Part Number | PB5006-E3/45 |
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Manufacturer | Vishay Semiconductor Diodes Division |
Description | RECT BRIDGE 600V 45A PWR BRIDGE |
Datasheet | PB5006-E3/45 Datasheet |
Package | 4-SIP, PB |
In Stock | 14,332 piece(s) |
Unit Price | $ 3.5800 * |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Jan 21 - Jan 26 (Choose Expedited Shipping) |
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Part Number # PB5006-E3/45 (Diodes - Bridge Rectifiers) is manufactured by Vishay Semiconductor Diodes Division and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
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Manufacturer | Vishay Semiconductor Diodes Division |
Category | Discrete Semiconductor Products - Diodes - Bridge Rectifiers |
Datasheet | PB5006-E3/45Datasheet |
Package | 4-SIP, PB |
Series | isoCink+? |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 600V |
Current - Average Rectified (Io) | 45A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 22.5A |
Current - Reverse Leakage @ Vr | 10µA @ 600V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-SIP, PB |
Supplier Device Package | isoCINK+? PB |
PB5006, PB5008, PB5010 www.vishay.com Vishay General Semiconductor Revision: 30-Jul-2018 1 Document Number: 84809 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Enhanced isoCink+TM Bridge Rectifiers *Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. FEATURES • UL recognition file number E312394 (QQQX2) UL 1557 (see *) • Enhanced high-current density single in-line package • Superior thermal conductivity • Glass passivated chip junction • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: PB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) Notes (1) With heatsink (2) Without heatsink, free air PRIMARY CHARACTERISTICS Package PB IF(AV) 45 A VRRM 600 V, 800 V, 1000 V IFSM 450 A IR 10 μA VF at IF = 22.5 A 0.90 V TJ max. 150 °C Circuit configuration In-line + ~ ~ - - ~ ~ + isoCink+™ Case Style PB + ~ ~ - MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL PB5006 PB5008 PB5010 UNIT Maximum repetitive peak reverse voltage VRRM 600 800 1000 V Average rectified forward current (Fig. 1, 2) TC = 84 °C (1) IO 45 A TA = 25 °C (2) 4.5 Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C IFSM 450 A Rating for fusing (t < 8.3 ms) TJ = 25 °C I 2t 840 A2s Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
PB5006, PB5008, PB5010 www.vishay.com Vishay General Semiconductor Revision: 30-Jul-2018 2 Document Number: 84809 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 22.5 A TA = 25 °C VF 1.00 1.10 V TA = 125 °C 0.90 1.00 Reverse current per diode (2) rated VR TA = 25 °C IR - 10 μA TA = 125 °C 170 500 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 162 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL PB5006 PB5008 PB5010 UNIT Typical thermal resistance RJC (1) 0.7 °C/W RJA (2) 18 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE PB5006-E3/45 7.62 45 20 Tube
PB5006, PB5008, PB5010 www.vishay.com Vishay General Semiconductor Revision: 30-Jul-2018 3 Document Number: 84809 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve Fig. 3 - Forward Power Dissipation Fig. 4 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode 0 40 80 160 0 5 15 20 25 50 Case Temperature (°C) A v e ra g e F o rw a rd O u tp u t C u rr e n t (A ) 10 20 60 120 With Heatsink Sine-Wave, R-Load 100 140 30 45 40 35 TC TC TC Measured at Device Bottom 0 1 2 3 5 Ambient Temperature (°C) A v e ra g e F o rw a rd R e c ti fi e d C u rr e n t (A ) 0 5025 75 100 125 150 4 Without Heatsink Sine-Wave, R-Load Free Air, TA 0 5 10 15 20 25 55 0 40 Average Forward Current (A) F o rw a rd P o w e r D is s ip a ti o n ( W ) 20 100 80 60 403530 120 5045 0.4 1.2 10 0.1 1 100 0.6 0.8 1.0 Instantaneous Forward Voltage (V) In s ta n ta n e o u s F o rw a rd C u rr e n t (A ) TA = 150 °C TA = 125 °C TA = 25 °C 1.10.5 0.7 0.9 TA = 100 °C TA = 85 °C 1000 2010 604030 50 70 90 10080 0.01 1 10 100 Percent of Rated Peak Reverse Voltage (%) In s ta n ta n e o u s R e v e rs e C u rr e n t (µ A ) TA = 150 °C TA = 125 °C TA = 25 °C0.1 TA = 100 °C TA = 85 °C 0.1 1 10 100 10 1000 Reverse Voltage (V) J u n c ti o n C a p a c it a n c e ( p F ) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
PB5006, PB5008, PB5010 www.vishay.com Vishay General Semiconductor Revision: 30-Jul-2018 4 Document Number: 84809 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type PB 0.066 (1.68) REF. 0.214 (5.44) REF. 0.633 (16.07) REF. 0.088 (2.24) REF. 1.041 (26.44) REF. 0.070 (1.78) REF. 0.161 (4.1) 0.138 (3.5) 0.201 (5.1) 0.177 (4.5) 0.134 (3.4) 0.118 (3.0) 0.145 (3.7) 0.130 (3.3) 0.032 (0.80) 0.024 (0.60) 0.118 (3.0) 0.102 (2.6) 5° TYP. 5° TYP. 120° TYP. Back Side View Side ViewFront Side View 1.193 (30.3) 1.169 (29.7) 0.799 (20.3) 0.776 (19.7) 0.205 (5.20) 0.189 (4.80) 0.708 (18.0) 0.669 (17.0) 0.165 (4.20) 0.150 (3.80) 0.303 (7.70) 0.287 (7.30)0.303 (7.70) 0.287 (7.30) 0.402 (10.2) 0.386 (9.80) 0.043 (1.10) 0.035 (0.90) 0.094 (2.40) 0.079 (2.00) 0.106 (2.70) 0.091 (2.30) 0.441 (11.2) 0.425 (10.8) 0.118 (3.0) x 45° CHAMFER
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