.9 P6SMB510A 510A P6SMB510CA 510C 485 535 1 434 1 698 0.9 P6SMB530A 530A P6SMB530CA 530C 503.5 556.5 1 477 1 725 0.8 P6SMB540A 540A P6SMB540CA 540C 513 567 1 486 1 740 0.8 P6SMB550A 550A P6SMB550CA 550C 522.5 577.5 1 495 1 760 0.8

Page 4

3312 - 2 mm SMD Trimming PotentiometerP6SMB Transient Voltage Suppressor Diode Series Rating & Characteristic Curves Pulse Derating Curve Maximum Non-Repetitive Surge Current Pulse Waveform Typical Junction Capacitance Pulse Rating Curve Steady State Power Derating Curve 100 75 50 25 0 0 5025 75 100 150125 175 200 Ambient Temperature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 5025 75 100 150125 175 200 TL, Lead Temperature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 Hz Resistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Time (ms) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP TR=10 µs Half value= IRSM 2 Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width P P , P ea k Po w er (K W ) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 1 10 100 1000 10000 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 75 50 25 0 0 5025 75 100 150125 175 200 Ambient Temperature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 5025 75 100 150125 175 200 TL, Lead Temperature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 Hz Resistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Time (ms) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP TR=10 µs Half value= IRSM 2 Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width P P , P ea k Po w er (K W ) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 1 10 100 1000 10000 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V B - Reverse Breakdown Voltage (V) 100 75 50 25 0 0 5025 75 100 150125 175 200 Ambient Temperature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 5025 75 100 150125 175 200 TL, Lead Temperature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 Hz Resistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Time (ms) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP TR=10 µs H f value= IRSM 2 Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width P P , P ea k Po w er (K W ) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 1 10 100 1000 10000 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 75 50 25 0 0 5025 75 00 5025 175 200 Ambient Temperature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 502 75 100 15012 175 200 TL, Lead Temperature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 Hz Resistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Time (ms) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP TR=10 µs Half value= IRSM 2 P ak value (IRSM) Pulse width (TP) is defined as that point where the p ak current decays t 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width P P , P ea k Po w er (K W ) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Puls Waveform Graph 1 10 100 1000 10000 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 75 50 25 0 0 5025 75 100 150125 175 200 Ambient Temperature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 5025 75 100 150125 175 200 TL, Lead Temperature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 Hz Resistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Time (ms) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP TR=10 µs Half value= IRSM 2 Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 100 wavef rm as defined by R.E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width P P , P ea k Po w er (K W ) 100 µs 1.0 ms TA = 25 °C Non-repetitiv Pulse Waveform Shown in Puls Waveform Graph 1 10 1 0 1 0 1 0 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectio al V = 0 V Bidirectional @VR Unidirectio al @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Br akdown Voltage (V) 100 75 50 25 0 0 5025 75 100 5025 175 200 A bient Te perature ( Pe ak P ul se D er at in g in P er ce nt o f Pe ak P ow er o r C ur re nt °C) 5.0 3.0 4.0 2.0 1.0 0.0 0 502 75 100 15012 175 200 TL, Lead Te perature (°C) R M (A V) S te ad y St at e Po w er D is si pa tio n (W ) 60 z esistive or Inductive Load 100 50 0 0 1.0 2.0 3.0 4.0 T, Ti e ( s) I P , P ea k Pu ls e Cu rr en t ( % ) TA=25 °C TP T =10 µs alf value= I S 2 Peak value (I S ) Pulse idth (TP) is defined as that point h re the peak current dec ys t 50 f IPS . 1 x 1000 avefor as defined by .E.A. Pe ak F or w ar d Su rg e Cu rr en t ( Am ps ) 120 80 100 60 40 20 0 1 2 5 10 20 50 100 u ber of Cycles at 60 z Pulse idth 8.3 s Single alf Sine- ave 100 10 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 s TP, Pulse idth P P , P ea k Po w er (K W ) 100 µs 1.0 s TA = 25 °C on-repetitive Pulse avefor Sho n in Pulse avefor raph 10 100 1000 10000 101 100 1000 C J - J un ct io n C ap ac ita nc e (p F) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional VR Unidirectional VR T = 25 ° C f = 1.0 Hz Vsig = 50 Vp-p V B - everse Breakdo n Voltage (V) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

Page 5

3312 - 2 mm SMD Trimming Potentiometer Product Dimensions Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P6SMB Transient Voltage Suppress r Diode Series Recommended Footprint Physical Specifications Case ...........................................Molded plastic per UL Class 94V-0 Polarity....................... Cathode band indicates unidirectional device No cathode band indicates bidirectional device DIMENSIONS: MM (INCHES) a c B F E C b MM (INCHES) DIMENSIONS: G D ACATHODE BAND (FOR UNIDIRECTIONAL PRODUCTS ONLY) Dimension SMB (DO-214AA) A 4.06 - 4.57 (0.160 - 0.180) B 3.30 - 3.94 (0.130 - 0.155) C 1.95 - 2.20 (0.077 - 0.087) D 5.21 - 5.59 (0.205 - 0.220) E 0.05 - 0.203 (0.002 - 0.008) F 2.13 - 2.44 (0.080 - 0.103) G 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) Dimension SMB (DO-214AA) a (Max.) 2.69 (0.106) b (Min.) 2.10 (0.083) c (Min.) 1.27 (0.050) Environmental Specifications Moisture Sensitivity Level ................................................................1 ESD Classification (HBM)............................................................. 3B A A C C F E B B D MM (INCHES) DIMENSIONS:

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